-
1.发明授权Thin film transistor array substrate, manufacturing method thereof, and display device 有权薄膜晶体管阵列基板及其制造方法以及显示装置公开(公告)号：US09530807B2
公开(公告)日：2016-12-27
申请号：US13993666
申请日：2012-12-10
发明人： Tiansheng Li , Wenyu Zhang , Zhenyu Xie
IPC分类号： H01L27/12 , H01L29/786 , H01L33/36 , G02F1/1343 , G02F1/1337
CPC分类号： H01L27/1288 , G02F1/133707 , G02F1/134363 , G02F2001/134318 , H01L27/124 , H01L29/786 , H01L33/36
摘要： A thin film transistor (TFT) array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method comprises: forming a first passivation layer (8) on a substrate (1), and forming a board wiring PAD-region via hole (11) in the first passivation layer (8) above the board wiring PAD region (11) through a first patterning process; forming a second passivation layer (16) on the substrate (1) formed with the board wiring PAD-region via hole (11), and forming a pixel-region via hole (15) in the first passivation layer (8) and the second passivation layer (16) above the display electrode (7) through a second patterning process in such a way that the pixel-region via hole (15) has a top-size smaller than its bottom-size; and applying a transparent conductive layer on the substrate (1) formed with the pixel-region via hole (15) to form a second display electrode.
摘要翻译： 提供薄膜晶体管（TFT）阵列基板，其制造方法和显示装置。 该制造方法包括：在基板（1）上形成第一钝化层（8），并且在板布线PAD区域（11）上方的第一钝化层（8）中形成板布线PAD区域通孔（11） 通过第一图案化过程; 在形成有所述基板配线PAD区域通孔（11）的基板（1）上形成第二钝化层（16），并且在所述第一钝化层（8）中形成像素区域通孔（15） 通过第二图案化工艺使显示电极（7）上方的钝化层（16）以像素区域通孔（15）的顶端尺寸小于其底部尺寸; 以及在形成有像素区域通孔（15）的衬底（1）上施加透明导电层以形成第二显示电极。
-
公开(公告)号：US09484364B2
公开(公告)日：2016-11-01
申请号：US14386209
申请日：2013-12-03
发明人： Jing Li , Wenyu Zhang , Jiaxiang Zhang
IPC分类号： H01L27/12 , H01L29/417 , H01L23/50
CPC分类号： H01L27/124 , G02F1/136286 , G02F2201/40 , H01L23/50 , H01L27/1222 , H01L27/1288 , H01L29/41733 , H01L29/41741 , H01L29/41775 , H01L29/78642
摘要： An array substrate and a display device are presented. The array substrate includes: a base substrate and a plurality of thin film transistor units located on the base substrate, wherein, the thin film transistor unit includes: a first gate electrode located on the base substrate, a gate insulating layer located on the first gate electrode, a drain electrode disposed in the same layer as the first gate electrode, an active layer located on the drain electrode, a source electrode located on the active layer, a first transparent conductive layer is provided between the base substrate and the first gate electrode and the drain electrode that are disposed in the same layer, and the gate insulating layer is also disposed between the first gate electrode plus the first transparent conductive layer beneath it and the drain electrode plus the first transparent conductive layer beneath it.
摘要翻译： 呈现阵列基板和显示装置。 阵列基板包括：基底基板和位于基底基板上的多个薄膜晶体管单元，其中，薄膜晶体管单元包括：位于基底基板上的第一栅电极，位于第一栅极上的栅极绝缘层 电极，设置在与第一栅电极相同的层中的漏电极，位于漏电极上的有源层，位于有源层上的源电极，第一透明导电层设置在基底基板和第一栅电极之间 和漏电极，并且栅绝缘层也设置在第一栅电极与其下的第一透明导电层之间，漏电极加上其下的第一透明导电层。
-
公开(公告)号：US20180170090A1
公开(公告)日：2018-06-21
申请号：US15579088
申请日：2017-05-10
发明人： Zongmin Tian , Xiangquan Zhai , Wenyu Zhang
IPC分类号： B41N1/16 , G02F1/1337 , G02F1/13
CPC分类号： B41N1/16 , G02F1/1303 , G02F1/1337
摘要： The present disclosure discloses a transfer printing plate assembly, which includes a transfer printing plate for transfer printing of aligning agent, and a printing cylinder for fixing the transfer printing plate. The transfer printing plate includes a first side, a second side opposite to the first side, and a first connection element at each of the first side and the second side. The printing cylinder includes a second connection element for engaging with the first connection element to prevent the transfer printing plate from shrinking in an axial direction of the printing cylinder when the transfer printing plate is fixed to the printing cylinder.
