摘要:
A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber with a single planar ion flux (PIF) probe, analyzing the resulting information, measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed to reveal a specific fault. The PIF probe is preferably positioned at a grounded surface within the reactor. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement.
摘要:
The invention relates to a composite for packaging material with a symmetrical structure that consists of plastic/aluminum/plastic. The invention also relates to a container covering with a symmetrical composite structure that consists of polyester/aluminum/polyester, whereby polyethylene terephthalate (PET) is advantageously used as polyester.
摘要:
The invention relates to a method for the production of high-strength ribbons having a high modulus of elasticity made of a highly molecular polyolefin, wherein the polyolefins, particularly polypropylene and polyethylene, are extruded through a slotted nozzle, are then subjected to a temperature of 85° to 135° C. for a duration of at least one second, the films are then cut into individual ribbons, if necessary, and stretched at temperatures between 90° and 165° C. in one or more steps, are rolled up or further processed directly into textiles or technical flexible sheet materials. The ribbons can be laminated into multi-layer flexible sheet materials by using adhesives or adhesion promoters, the flexible sheet materials being particularly suitable as protection from ballistic projectiles. In this case particularly in the form of plate-shaped or flexible compound bodies.
摘要:
Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plasma unconfinement condition in a process-independent and recipe-independent manner.
摘要:
A crystalline salt of 3-[2-(dimethylamino)methyl(cyclohex-1-yl)]phenol and hydrogen chloride, preferably in a 1:1 composition, including various crystalline forms of this salt, processes for preparing the various crystalline forms of this salt, pharmaceutical compositions containing the various crystalline forms of this salt, and the use of this salt as a pharmacologically active agent in a pharmaceutical composition to treat or inhibit pain or other disorders or disease states.
摘要:
A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要:
A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.
摘要:
A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要:
A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.