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    Mechanism of generating a sound radar image in a video game device
    22.
    发明授权
    Mechanism of generating a sound radar image in a video game device 有权
    在视频游戏设备中生成声音雷达图像的机制

    公开(公告)号：US07850525B2

    公开(公告)日：2010-12-14

    申请号：US11596001

    申请日：2005-03-10

    申请人： Toru Shimizu ,  Takao Hirabayashi

    发明人： Toru Shimizu ,  Takao Hirabayashi

    IPC分类号： A63F9/24

    CPC分类号： A63F13/5378 ,  A63F13/10 ,  A63F13/52 ,  A63F13/822 ,  A63F2300/64

    摘要： An aspect of the present invention includes processes for detecting an event input, inputted as an operation signal, and determining sound characteristic information and sound effects corresponding to the event input, obtaining a first sound source position coordinates information in which a location where an event occurred in a virtual space is taken, determining a propagation mode of a sound to be produced corresponding to the event input in the virtual space based on sound characteristics information and the first sound source position coordinates information, determining a second sound source position coordinates information indicating a position of a sound source on the radar image based on the first sound source position coordinates information, and displaying a sound wave image indicating a propagation mode of the sound effect on the radar image based on the propagation mode of the sound and the second sound source position coordinates information.

    摘要翻译： 本发明的一个方面包括用于检测作为操作信号输入的事件输入和确定与事件输入相对应的声音特征信息和声音效果的处理，获得发生事件的位置的第一声源位置坐标信息 在虚拟空间中，基于声音特性信息和第一声源位置坐标信息确定与虚拟空间中输入的事件相对应的要产生的声音的传播模式，确定表示第一声源位置坐标信息的第二声源位置坐标信息 基于第一声源位置坐标信息在雷达图像上的声源的位置，并且基于声音和第二声源的传播模式，将指示声音效果的传播模式的声波图像显示在雷达图像上 位置坐标信息。

    INKJET RECORDING APPARATUS, TEST IMAGE FORMING METHOD, AND COMPUTER-READABLE MEDIUM
    23.
    发明申请
    INKJET RECORDING APPARATUS, TEST IMAGE FORMING METHOD, AND COMPUTER-READABLE MEDIUM 有权
    喷墨记录装置，测试图像形成方法和计算机可读介质

    公开(公告)号：US20090244167A1

    公开(公告)日：2009-10-01

    申请号：US12414139

    申请日：2009-03-30

    申请人： Hirofumi SAITA ,  Toru Shimizu

    发明人： Hirofumi SAITA ,  Toru Shimizu

    IPC分类号： B41J29/393

    CPC分类号： B41J2/1721 ,  B41J2/145 ,  B41J2/175 ,  B41J2/185 ,  B41J2/2146 ,  B41J29/38

    摘要： An inkjet recording apparatus has: a head having a plurality of nozzles which eject an ink onto a recording medium; a conveyance device which conveys the recording medium; a droplet ejection control device which controls ink ejection of the head; a test image forming device that forms a test image on the recording medium by causing the ink to be ejected from every n (where n is a natural number equal to 2 or higher) nozzles in an X direction perpendicular to a direction in which the recording medium is conveyed, and causing the ink to be ejected so as to form vertical lines forming n columns which shift by one nozzle in the X direction and each extend continuously in terms of a Y direction parallel to the direction in which the recording medium is conveyed; and a reading device which is provided on a conveyance path of the recording medium, reads in a test image on the recording medium and has an image reading structure covering a length corresponding to full width of the recording medium in a breadthways direction which is perpendicular to the direction in which the recording medium is conveyed, wherein in the test image, an arrangement pitch in the X direction of the vertical lines is equal to or exceeding a reading pitch in the X direction of the reading device, an arrangement pitch in the Y direction of the vertical lines is N times a reading pitch in the Y direction of the reading device (where N is a natural number), and an interval corresponding to variation in a conveyance of the recording medium is provided between the vertical lines in such a manner that a length in the Y direction of each of the vertical lines is less than the reading pitch in the Y direction of the reading device.

    摘要翻译： 喷墨记录装置具有：头部，其具有将墨水喷射到记录介质上的多个喷嘴; 输送记录介质的输送装置; 液滴喷射控制装置，其控制喷墨头的喷墨; 一种测试图像形成装置，其通过使墨水从垂直于记录方向的X方向从每个n（其中n为自然数等于2或更高的数量）喷射到记录介质上，形成测试图像; 介质被输送，并且使油墨喷射以形成形成n列的垂直线，该n列在X方向上移动一个喷嘴，并且每个在与记录介质被输送的方向平行的Y方向上连续延伸 ; 以及读取装置，其设置在记录介质的输送路径上，读取记录介质上的测试图像，并且具有覆盖与记录介质的全宽相对应的长度的图像读取结构，该图像读取结构沿垂直于 记录介质被传送的方向，其中在测试图像中，垂直线的X方向上的排列间距等于或超过读取装置的X方向上的读取间距，Y中的排列间距 垂直线的方向是读取装置的Y方向的读取间距的N倍（其中N是自然数），并且在这样的垂直线之间的垂直线之间设置与记录介质的输送的变化相对应的间隔 每个垂直线的Y方向上的长度小于读取装置的Y方向上的读取间距的方式。