-
4.发明授权Fabricating method of thin film transistor, thin film transistor and display panel 有权薄膜晶体管，薄膜晶体管和显示面板的制造方法公开(公告)号：US09324873B2
公开(公告)日：2016-04-26
申请号：US14421931
申请日：2014-04-25
发明人： Jing Li , Zhenyu Xie , Xu Chen , Wenyu Zhang , Da Xu
IPC分类号： H01L21/00 , H01L21/20 , H01L27/092 , H01L29/786 , H01L21/02 , H01L29/66 , H01L21/311
CPC分类号： H01L29/78675 , H01L21/0217 , H01L21/02532 , H01L21/02592 , H01L21/02672 , H01L21/31111 , H01L27/1281 , H01L29/66757 , H01L29/78603
摘要： Embodiments of the invention provide a fabricating method a thin film transistor, a thin film transistor and a display panel, so as to improve carrier mobility in the polycrystalline silicon. The fabricating method a thin film transistor comprises following M1, depositing an inducing layer on a substrate; M2, etching a recess in the inducing layer by an etching process, the recess having an edge with a prescribed shape; M3, depositing an amorphous silicon layer in the recess having an edge with a prescribed shape, and inducing the amorphous silicon layer to form a polycrystalline silicon layer by crystallization method, polycrystalline silicon grains in the polycrystalline silicon layer arranging in a direction vertical to the edge of the recess by the limitation of the edge of the recess, and the polycrystalline silicone layer and the inducing layer together forming a semiconductor layer; and M4, forming a gate insulating layer, a gate, a passivation layer and a source and a drain connecting with the semiconductor layer sequentially on the semiconductor layer.
摘要翻译： 本发明的实施例提供薄膜晶体管，薄膜晶体管和显示面板的制造方法，以提高多晶硅中的载流子迁移率。 制造方法薄膜晶体管包括以下M1，在衬底上沉积诱导层; M2，通过蚀刻处理蚀刻诱导层中的凹部，凹部具有规定形状的边缘; M3，在具有规定形状的边缘的凹部中沉积非晶硅层，并且通过结晶法诱导非晶硅层形成多晶硅层，多晶硅层中的多晶硅晶粒沿垂直于边缘的方向排列 通过限制凹部的边缘，并且多晶硅层和诱导层一起形成半导体层; 和M4，在半导体层上依次形成栅极绝缘层，栅极，钝化层以及与半导体层连接的源极和漏极。
-
5.发明授权Color filter substrate, display device and method for manufacturing a color filter substrate 有权滤色器基板，显示装置及滤色器基板的制造方法公开(公告)号：US09477019B2
公开(公告)日：2016-10-25
申请号：US14488075
申请日：2014-09-16
发明人： Jing Li , Changjiang Yan , Wenyu Zhang
CPC分类号： G02B5/201 , G02B26/026
摘要： The present invention relates to the field of displays and discloses a color filter substrate, a display device and a method for manufacturing a color filter substrate. The color filter substrate comprises: a transparent substrate; a light-electricity converting module, provided on the transparent substrate and configured to convert a light beam incident from the transparent substrate into electric energy. The display device comprises the color filter substrate. In the invention, a light-electricity converting module is set on a transparent substrate, thus a light beam incident from the transparent substrate may be converted into electric energy, so that the sunlight transmitted into a display panel may be transformed into electric energy; because the solar energy is abundant, it may meet the demand of the display panel, and the service time of the display panel may be prolonged.
摘要翻译： 显示器技术领域本发明涉及显示器领域，并公开了一种滤色器基板，显示装置及其制造方法。 滤色器基板包括：透明基板; 光电转换模块，设置在所述透明基板上并且被配置为将从所述透明基板入射的光束转换为电能。 显示装置包括滤色器基板。 在本发明中，将光电转换模块设置在透明基板上，从而可以将从透明基板入射的光束转换成电能，从而将透射到显示面板的太阳光转换为电能; 因为太阳能充足，所以可以满足显示面板的需要，可延长显示面板的使用时间。
-
6.发明授权公开(公告)号：US09196631B1
公开(公告)日：2015-11-24
申请号：US14498066
申请日：2014-09-26
发明人： Wenyu Zhang , Zhenyu Xie , Jian Guo
IPC分类号： H01L27/12 , H01L21/027 , H01L29/786 , H01L29/66 , H01L29/06 , G02F1/1368 , G02F1/1362
CPC分类号： H01L27/1288 , G02F1/136286 , G02F1/1368 , H01L27/1222 , H01L27/124 , H01L27/127 , H01L29/0692 , H01L29/66742 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention disclose an array substrate and a method for manufacturing the same, and a display device. The method for manufacturing an array substrate comprising: forming a gate metal layer, wherein the gate metal layer comprises gate lines; film-forming an active layer and film-forming a signal line metal layer, wherein the signal line metal layer comprises data lines; and forming both a pattern of the active layer and a pattern of the signal line metal layer simultaneously using a half-tone mask process, wherein after film-forming the active layer and before film-forming the signal line metal layer, the method further comprising: hollowing out a first region of the active layer through a patterning process, wherein the first region is below the data lines in a display area, and the first region excludes portions of the active layer corresponding to overlapping regions of the data lines and the gate lines.
