公开(公告)号：US09664973B2

公开(公告)日：2017-05-30

申请号：US14348359

申请日：2013-11-27

Applicant: Beijing BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Changjiang Yan ,  Jing Li ,  Tiansheng Li ,  Zhenyu Xie ,  Xu Chen

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  H01L29/786

CPC classification number: G02F1/1368 ,  G02F1/13439 ,  G02F1/136209 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/78633

Abstract: The present invention discloses an array substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology, in order to reduce the leakage current of the TFT, improve the stability of the TFT, and enhance the display effect of the display device. The array substrate comprises: a transparent substrate, a TFT on the transparent substrate, a first passivation layer covering the TFT, a first transparent electrode on a surface of the first passivation layer, and a light blocking structure for preventing light transmission provided at a position, corresponding to a channel of the TFT, on a side of the TFT away from the transparent substrate.

公开(公告)号：US09490366B2

公开(公告)日：2016-11-08

申请号：US14354204

申请日：2013-06-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Changjiang Yan ,  Jun Long ,  Zongmin Tian ,  Zhenyu Xie ,  Xu Chen

IPC: H01L29/786 ,  H01L27/146 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L27/14623 ,  H01L27/14663 ,  H01L29/66969 ,  H01L29/78693

Abstract: A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.

Abstract translation: 提供薄膜晶体管，非晶硅平板检测基板和制造方法。 用于薄膜晶体管的源电极和漏电极的材料是通过沉积含有不低于预设值的氢离子的绝缘物质而从非晶金属氧化物有源层的材料转换的导体，其降低了价带水平 源电极和漏电极和有源层之间的差异实现了良好的晶格匹配并且改善了薄膜晶体管的电特性。

公开(公告)号：US09477019B2

公开(公告)日：2016-10-25

申请号：US14488075

申请日：2014-09-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jing Li ,  Changjiang Yan ,  Wenyu Zhang

IPC: G02B5/20 ,  G02B26/02

CPC classification number: G02B5/201 ,  G02B26/026

Abstract: The present invention relates to the field of displays and discloses a color filter substrate, a display device and a method for manufacturing a color filter substrate. The color filter substrate comprises: a transparent substrate; a light-electricity converting module, provided on the transparent substrate and configured to convert a light beam incident from the transparent substrate into electric energy. The display device comprises the color filter substrate. In the invention, a light-electricity converting module is set on a transparent substrate, thus a light beam incident from the transparent substrate may be converted into electric energy, so that the sunlight transmitted into a display panel may be transformed into electric energy; because the solar energy is abundant, it may meet the demand of the display panel, and the service time of the display panel may be prolonged.

Abstract translation: 显示器技术领域本发明涉及显示器领域，并公开了一种滤色器基板，显示装置及其制造方法。 滤色器基板包括：透明基板; 光电转换模块，设置在所述透明基板上并且被配置为将从所述透明基板入射的光束转换为电能。 显示装置包括滤色器基板。 在本发明中，将光电转换模块设置在透明基板上，从而可以将从透明基板入射的光束转换成电能，从而将透射到显示面板的太阳光转换为电能; 因为太阳能充足，所以可以满足显示面板的需要，可延长显示面板的使用时间。

公开(公告)号：US20160079287A1

公开(公告)日：2016-03-17

申请号：US14743845

申请日：2015-06-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Changjiang Yan ,  Kai Lu ,  Jian Guo ,  Zhenyu Xie

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/311 ,  H01L29/66 ,  H01L21/768 ,  H01L21/3213

CPC classification number: H01L27/1259 ,  H01L21/31116 ,  H01L21/76804 ,  H01L29/66765

Abstract: The invention relates to the field of display technologies, and discloses a method for producing a via, a method for producing an array substrate, an array substrate and a display device to prevent a chamfer from being formed in producing the via, to promote the product quality and improve the display effect of the display device. The method for producing a via comprises: employing a first etching process to partially etch a top film layer in an area that needs to form a via above an electrode, wherein the vertical etching amount achieved by employing the first etching process is less than the thickness of the top film layer; and employing a second etching process for which the vertical etching rate is larger than the lateral etching rate to etch the remaining part in the area that needs to form a via, until the electrode is exposed.