    Method of coating aluminum and aluminum alloy substrates and coated articles
    25.
    发明授权
    Method of coating aluminum and aluminum alloy substrates and coated articles 有权
    涂覆铝和铝合金基材和涂层制品的方法

    公开(公告)号：US06679952B2

    公开(公告)日：2004-01-20

    申请号：US09974458

    申请日：2001-10-10

    申请人： Toru Shimizu ,  Takayuki Sato ,  Tatsuya Oguri ,  Keiji Maetsuji ,  Kazuo Nobe

    发明人： Toru Shimizu ,  Takayuki Sato ,  Tatsuya Oguri ,  Keiji Maetsuji ,  Kazuo Nobe

    IPC分类号： C23C2248

    CPC分类号： B05D7/51 ,  B05D2202/25 ,  C23C22/361

    摘要： A method of coating aluminum and aluminum alloy substrates not only imparts a corrosion resistance comparable or even superior to that afforded by chromate treatment but also improves the adhesion to the coating film, while the luster of aluminum is fully retained, notwithstanding the use of a chromium-free treating solution, resulting in an improved coated article with the coated surface having a metallic luster. The method comprises treating an aluminum or aluminum alloy substrate with an acidic solution containing sulfuric acid and 0.2 to 0.4 g/L of a ferric ion and having a pH value of 0.6 to 2.0, subjecting the same to chemical conversion treatment with an acidic coat-forming agent containing 0.01 to 0.125 g/L of a zirconium or titanium ion, 0.01 to 1.0 g/L of a phosphate ion, and 0.01 to 0.5 g/L of a fluoride ion and having a pH value of 1.5 to 4.0, followed by coating.

    摘要翻译： 铝和铝合金基材的涂覆方法不仅具有与铬酸盐处理相当或甚至优异的耐腐蚀性，而且还提高了对涂膜的粘附性，而铝的光泽被完全保留，尽管使用了铬 从而形成具有金属光泽的涂覆表面的改进的涂层制品。 该方法包括用含硫酸的酸性溶液和0.2〜0.4g / L的铁离子处理铝或铝合金基板，并且其pH值为0.6〜2.0，对其进行化学转化处理， 含有0.01〜0.125g / L的锆或钛离子，0.01〜1.0g / L磷酸根离子，0.01〜0.5g / L氟离子，pH值为1.5〜4.0的成膜剂， 涂层。

    Semiconductor device and manufacturing method thereof
    27.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US06306709B1

    公开(公告)日：2001-10-23

    申请号：US09270648

    申请日：1999-03-16

    申请人： Masanori Miyagi ,  Haruo Konishi ,  Kazuaki Kubo ,  Yoshikazu Kojima ,  Toru Shimizu ,  Yutaka Saitoh ,  Toru Machida ,  Tetsuya Kaneko

    发明人： Masanori Miyagi ,  Haruo Konishi ,  Kazuaki Kubo ,  Yoshikazu Kojima ,  Toru Shimizu ,  Yutaka Saitoh ,  Toru Machida ,  Tetsuya Kaneko

    IPC分类号： H01L21336

    CPC分类号： H01L29/78696 ,  H01L21/3226 ,  H01L21/823462 ,  H01L27/0705 ,  H01L29/1041 ,  H01L29/1045 ,  H01L29/66757

    摘要： In a MISFET, areas where a channel surface of a channel region is inverted by a first gate voltage and areas where the channel surface is inverted by a second gate voltage are provided in the channel region of the MISFET in plane as components thereof. The channel region 104 having a first impurity concentration determined by a surface concentration of a P-type semiconductor substrate and a channel region 105 having a second impurity concentration determined by doping an impurity to the region selected by a pattern 106 of a mask for doping impurity by ion implantation and others are provided in a channel region of an N-type MOSFET on the P-type semiconductor substrate. The channel region 104 having the first impurity concentration and the channel region 105 having the second impurity concentration are divided into a plurality of plane shapes. The channel region of the same MOSFET may be structured by the plurality of plane shapes having the plurality of impurity concentrations as described above and a threshold voltage of the MOSFET may be readily set to a desired value in response to a plane area ratio of the area having the first impurity concentration and the area having the second impurity concentration, allowing to realize a high performance semiconductor integrated circuit device at low cost.

    摘要翻译： 在MISFET中，在MISFET的沟道区域中设置沟道区域的沟道表面被第一栅极电压反转的区域和沟道表面由第二栅极电压反转的区域，作为其组成。 具有由P型半导体衬底的表面浓度确定的第一杂质浓度的通道区域104和通过掺杂杂质确定的第二杂质浓度的沟道区域105，所述沟道区域105由用于掺杂杂质的掩模的图案106选择的区域 通过离子注入等设置在P型半导体衬底上的N型MOSFET的沟道区中。 具有第一杂质浓度的沟道区域104和具有第二杂质浓度的沟道区域105被分成多个平面形状。 相同MOSFET的沟道区域可以由具有如上所述的多个杂质浓度的多个平面形状构成，并且可以根据区域的平面面积比容易地将MOSFET的阈值电压设置为期望值 具有第一杂质浓度和具有第二杂质浓度的面积，从而以低成本实现高性能半导体集成电路器件。