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40 条记录 (耗时 0.021 秒)

    Vapor Phase Epitaxy System
    24.
    发明申请
    Vapor Phase Epitaxy System 审中-公开
    气相外延系统

    公开(公告)号：US20110174213A1

    公开(公告)日：2011-07-21

    申请号：US13121371

    申请日：2009-10-01

    申请人： Joshua Mangum ,  William E. Quinn ,  Eric A. Armour

    发明人： Joshua Mangum ,  William E. Quinn ,  Eric A. Armour

    IPC分类号： C30B25/02 ,  C23C16/455

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode, thereby activating first precursor gas molecules.

    摘要翻译： 气相外延系统包括支撑用于气相外延的衬底的压板和气体注入器。 气体喷射器将第一前体气体注入第一区域并将第二前体气体注入第二区域。 至少一个电极位于第一区域中，使得第一前体气体分子流到电极附近。 至少一个电极定位成与第二前体气体的流动基本隔离。 电源电连接到至少一个电极。 电源产生加热至少一个电极的电流，以便热激活靠近至少一个电极流动的至少一些第一前体气体分子，由此激活第一前体气体分子。

    Chemical vapor deposition with energy input
    27.
    发明申请
    Chemical vapor deposition with energy input 有权
    化学气相沉积与能量输入

    公开(公告)号：US20100087050A1

    公开(公告)日：2010-04-08

    申请号：US12587228

    申请日：2009-10-02

    申请人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    发明人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    IPC分类号： H01L21/363

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

    Gas injection system for chemical vapor deposition using sequenced valves
    29.
    发明授权
    Gas injection system for chemical vapor deposition using sequenced valves 有权
    使用顺序阀进行化学气相沉积的气体注入系统

    公开(公告)号：US09303319B2

    公开(公告)日：2016-04-05

    申请号：US12972270

    申请日：2010-12-17

    申请人： William E. Quinn ,  Eric A. Armour

    发明人： William E. Quinn ,  Eric A. Armour

    IPC分类号： C23C16/455 ,  C23C16/52

    CPC分类号： C23C16/52 ,  C23C16/18 ,  C23C16/45561 ,  C23C16/45574

    摘要： A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.

    摘要翻译： 用于化学气相沉积系统的气体注入系统包括气体歧管，其包括多个阀，其中多个阀中的每一个具有耦合到处理气体源的输入和用于提供处理气体的输出。 多个气体喷射器中的每一个具有耦合到多个阀中的一个的输出端的输入端和位于化学气相沉积反应器的多个区域之一中的输出端。 具有多个输出的控制器，其中所述多个输出中的每一个输出耦合到所述多个阀之一的控制输入。 控制器指示多个阀中的至少一些阀在预定时间打开以向化学气相沉积反应器中的多个区域中的每一个提供期望的气流。

    Chemical vapor deposition with energy input
    30.
    发明授权
    Chemical vapor deposition with energy input 有权
    化学气相沉积与能量输入

    公开(公告)号：US08815709B2

    公开(公告)日：2014-08-26

    申请号：US12587228

    申请日：2009-10-02

    申请人： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

    发明人： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

    IPC分类号： H01L21/20

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。