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    Method and apparatus for reducing particle contamination in a deposition system
    21.
    发明申请
    Method and apparatus for reducing particle contamination in a deposition system 有权
    用于减少沉积系统中的颗粒污染的方法和装置

    公开(公告)号：US20070215048A1

    公开(公告)日：2007-09-20

    申请号：US11377920

    申请日：2006-03-16

    申请人： Kenji Suzuki ,  Atsushi Gomi ,  Masamichi Hara ,  Yasushi Mizusawa

    发明人： Kenji Suzuki ,  Atsushi Gomi ,  Masamichi Hara ,  Yasushi Mizusawa

    IPC分类号： C23C16/00

    CPC分类号： C23C16/16 ,  C23C16/4481 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/45574

    摘要： A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.

    摘要翻译： 描述了用于减少沉积系统中的基底的颗粒污染的方法和系统。 沉积系统包括设置在其中的一个或多个颗粒扩散器，并且构造成防止或部分地防止膜前体颗粒通过，或破坏或部分破坏膜前体颗粒。 颗粒扩散器可以安装在膜前体蒸发系统或蒸汽输送系统或蒸汽分配系统中，或者其两个或多个。

    Method and apparatus for reducing particle formation in a vapor distribution system
    23.
    发明申请
    Method and apparatus for reducing particle formation in a vapor distribution system 审中-公开
    用于减少蒸气分配系统中的颗粒形成的方法和装置

    公开(公告)号：US20070218200A1

    公开(公告)日：2007-09-20

    申请号：US11377237

    申请日：2006-03-16

    申请人： Kenji Suzuki ,  Atsushi Gomi ,  Masamichi Hara ,  Yasushi Mizusawa

    发明人： Kenji Suzuki ,  Atsushi Gomi ,  Masamichi Hara ,  Yasushi Mizusawa

    IPC分类号： C23C16/00

    CPC分类号： C23C16/16 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/45574

    摘要： A method and system is described for reducing particle contamination in a vapor distribution system. The vapor distribution system comprises a housing and a vapor distribution head comprising a plurality of openings configured to introduce a film precursor vapor to a deposition system. The housing and vapor distribution head define a plenum coupled to a film precursor evaporation system, and configured to receive the film precursor vapor from the evaporation system and distribute the film precursor vapor within the deposition system through the plurality of openings. In order to reduce particle contamination, the vapor distribution system is designed to reduce the difference, or ratio, between the pressure in the plenum and the pressure in the deposition system. For example, the plenum pressure can be less than twice the pressure in the process space, or can be less than 50 mTorr, 30 mTorr or even 20 mTorr than the pressure in the process space.

    摘要翻译： 描述了一种用于减少蒸气分配系统中的颗粒污染的方法和系统。 蒸气分配系统包括壳体和蒸汽分配头，蒸汽分配头包括多个开口，其被配置为将膜前体蒸气引入沉积系统。 壳体和蒸气分配头限定了与膜前体蒸发系统耦合的增压室，并且构造成从蒸发系统接收膜前体蒸汽并且通过多个开口将膜前体蒸汽分散在沉积系统内。 为了减少颗粒污染，蒸汽分配系统被设计成减小气室中的压力与沉积系统中的压力之间的差异或比例。 例如，充气压力可以小于过程空间中的压力的​​两倍，或者可以小于处理空间中的压力的​​50mTorr，30mTorr或甚至20mTorr。

    GAS SUPPLY METHOD AND GAS SUPPLY DEVICE
    25.
    发明申请
    GAS SUPPLY METHOD AND GAS SUPPLY DEVICE 审中-公开
    气体供应方法和气体供应装置

    公开(公告)号：US20100062158A1

    公开(公告)日：2010-03-11

    申请号：US12568421

    申请日：2009-09-28

    申请人： Masamichi Hara ,  Atsushi Gomi ,  Osamu Yokoyama ,  Toshimasa Tanaka ,  Shinji Maekawa ,  Satoshi Taga

    发明人： Masamichi Hara ,  Atsushi Gomi ,  Osamu Yokoyama ,  Toshimasa Tanaka ,  Shinji Maekawa ,  Satoshi Taga

    IPC分类号： C23C16/448 ,  C23C16/52

    CPC分类号： C23C16/4481 ,  C23C16/52

    摘要： A gas supply method supplies a source gas produced by heating and sublimating a solid source material in a source material container to a consuming area. The method includes the steps of: (a) flowing a carrier gas through a processing gas supply line and measuring a gas pressure therein; (b) heating the solid source material to produce the source gas; (c) supplying a carrier gas which has the same flow rate as the carrier gas in the step (a) to the source material container and measuring a gas pressure in the processing gas supply line while flowing the source gas together with the carrier gas through the processing gas supply line; and (d) calculating the flow rate of the source gas based on the pressure measurement values obtained in the steps (a) and (c), and the flow rate of the carrier gas.

