Method and apparatus to detect fault conditions of plasma processing reactor
    21.
    发明授权
    Method and apparatus to detect fault conditions of plasma processing reactor 有权
    检测等离子体处理反应堆故障状况的方法和装置

    公开(公告)号:US07829468B2

    公开(公告)日:2010-11-09

    申请号:US11447946

    申请日:2006-06-07

    IPC分类号: H01L21/302 H01L21/461

    摘要: A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber with a single planar ion flux (PIF) probe, analyzing the resulting information, measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed to reveal a specific fault. The PIF probe is preferably positioned at a grounded surface within the reactor. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement.

    摘要翻译: 提供了一种用于等离子体处理室的故障检测方法。 该方法包括使用单个平面离子通量(PIF)探针监测等离子体室内的等离子体参数,分析所得信息,测量作为时间的函数的等离子体参数并分析所得数据。 数据可以观察,表征,与参考数据进行比较,数字化,处理或分析,以显示特定故障。 PIF探针优选地位于反应器内的接地表面上。 可以检测到的室内故障包括处理室中的过程副产物的积聚,氦泄漏,匹配重新调谐事件,差的稳定化速率和等离子体约束的损失。

    METHODS AND APPARATUS FOR SENSING UNCONFINEMENT IN A PLASMA PROCESSING CHAMBER
    24.
    发明申请
    METHODS AND APPARATUS FOR SENSING UNCONFINEMENT IN A PLASMA PROCESSING CHAMBER 有权
    在等离子体加工室中感测不连续的方法和装置

    公开(公告)号:US20100096361A1

    公开(公告)日:2010-04-22

    申请号:US11427326

    申请日:2006-06-28

    IPC分类号: C23F1/00 G01L23/00

    摘要: Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plasma unconfinement condition in a process-independent and recipe-independent manner.

    摘要翻译: 配置成检测等离子体处理室中的等离子体无约束条件的通用等离子体无约束检测系统及其方法。 检测系统和方法被设计成可以以独立于过程和独立于方法的方式可靠且准确地检测等离子体无约束条件的存在。

    Crystalline Modification of Cefuroximaxetil
    26.
    发明申请
    Crystalline Modification of Cefuroximaxetil 审中-公开
    头孢曲松的结晶修饰

    公开(公告)号:US20090233899A1

    公开(公告)日:2009-09-17

    申请号:US12257009

    申请日:2008-10-23

    申请人: Andreas Fischer

    发明人: Andreas Fischer

    IPC分类号: A61K31/546 C07D501/00

    CPC分类号: C07D501/00

    摘要: A novel crystalline modification of cefuroximaxetil (ε-modification), pharmaceutical compositions containing this modification, and their use.

    摘要翻译: 头孢呋辛酯(ε-修饰)的新型结晶改性,含有此修饰的药物组合物及其用途。

    Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
    27.
    发明申请
    Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
    使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法

    公开(公告)号:US20080020574A1

    公开(公告)日:2008-01-24

    申请号:US11487999

    申请日:2006-07-18

    IPC分类号: C23F1/00 H01L21/302 C23C16/00

    摘要: A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

    摘要翻译: 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极,其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场,其减少等离子体的带电粒子的数量远离等离子体扩散。

    Method and apparatus to detect fault conditions of plasma processing reactor
    28.
    发明申请
    Method and apparatus to detect fault conditions of plasma processing reactor 有权
    检测等离子体处理反应堆故障状况的方法和装置

    公开(公告)号:US20070284246A1

    公开(公告)日:2007-12-13

    申请号:US11447946

    申请日:2006-06-07

    IPC分类号: C23C14/00

    摘要: A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

    摘要翻译: 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察,表征,与参考数据进行比较,数字化,处理或分析,以显示特定故障。 可以用诸如探针的检测器进行监测,该探针优选地保持在与腔室内的表面基本上共面的等离子体室内,并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面,例如接地喷头电极,并且可以是平面离子通量探针(PIF)型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚,氦泄漏,匹配重新调谐事件,差的稳定化速率和等离子体约束的损失。 如果检测器是探针,则探针可以嵌入在等离子体处理室的一部分中,并且可以包括一个或多个气体馈通孔。

    Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
    29.
    发明授权
    Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift 有权
    用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件

    公开(公告)号:US07244336B2

    公开(公告)日:2007-07-17

    申请号:US10736666

    申请日:2003-12-17

    IPC分类号: C23F1/00

    摘要: A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.

    摘要翻译: 适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。 组件包括导电下环,陶瓷中间环和上环。 中间环覆盖在下环上并且适于经由下环连接到RF电极。 上环覆盖中间环,并且具有暴露于等离子体反应室内部的上表面。

    Reducing plasma ignition pressure
    30.
    发明授权
    Reducing plasma ignition pressure 有权
    降低等离子体点火压力

    公开(公告)号:US07193173B2

    公开(公告)日:2007-03-20

    申请号:US10883583

    申请日:2004-06-30

    IPC分类号: B23K10/00

    摘要: A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

    摘要翻译: 公开了一种用于处理半导体衬底的等离子体处理系统中的方法。 等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。 该方法包括在等离子体点火步骤中点燃等离子体。 当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时,执行等离子体点火步骤。 该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。 基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压,该偏置补偿电压高于第一偏置补偿电压,第二室压力基本上等于第一室压力。