公开(公告)号：US20230162954A1

公开(公告)日：2023-05-25

申请号：US17530809

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： William R. JOHANSON ,  Keith A. MILLER ,  Cheng-Hsiung Matthew TSAI ,  John C. FORSTER ,  Mukund SUNDARARAJAN

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/332 ,  H01J37/34

Abstract: Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support includes: an upper assembly having a base plate assembly coupled to a lower surface of a cooling plate, wherein the base plate assembly includes a plurality of electrical feedthroughs, and wherein the cooling plate includes a plurality of openings aligned with the plurality of electrical feedthroughs; an electrostatic chuck disposed on the upper assembly and removably coupled to the cooling plate, wherein the electrostatic chuck has a chucking electrode disposed therein that is electrically coupled to a first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and an inner tube coupled to the cooling plate and configured to provide an RF delivery path to the electrostatic chuck.

公开(公告)号：US20230122956A1

公开(公告)日：2023-04-20

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  John C. FORSTER ,  Irena H. WYSOK ,  Tiefeng SHI ,  Gang FU ,  Renu WHIG ,  Keith A. MILLER ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Jianxin LEI ,  Rongjun WANG ,  Tza-Jing GUNG ,  Kirankumar Neelasandra SAVANDAIAH ,  Avinash NAYAK ,  Lei ZHOU

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：US20210375650A1

公开(公告)日：2021-12-02

申请号：US16889599

申请日：2020-06-01

Applicant: Applied Materials, Inc.

Inventor： Nitin Bharadwaj SATYAVOLU ,  Kirankumar Neelasandra SAVANDAIAH ,  Hari Prasath RAJENDRAN ,  Srinivasa Rao YEDLA ,  Lakshmikanth Krishnamurthy SHIRAHATTI ,  Thomas BREZOCZKY ,  Keith A. MILLER

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/683

Abstract: A method and apparatus for substrate processing and a cluster tool including a transfer chamber assembly and a plurality of processing assemblies. The transfer chamber assembly and processing assemblies may include processing platforms for ALD, CVD, PVD, etch, cleaning, implanting, heating, annealing, and/or polishing processes. Processing chamber volumes are sealed from the transfer chamber volume using a support chuck on which a substrate is disposed thereon. The support chuck is raised to form an isolation seal between the processing chamber volume and the transfer chamber volume using a bellows assembly and a chuck sealing surface.

公开(公告)号：US20210317568A1

公开(公告)日：2021-10-14

申请号：US16846505

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Chao DU ,  Xing CHEN ,  Keith A. MILLER ,  Jothilingam RAMALINGAM ,  Jianxin LEI

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

公开(公告)号：US20200321202A1

公开(公告)日：2020-10-08

申请号：US16829038

申请日：2020-03-25

Applicant: Applied Materials, Inc.

Inventor： William R. JOHANSON, JR. ,  Alexander ERENSTEIN ,  Ilya LAVITSKY ,  Keith A. MILLER

IPC: H01J37/34 ,  C23C14/06 ,  C23C14/34

Abstract: A shield kit for use in a process chamber includes a body configured to be inserted into a source disposed on a top surface of the process chamber. The body includes a top plate, a pair of far plates connected to the top plate, and a pair of side plates connected to the pair of far plates. The shield kit further includes a cooling manifold disposed on an outer surface the top plate within an opening of the source, and a vacuum seal disposed on the outer surface of the top plate and configured to vacuum seal the opening of the source. At least one of the pair of side plates has a gap extending that is aligned with at least one cathode opening on a top surface of the source.

公开(公告)号：US20170253959A1

公开(公告)日：2017-09-07

申请号：US15448996

申请日：2017-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/54

CPC classification number: C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76871 ,  H01L21/76879

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

公开(公告)号：US20140271081A1

公开(公告)日：2014-09-18

申请号：US14217137

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Ilya LAVITSKY ,  Keith A. MILLER

IPC: C23C14/54 ,  B25J18/00

CPC classification number: H01L21/67103 ,  H01L21/67259 ,  H01L21/67742 ,  H01L21/67748

Abstract: Processing chamber shutter blade and robot blade assemblies are constructed to eliminate thermal effects on the placement of elements in processing chambers. Such blade assemblies may contain at least two parts, which may include a positioning member including a low CTE material and a thermal compensating member including a high CTE material. The positioning member includes a coupling point and a reference point on a reference axis separated by a first distance. The thermal compensating member includes a connection point and a controlled point separated by another distance that is less than the first distance. A distance ratio of the first distance to the other distance is substantially equal to a CTE ratio of the high CTE material to the low CTE material, and the positioning member is joined to the thermal compensating member through the coupling point and the connection point.

Abstract translation: 处理室快门叶片和机器人叶片组件被构造成消除对处理室中元件放置的热影响。 这种刀片组件可以包含至少两个部件，其可以包括包括低CTE材料的定位构件和包括高CTE材料的热补偿构件。 定位构件包括耦合点和在第一距离上分开的参考轴上的参考点。 热补偿构件包括连接点和被隔开另一距离小于第一距离的受控点。 第一距离与另一距离的距离比基本上等于高CTE材料与低CTE材料的CTE比率，并且定位构件通过耦合点和连接点接合到热补偿构件。

公开(公告)号：US20140251800A1

公开(公告)日：2014-09-11

申请号：US13785193

申请日：2013-03-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith A. MILLER ,  Martin LEE RIKER

IPC: C23C14/54 ,  C23C14/35

CPC classification number: C23C14/3407 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3455 ,  H01J37/3497

Abstract: In some embodiments, a sputter source for a process chamber may include: a first enclosure having a top, sides and an open bottom; a target coupled to the open bottom; an electrical feed coupled to the top of the first enclosure proximate a central axis of the first enclosure to provide power to the target via the first enclosure; a magnet assembly having a shaft, a support arm coupled to the shaft, and a magnet coupled to the support arm disposed within the first enclosure; a first rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about the central axis of the first enclosure; and a second rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about a central axis of the magnet assembly.

Abstract translation: 在一些实施例中，用于处理室的溅射源可以包括：具有顶部，侧面和开口底部的第一外壳; 一个目标耦合到开放的底部; 耦合到靠近第一外壳的中心轴线的第一外壳的顶部的电源，以经由第一外壳向目标提供电力; 具有轴的磁体组件，联接到所述轴的支撑臂和耦合到设置在所述第一外壳内的所述支撑臂的磁体; 第一旋转致动器，其设置在离第一外壳的中心轴线的轴线处并且可旋转地联接到磁体，以使磁体围绕第一外壳的中心轴线旋转; 以及第二旋转致动器，其离轴设置到第一外壳的中心轴线并且可旋转地联接到磁体，以使磁体围绕磁体组件的中心轴线旋转。