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213 条记录 (耗时 0.046 秒)

    METHODS FOR PREVENTING PLASMA UN-CONFINEMENT EVENTS IN A PLASMA PROCESSING CHAMBER
    21.
    发明申请
    METHODS FOR PREVENTING PLASMA UN-CONFINEMENT EVENTS IN A PLASMA PROCESSING CHAMBER 有权
    用于防止等离子体加工室中的等离子体装配事件的方法

    公开(公告)号：US20100251529A1

    公开(公告)日：2010-10-07

    申请号：US12820020

    申请日：2010-06-21

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： B23P6/00

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

    摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

    摘要翻译： 提供了一种用于配置等离子体处理室的方法，用于防止在限制的等离子体维持区域内的衬底处理期间发生等离子体非约束事件。 限定的等离子体维持区域由围绕电极的底部的一组限制环所限定。 该方法包括确定在处理期间在等离子体处理室中产生的等离子体的最坏情况德拜长度。 该方法还包括执行调节任何一对相邻约束环之间的间隙中的至少一个，并且添加至少一个附加限制环以确保任何一对相邻约束环之间的间隙小于最坏情况德拜长度。

    Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
    22.
    发明授权
    Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber 有权
    用于防止等离子体处理室中的等离子体非约束事件的方法和装置

    公开(公告)号：US07740736B2

    公开(公告)日：2010-06-22

    申请号：US11537515

    申请日：2006-09-29

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： C23F1/00 ,  H01L21/306 ,  B05B5/025 ,  B05C5/02 ,  C23C16/00

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

    摘要： Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

    摘要翻译： 用于显着减少和/或防止发生等离子体非约束事件的技术和装置，包括屏蔽设置在室部件之间的间隙和沿着具有电介质屏蔽结构的RF电流路径的一个或多个的屏蔽尖锐部件结构 电介质屏蔽结构，并保持相邻的等离子体约束环之间的间隙小于等离子体的最坏情况DeBye长度。

    Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
    23.
    发明授权
    Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses 有权
    用于半导体材料处理装置的具有低颗粒性能的喷头电极和喷头电极组件

    公开(公告)号：US08443756B2

    公开(公告)日：2013-05-21

    申请号：US13284297

    申请日：2011-10-28

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： C23C16/509 ,  C23C16/50 ,  C23C16/448 ,  C23F1/00 ,  H01L21/306 ,  H05H1/24 ,  H01L21/00 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C23C16/45565 ,  C23C16/4557 ,  C23C16/45574

    摘要： Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.

    摘要翻译： 公开了一种用于半导体材料处理装置的喷头电极。 喷头电极的实施例包括彼此结合的顶部和底部电极。 顶部电极包括一个或多个增压室。 底部电极包括等离子体暴露的底部表面和与气室流体连通的多个气体孔。 还公开了包括从顶板柔性地悬挂的喷头电极的喷头电极组件。 淋浴头电极组件可与温度控制元件流体连通，空间上与喷头电极分离，以控制喷头电极的温度。 还公开了在包括喷头电极组件的等离子体处理室中处理衬底的方法。

    SHOWERHEAD ELECTRODES AND SHOWERHEAD ELECTRODE ASSEMBLIES HAVING LOW-PARTICLE PERFORMANCE FOR SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES
    24.
    发明申请
    SHOWERHEAD ELECTRODES AND SHOWERHEAD ELECTRODE ASSEMBLIES HAVING LOW-PARTICLE PERFORMANCE FOR SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES 有权
    具有半导体材料加工设备的低颗粒性能的淋浴电极和淋浴电极组件

    公开(公告)号：US20120045902A1

    公开(公告)日：2012-02-23

    申请号：US13284297

    申请日：2011-10-28

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： C23F1/08 ,  H01L21/30 ,  H01L21/3065

    CPC分类号： C23C16/45565 ,  C23C16/4557 ,  C23C16/45574

    摘要： Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.

    摘要翻译： 公开了一种用于半导体材料处理装置的喷头电极。 喷头电极的实施例包括彼此结合的顶部和底部电极。 顶部电极包括一个或多个增压室。 底部电极包括等离子体暴露的底部表面和与气室流体连通的多个气体孔。 还公开了包括从顶板柔性地悬挂的喷头电极的喷头电极组件。 淋浴头电极组件可与温度控制元件流体连通，空间上与喷头电极分离，以控制喷头电极的温度。 还公开了在包括喷头电极组件的等离子体处理室中处理衬底的方法。

    METHODS AND APPARATUS FOR PREVENTING PLASMA UN-CONFINEMENT EVENTS IN A PLASMA PROCESSING CHAMBER
    25.
    发明申请
    METHODS AND APPARATUS FOR PREVENTING PLASMA UN-CONFINEMENT EVENTS IN A PLASMA PROCESSING CHAMBER 有权
    用于防止等离子体加工室中等离子体排放事件的方法和装置

    公开(公告)号：US20070284045A1

    公开(公告)日：2007-12-13

    申请号：US11537515

    申请日：2006-09-29

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

    摘要： Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

    摘要翻译： 用于显着减少和/或防止发生等离子体非约束事件的技术和装置，包括屏蔽设置在室部件之间的间隙和沿着具有电介质屏蔽结构的RF电流路径的一个或多个的屏蔽尖锐部件结构 电介质屏蔽结构，并保持相邻的等离子体约束环之间的间隙小于等离子体的最坏情况DeBye长度。

    Combined wafer area pressure control and plasma confinement assembly
    28.
    发明授权
    Combined wafer area pressure control and plasma confinement assembly 有权
    组合晶圆面积压力控制和等离子体约束组件