摘要翻译： 本发明的实施例公开了阵列基板及其制造方法以及显示装置。 一种阵列衬底的制造方法，包括：形成栅极金属层，其中所述栅极金属层包括栅极线; 膜形成有源层和成膜信号线金属层，其中信号线金属层包括数据线; 并且使用半色调掩模工艺同时形成有源层的图案和信号线金属层的图案，其中在膜形成有源层之后并且在成膜信号线金属层之前，该方法还包括 ：通过图案化处理挖空有源层的第一区域，其中第一区域在显示区域内的数据线下方，并且第一区域排除与数据线和栅极的重叠区域相对应的部分有源层 线条。
-
公开(公告)号：US20140125890A1
公开(公告)日：2014-05-08
申请号：US14127051
申请日：2013-02-26
发明人： Zhenyu Xie , Wenyu Zhang , Shaoying Xu , Tiansheng Li , Changjiang Yan
IPC分类号： G02B27/22
CPC分类号： G02B27/2264 , H04N13/332 , H04N13/398
摘要： Embodiments of the present invention provide three-dimensional glasses and a control chip thereof. The three-dimensional glasses comprise: a normal black mode liquid crystal eyeglass; a normal white mode liquid crystal eyeglass; and a control chip, connected to both of the normal black mode liquid crystal eyeglass and the normal white mode liquid crystal eyeglass, wherein a voltage output terminal of the control chip simultaneously supplies a high level or a low level to the normal black mode liquid crystal eyeglass and the normal white mode liquid crystal eyeglass based on a predetermined high and low level switching frequency.
摘要翻译： 本发明的实施例提供三维眼镜及其控制芯片。 三维眼镜包括：正常的黑色液晶眼镜; 正常的白色模式液晶眼镜; 以及连接到普通黑色液晶眼镜和普通白色液晶眼镜两者的控制芯片，其中控制芯片的电压输出端同时向正常的黑色模式液晶提供高电平或低电平 基于预定的高低电平开关频率的眼镜和正常的白色液晶眼镜。
-
公开(公告)号：US09735181B2
公开(公告)日：2017-08-15
申请号：US15238206
申请日：2016-08-16
发明人： Tiansheng Li , Jing Li , Wenyu Zhang
IPC分类号： H01L27/12 , H01L23/535 , H01L21/768 , H01L27/32 , G02F1/1368 , G02F1/1335 , G02F1/1343
CPC分类号： H01L27/124 , G02F1/133514 , G02F1/134309 , G02F1/136227 , G02F1/1368 , G02F2201/123 , H01L21/76895 , H01L23/535 , H01L27/1222 , H01L27/1244 , H01L27/1259 , H01L27/3262 , H01L29/41733
摘要： An array substrate and a method of manufacturing the same, a display panel and a display device are disclosed. The array substrate includes: a base substrate, and a first conductive layer, a first insulation layer, a semiconductor layer, a second conductive layer, a second insulation layer, and a third conductive layer that are sequentially formed on the base substrate. The first conductive layer includes a gate electrode pattern, the semiconductor layer includes an active area pattern, and the second conductive layer includes a source-drain electrode pattern; the second insulation layer is provided with a connection via hole between the third conductive layer and the second conductive layer; and the semiconductor layer further includes a spacing pad pattern in a region where the connection via hole is provided.
-
公开(公告)号：US20170194355A1
公开(公告)日：2017-07-06
申请号：US15238206
申请日：2016-08-16
发明人： Tiansheng Li , Jing Li , Wenyu Zhang
IPC分类号： H01L27/12 , H01L21/768 , H01L27/32 , H01L23/535
CPC分类号： H01L27/124 , G02F1/133514 , G02F1/134309 , G02F1/136227 , G02F1/1368 , G02F2201/123 , H01L21/76895 , H01L23/535 , H01L27/1222 , H01L27/1244 , H01L27/1259 , H01L27/3262 , H01L29/41733
摘要： An array substrate and a method of manufacturing the same, a display panel and a display device are disclosed. The array substrate includes: a base substrate, and a first conductive layer, a first insulation layer, a semiconductor layer, a second conductive layer, a second insulation layer, and a third conductive layer that are sequentially formed on the base substrate. The first conductive layer includes a gate electrode pattern, the semiconductor layer includes an active area pattern, and the second conductive layer includes a source-drain electrode pattern; the second insulation layer is provided with a connection via hole between the third conductive layer and the second conductive layer; and the semiconductor layer further includes a spacing pad pattern in a region where the connection via hole is provided.
-
公开(公告)号：US09620651B2
公开(公告)日：2017-04-11
申请号：US14388634
申请日：2013-12-04
发明人： Wenyu Zhang , Zongmin Tian , Jing Li
IPC分类号： H01L27/12 , H01L29/786 , H01L29/417
CPC分类号： H01L29/78696 , H01L27/1222 , H01L27/1225 , H01L27/1259 , H01L27/127 , H01L29/41733 , H01L29/66742 , H01L29/78618 , H01L29/78642 , H01L29/78663 , H01L29/78669 , H01L29/7869
摘要： A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.017 秒)
