摘要:
A radiation-sensitive resin composition comprises (a) an alkali-soluble resin, (b) a 1,2-quinone diazide compound, and (c) an aromatic compound having a specified molecular structure, as essential constituents. The composition is extremely useful for forming a positive type photoresist on a substrate having a high reflectance.
摘要:
A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.
摘要:
A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500–100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.
摘要:
A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), wherein A1 and A2 are an acid-dissociable monovalent organic group, R1 is hydrogen, monovalent (halogenated) hydrocarbon, halogen, or amino, R2 is monovalent (halogenated) hydrocarbon group, or halogen. A method of preparing such a polysiloxane, a silicon-containing alicyclic compound providing this polysiloxane, and a radiation-sensitive resin composition comprising this polysiloxane are also provided. The polysiloxane is useful as a resin component for a resist material, effectively senses radiation with a short wavelength, exhibits high transparency to radiation and superior dry etching properties, and excels in basic resist properties required for resist materials such as high sensitivity, resolution, developability, etc.
摘要:
A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, an acid diffusion controller, and a mixed solvent. The radiation-sensitive acid generator includes a compound (I) shown by a following general formula (I). The mixed solvent includes about 50 mass % to about 90 mass % of propylene glycol monomethyl ether acetate, wherein M+ represents a sulfonium cation or an iodonium cation, R represents a hydrogen atom or a hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, n represents an integer from 1 to 10, and m represents an integer from 1 to 4.
摘要:
A compound shown by the following formula (1) can be used as a material for a radiation-sensitive composition capable of forming a resist film which effectively responds to electron beams or the like, exhibits low roughness, and can form a high precision minute pattern in a stable manner.
摘要:
A radiation-sensitive resin composition exhibiting only extremely controlled change in the sensitivity after storage when used as a chemically-amplified resist possessing high transparency at a wavelength of 193 nm or less and particularly excellent depth of focus (DOF) is provided.The radiation-sensitive resin composition comprises (A) a siloxane resin having a structural unit (I) shown by the following formula (I) and/or a structural unit (II) shown by the following formula (II), (B) a photoacid generator, and (C) a solvent, the content of nitrogen-containing compounds in the composition being not more than 100 ppm, wherein A and B individually represent a substituted or unsubstituted divalent linear, branched, or cyclic hydrocarbon group, R1 represents a monovalent acid-dissociable group, and R2 represents a hydrogen atom or monovalent acid-dissociable group.
摘要:
A novel polysiloxane having high transparency to radiations with a wavelength of 193 nm or less, particularly 157 nm or less, and exhibiting superior dry etching resistance and a radiation-sensitive resin composition comprising the polysiloxane exhibiting superior sensitivity, resolution, and the like are provided. The polysiloxane is a resin having the structural unit (I) and/or structural unit (II) of the following formula (1), and having an acid-dissociable group, wherein R1 represents a monovalent aromatic group substituted with a fluorine atom or a fluoroalkyl group or a monovalent aliphatic group substituted with a fluorine atom or a fluoroalkyl group and R2 represents the above a monovalent aromatic group, the above monovalent aliphatic group, a hydrogen atom, a monovalent hydrocarbon group, haloalkyl group, or amino group. The radiation-sensitive resin composition (A) comprises the polysiloxane (A) and the photoacid generator (B)
摘要:
An anti-reflection coating-forming composition is provided. This composition includes a polymer and a solvent. The polymer has a structural unit represented by the formula (1): wherein R1 is a monovalent atom other than a hydrogen atom or a monovalent group, and n is an integer of 0-4, provided that when n is an integer of 2-4, a plural number of R1's are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group. The anti-reflection coating formed from this composition has a high antireflective effect, does not generate intermixing with a resist film, and enables a good resist pattern profile excellent in resolution and precision in cooperation with a positive or negative resist.
摘要:
A positive-tone radiation-sensitive resin composition comprising: (A) a low molecular weight compound having at least one amino group in which the nitrogen atom has at least one hydrogen atom bonded thereto and at least one of the hydrogen atoms is replaced by a t-butoxycarbonyl group, (B) a photoacid generator, and (C-1) a resin insoluble or scarcely soluble in alkali which is protected by an acid-dissociable group and becomes soluble in alkali when the acid-dissociable group dissociates or (C-2) an alkali-soluble resin and an alkali solubility control agent is disclosed. Also disclosed is a negative-tone radiation-sensitive resin composition comprising the low molecular weight compound (A), the photoacid generator (B), an alkali-soluble resin (D), and a compound capable of crosslinking with the alkali-soluble resin in the presence of an acid(E). The composition are useful as a chemically amplified resist which effectively responds to various radiations, exhibits superior sensitivity and resolution, forms fine patterns at a high precision and in a stable manner even if the patterns are isolated line patterns.