    公开(公告)号：US08627783B2

    公开(公告)日：2014-01-14

    申请号：US12361490

    申请日：2009-01-28

    申请人： Andreas Fischer ,  Akira Koshiishi

    发明人： Andreas Fischer ,  Akira Koshiishi

    IPC分类号： C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC分类号： H01J37/32642 ,  H01J37/32449 ,  H01J37/32623

    摘要： A combined pressure control/plasma confinement assembly configured for confining a plasma and for at least partially regulating pressure in a plasma processing chamber during plasma processing of a substrate is provided. The assembly includes a movable plasma confinement structure having therein a plurality of perforations and configured to surround the plasma when deployed. The assembly also includes a movable pressure control structure disposed outside of the movable plasma confinement structure such that the movable plasma confinement structure is disposed between the plasma and the movable pressure control structure during the plasma processing, the movable pressure control structure being deployable and retractable along with the movable plasma confinement structure to facilitate handling of the substrate, the movable pressure control structure being independently movable relative to the movable plasma confinement structure to regulate the pressure by blocking at least a portion of the plurality of perforations.

    摘要翻译： 提供了一种组合的压力控制/等离子体限制组件，其被配置为限制等离子体并且用于在等离子体处理室中等离子体处理室中至少部分地调节压力。 组件包括可移动的等离子体限制结构，其中具有多个穿孔并且构造成在展开时包围等离子体。 组件还包括可移动压力控制结构，其设置在可移动等离子体限制结构的外部，使得等离子体约束结构在等离子体处理期间设置在等离子体和可移动压力控制结构之间，可移动压力控制结构可以沿着可展开和缩回 利用可移动的等离子体约束结构以便于处理衬底，可移动压力控制结构可相对于可移动等离子体限制结构独立地移动，以通过阻挡多个穿孔的至少一部分来调节压力。

    COMBINED WAFER AREA PRESSURE CONTROL AND PLASMA CONFINEMENT ASSEMBLY
    29.
    发明申请
    COMBINED WAFER AREA PRESSURE CONTROL AND PLASMA CONFINEMENT ASSEMBLY 有权
    组合式水面压力控制和等离子体限制装置

    公开(公告)号：US20100154709A1

    公开(公告)日：2010-06-24

    申请号：US12361490

    申请日：2009-01-28

    申请人： Andreas Fischer ,  Akira Koshiishi

    发明人： Andreas Fischer ,  Akira Koshiishi

    IPC分类号： C23C16/44 ,  H01P11/00

    CPC分类号： H01J37/32642 ,  H01J37/32449 ,  H01J37/32623

    摘要： A combined pressure control/plasma confinement assembly configured for confining a plasma and for at least partially regulating pressure in a plasma processing chamber during plasma processing of a substrate is provided. The assembly includes a movable plasma confinement structure having therein a plurality of perforations and configured to surround the plasma when deployed. The assembly also includes a movable pressure control structure disposed outside of the movable plasma confinement structure such that the movable plasma confinement structure is disposed between the plasma and the movable pressure control structure during the plasma processing, the movable pressure control structure being deployable and retractable along with the movable plasma confinement structure to facilitate handling of the substrate, the movable pressure control structure being independently movable relative to the movable plasma confinement structure to regulate the pressure by blocking at least a portion of the plurality of perforations.

    摘要翻译： 提供了一种组合的压力控制/等离子体限制组件，其被配置为限制等离子体并且用于在等离子体处理室中等离子体处理室中至少部分地调节压力。 组件包括可移动的等离子体限制结构，其中具有多个穿孔并且构造成在展开时包围等离子体。 组件还包括可移动压力控制结构，其设置在可移动等离子体限制结构的外部，使得等离子体约束结构在等离子体处理期间设置在等离子体和可移动压力控制结构之间，可移动压力控制结构可以沿着可展开和缩回 利用可移动的等离子体约束结构以便于处理衬底，可移动压力控制结构可相对于可移动等离子体限制结构独立地移动，以通过阻挡多个穿孔的至少一部分来调节压力。

    Plasma ignition and sustaining methods and apparatuses
    30.
    发明授权
    Plasma ignition and sustaining methods and apparatuses 有权
    等离子体点火和维持方法和装置

    公开(公告)号：US09174296B2

    公开(公告)日：2015-11-03

    申请号：US12908459

    申请日：2010-10-20

    申请人： Neil Martin Paul Benjamin ,  Andreas Fischer

    发明人： Neil Martin Paul Benjamin ,  Andreas Fischer

    IPC分类号： B23K9/00 ,  B23K10/00 ,  B23K9/013

    CPC分类号： H01J37/32541 ,  B23K9/013 ,  B23K10/00 ,  B23K2101/40 ,  H01J37/3211

    摘要： An apparatus for generating plasma including a plasma generating vessel and a coil having a coil length and a first set of partially enclosing, longitudinally oriented conductive (PELOC) fingers and a second set of PELOC fingers. The PELOC finger sets are oriented along a longitudinal axis of the vessel with each partially enclosing a periphery of the vessel. The two sets of PELOC fingers are oriented fingertips facing fingertips and separated by an inter-set distance that is less than the coil length.

    摘要翻译： 一种用于产生等离子体的装置，包括等离子体发生容器和具有线圈长度的线圈和第一组部分封闭的纵向导电（PELOC）指状物和第二组PELOC指状物。 PELOC手指组沿着容器的纵向轴线定向，每个部分包围容器的周边。 两组PELOC手指是面向指尖的定向指尖，并且以小于线圈长度的间隔距离分开。