    摘要翻译： 气体供给方法将通过将源材料容器中的固体源材料进行加热和升华而产生的源气体供给到消耗区域。 该方法包括以下步骤：（a）使载气流过处理气体供应管线并测量其中的气体压力; （b）加热固体源材料以产生源气体; （c）将与步骤（a）中的载气相同的流速的载气供给到原料容器，并在将原料气与载气一起流过的同时测量处理气体供应管线中的气体压力 处理气体供应管线; 和（d）基于步骤（a）和（c）中获得的压力测量值和载气的流量计算源气体的流量。

    Integrated substrate processing in a vacuum processing tool
    27.
    发明授权
    Integrated substrate processing in a vacuum processing tool 有权
    在真空加工工具中集成基板加工

    公开(公告)号：US08034406B2

    公开(公告)日：2011-10-11

    申请号：US11526767

    申请日：2006-09-26

    申请人： Tadahiro Ishizaka ,  Masamichi Hara ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Masamichi Hara ,  Yasushi Mizusawa

    IPC分类号： C23C16/00 ,  C23C14/00

    CPC分类号： C23C16/54 ,  C23C14/566

    摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10−8 Ton or lower, preferably 5×10−8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.

    摘要翻译： 提供了用于Cu金属化中的集成基板处理的方法和系统。 该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，以及对 基质。 在整个沉积过程中，多个处理系统和基板传送系统将背景气体的基础压力保持在6.8×10-8吨或更低，优选5×10-8托或更低。 根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。 根据另一实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

    Method of integrating PEALD Ta-containing films into Cu metallization
    28.
    发明授权
    Method of integrating PEALD Ta-containing films into Cu metallization 有权
    将含有PEALD的含Ta的膜整合到Cu金属化中的方法

    公开(公告)号：US07959985B2

    公开(公告)日：2011-06-14

    申请号：US11378263

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： C23C16/00 ,  H05H1/00

    CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

    摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

    摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

    Integrated substrate processing in a vacuum processing tool
    29.
    发明申请
    Integrated substrate processing in a vacuum processing tool 有权
    在真空加工工具中集成基板加工

    公开(公告)号：US20080075835A1

    公开(公告)日：2008-03-27

    申请号：US11526767

    申请日：2006-09-26

    申请人： Tadahiro Ishizaka ,  Masamichi Hara ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Masamichi Hara ,  Yasushi Mizusawa

    IPC分类号： B05D5/12 ,  C23C16/00

    CPC分类号： C23C16/54 ,  C23C14/566

    摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10−8 Torr or lower, preferably 5×10−8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.

    摘要翻译： 提供了用于Cu金属化中的集成基板处理的方法和系统。 该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，以及对 基质。 多个处理系统和基板传送系统在背景气体的基础压力下保持6.8×10 -8乇或更低，优选为5×10 -8乇或更低，在 综合沉积工艺。 根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。 根据另一个实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

    VACUUM PROCESSING APPARATUS
    30.
    发明申请
    VACUUM PROCESSING APPARATUS 审中-公开
    真空加工设备

    公开(公告)号：US20120014768A1

    公开(公告)日：2012-01-19

    申请号：US13181011

    申请日：2011-07-12

    申请人： Tetsuya MIYASHITA ,  Masamichi Hara ,  Yasushi Mizusawa ,  Toshiharu Hirata

    发明人： Tetsuya MIYASHITA ,  Masamichi Hara ,  Yasushi Mizusawa ,  Toshiharu Hirata

    IPC分类号： H01L21/677

    CPC分类号： H01L21/67173 ,  H01L21/67736

    摘要： In a vacuum processing apparatus, a process station includes processing regions arranged in a row at intervals to perform vacuum processing on substrates, the substrates being sequentially transferred between the processing regions from upstream to downstream; a first transport unit for transferring the substrates in a first preliminary vacuum chamber to the processing region at an upstream end; a second transport unit arranged between the adjacent processing regions; and a third transport unit for transferring the substrates from the processing region at a downstream end to a second preliminary vacuum chamber. The control unit outputs a control signal such that in the transfer operations in which the substrates are respectively transferred to the subsequent downstream processing regions from the first preliminary vacuum chamber to the processing region at the downstream end, time periods of at least two transfer operations partially or totally overlap with each other.

    摘要翻译： 在真空处理装置中，处理站包括间隔地配置成一行的处理区域，对基板进行真空处理，基板从上游到下游依次转印在处理区域之间; 用于将第一预备真空室中的基板转移到上游端的处理区域的第一输送单元; 布置在相邻处理区域之间的第二传送单元; 以及用于将基板从下游端的处理区域转移到第二预备真空室的第三输送单元。 控制单元输出控制信号，使得在将基板分别从第一预备真空室向下游端的处理区转移到后续的下游处理区域的转印操作中，至少两个转印操作的时间段部分地 或完全重叠。