Abstract translation: 本发明涉及显示技术领域，并且公开了一种通孔的制造方法，阵列基板的制造方法，阵列基板和显示装置，以防止在形成通孔时形成倒角，以促进产品 提高显示设备的显示效果。 用于制造通孔的方法包括：采用第一蚀刻工艺以在需要在电极上形成通孔的区域中部分蚀刻顶部膜层，其中通过采用第一蚀刻工艺获得的垂直蚀刻量小于厚度 的顶层薄膜层; 并且使用垂直蚀刻速率大于横向蚀刻速率的第二蚀刻工艺来蚀刻需要形成通孔的区域中的剩余部分，直到电极露出。

公开(公告)号：US20150053967A1

公开(公告)日：2015-02-26

申请号：US14387390

申请日：2013-07-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Changjiang Yan ,  Tiansheng Li ,  Shaoying Xu ,  Zhenyu Xie ,  Xu Chen

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02554 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02617 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78693

Abstract: An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.

Abstract translation: 描述了氧化物TFT，其制备方法，阵列衬底和显示装置。 该方法包括在基板上形成栅电极，栅极绝缘层，沟道层，势垒层以及源电极和漏电极; 沟道层通过在含有H 2，Ar和O 2的第一混合气体中沉积无定形氧化物半导体膜而形成。 通过在包含H 2，Ar和O 2的第一混合气体中沉积沟道层，可以有效地减轻TFT的滞后现象，从而提高显示面板的显示质量。

公开(公告)号：US20140231804A1

公开(公告)日：2014-08-21

申请号：US14128833

申请日：2012-12-03

Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO LTD.

Inventor： Changjiang Yan ,  Zhenyu Xie ,  Shaoying Xu ,  Tiansheng Li

IPC: H01L31/105 ,  H01L29/786 ,  H01L29/66 ,  H01L31/0256

CPC classification number: H01L31/1055 ,  H01L27/1214 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L29/66765 ,  H01L29/78669 ,  H01L31/0256

Abstract: A sensor and its fabrication method are provided, the sensor comprises: a base substrate (32), a group of gate lines (30) and a group of data lines (31) arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines (30) and the group of data lines (31), each sensing element comprising a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes (33, 34) are positioned between the active layer (36) and the gate electrode (38). The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

Abstract translation: 提供一种传感器及其制造方法，所述传感器包括：基底（32），一组栅极线（30）和一组布置为彼此交叉的数据线（31），以及多个感测元件 在阵列中并且由栅极线组（30）和数据线组（31）限定，每个感测元件包括TFT器件和光电二极管感测器件，其中TFT器件的沟道区域被反相，并且源极 并且漏电极（33,34）位于有源层（36）和栅电极（38）之间。 该传感器减少了掩模的数量和生产成本，简化了生产过程，从而显着提高了生产能力和无缺陷率。

公开(公告)号：US20140125890A1

公开(公告)日：2014-05-08

申请号：US14127051

申请日：2013-02-26

Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhenyu Xie ,  Wenyu Zhang ,  Shaoying Xu ,  Tiansheng Li ,  Changjiang Yan

IPC: G02B27/22

CPC classification number: G02B27/2264 ,  H04N13/332 ,  H04N13/398

Abstract: Embodiments of the present invention provide three-dimensional glasses and a control chip thereof. The three-dimensional glasses comprise: a normal black mode liquid crystal eyeglass; a normal white mode liquid crystal eyeglass; and a control chip, connected to both of the normal black mode liquid crystal eyeglass and the normal white mode liquid crystal eyeglass, wherein a voltage output terminal of the control chip simultaneously supplies a high level or a low level to the normal black mode liquid crystal eyeglass and the normal white mode liquid crystal eyeglass based on a predetermined high and low level switching frequency.

Abstract translation: 本发明的实施例提供三维眼镜及其控制芯片。 三维眼镜包括：正常的黑色液晶眼镜; 正常的白色模式液晶眼镜; 以及连接到普通黑色液晶眼镜和普通白色液晶眼镜两者的控制芯片，其中控制芯片的电压输出端同时向正常的黑色模式液晶提供高电平或低电平 基于预定的高低电平开关频率的眼镜和正常的白色液晶眼镜。