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21.发明授权Metal-free CVD coating of graphene on glass and other dielectric substrates 有权石墨烯在玻璃和其他电介质基材上无金属CVD涂层公开(公告)号：US09505624B2
公开(公告)日：2016-11-29
申请号：US14182819
申请日：2014-02-18
Applicant: Corning Incorporated
Inventor： Xinyuan Liu , Robert George Manley , Robert Michael Morena , Zhen Song
CPC classification number: C23C16/26 , C01B32/182 , C01B32/186 , C03C17/22 , C03C2217/28 , C03C2218/152 , C04B41/85 , C23C16/0227 , C23C16/44 , Y10T428/24975 , Y10T428/25 , Y10T428/265 , Y10T428/30
Abstract: A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
Abstract translation: 一种用于形成石墨烯的无催化剂CVD方法。 该方法包括将衬底放置在反应室内，将衬底加热至600℃至1100℃之间的温度，并将碳前体引入室中以在衬底的表面上形成石墨烯层。 该方法不使用等离子体或金属催化剂来形成石墨烯。
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公开(公告)号：US09340443B2
公开(公告)日：2016-05-17
申请号：US14047251
申请日：2013-10-07
Applicant: Corning Incorporated
Inventor： Robert Alan Bellman , Dana Craig Bookbinder , Robert George Manley , Prantik Mazumder , Theresa Chang , Jeffrey John Domey , Alan Thomas Stephens, II
CPC classification number: C03B25/025 , B05D1/60 , B32B7/06 , B32B17/06 , C03B35/14 , C03B40/005 , C03C1/00 , C03C17/328 , G02F2001/133302
Abstract: Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract translation: 可以在片材，载体或两者上提供表面改性层和相关的热处理，以控制薄板和载体之间的室温范德华（和/或氢）键合和高温共价键合。 例如，在真空处理，湿法处理和/或超声波清洗处理中，室温粘合被控制为足以将薄片和载体保持在一起。 同时控制高温共价键，以防止在高温加工过程中薄片和载体之间的永久性结合，并且保持足够的粘结以防止在高温加工过程中的分层。
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23.发明授权公开(公告)号：US12232338B2
公开(公告)日：2025-02-18
申请号：US17608291
申请日：2020-05-07
Inventor： Mingqian He , Jin Jang , Xiuling Li , Robert George Manley , Karan Mehrotra , Nikolay Zhelev Zhelev
Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.
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公开(公告)号：US12046481B2
公开(公告)日：2024-07-23
申请号：US17641540
申请日：2020-09-09
Applicant: CORNING INCORPORATED
Inventor： Sean Matthew Garner , Robert George Manley , Rajesh Vaddi
IPC: H01L21/48 , H01L21/306 , H01L21/768 , H01L23/15 , H01L23/538
CPC classification number: H01L21/486 , H01L21/30604 , H01L21/76898 , H01L23/15 , H01L23/5384
Abstract: Embodiments are related to systems and methods for forming vias in a substrate, and more particularly to systems and methods for reducing substrate surface disruption during via formation.
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公开(公告)号：US11795116B2
公开(公告)日：2023-10-24
申请号：US17080906
申请日：2020-10-27
Applicant: CORNING INCORPORATED
Inventor： Michael Edward Badding , Francis Martin Behan , Seo-Yeong Cho , Benedict Yorke Johnson , Thomas Dale Ketcham , Robert George Manley , Seongho Seok , Nikolay Zhelev Zhelev , Cheng-Gang Zhuang
CPC classification number: C04B41/009 , B05D3/007 , C04B41/488 , C04B41/4823 , C04B41/4846 , C04B41/83 , C04B41/89
Abstract: Ceramic assembly can comprise a ceramic article comprising a thickness defined between a first major surface and a second major surface. The thickness can be about 100 micrometers or less. The ceramic assembly can comprise a polymer coating deposited over at least an outer peripheral portion of the first major surface of the ceramic article. The polymer coating can comprise a thickness of about 30 micrometers or less. An edge strength of the ceramic assembly can be greater than an edge strength of the ceramic article by about 50 MegaPascals or more. Methods of forming a ceramic assembly can comprise depositing a polymer coating on an outer peripheral portion of a first major surface of a ceramic article. Methods can further comprise curing the polymer coating.
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Patent Agency Ranking
26.发明公开公开(公告)号：US20230163144A1
公开(公告)日：2023-05-25
申请号：US17990797
申请日：2022-11-21
Applicant: CORNING INCORPORATED
Inventor： Robert George Manley , Nikolay Zhelev Zhelev , Bin Zhu
IPC: H01L27/12 , H01L29/786 , H01L29/66
CPC classification number: H01L27/1274 , H01L27/1218 , H01L27/1222 , H01L27/124 , H01L29/78621 , H01L29/78675 , H01L29/66757
Abstract: A method for making a thin film transistor device includes forming a semiconductor film on a flexible substrate comprising a thin ribbon of refractory material that does not degrade when heated to temperatures greater than about 750° C. The semiconductor film is crystallized by heating the semiconductor film and the flexible substrate to at least about 750° C. A dielectric material is deposited on the crystallized semiconductor film. Gate, source, and drain electrodes are formed on the dielectric material.
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27.发明申请公开(公告)号：US20220209149A1
公开(公告)日：2022-06-30
申请号：US17608291
申请日：2020-05-07
Inventor： Mingqian He , Jin Jang , Xiuling Li , Robert George Manley , Karan Mehrotra , Nikolay Zhelev Zhelev
Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.
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公开(公告)号：US11123954B2
公开(公告)日：2021-09-21
申请号：US15921034
申请日：2018-03-14
Applicant: Corning Incorporated
Inventor： Kaveh Adib , Robert Alan Bellman , Dana Craig Bookbinder , Theresa Chang , Shiwen Liu , Robert George Manley , Prantik Mazumder
Abstract: A method of controllably bonding a thin sheet having a thin sheet bonding surface with a carrier having a carrier bonding surface, by depositing a carbonaceous surface modification layer onto at least one of the thin sheet bonding surface and the carrier bonding surface, incorporating polar groups with the surface modification layer, and then bonding the thin sheet bonding surface to the carrier bonding surface via the surface modification layer. The surface modification layer may include a bulk carbonaceous layer having a first polar group concentration and a surface layer having a second polar group concentration, wherein the second polar group concentration is higher than the first polar group concentration. The surface modification layer deposition and the treatment thereof may be performed by plasma polymerization techniques.
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公开(公告)号：US20210135114A1
公开(公告)日：2021-05-06
申请号：US16471446
申请日：2017-12-19
Applicant: CORNING INCORPORATED
Inventor： Robert George Manley , Karan Mehrotra , Barry James Paddock , Rajesh Vaddi , Nikolay Zhelev Zhelev , Bin Zhu
Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material
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公开(公告)号：US20210132425A1
公开(公告)日：2021-05-06
申请号：US16491900
申请日：2017-10-31
Applicant: CORNING INCORPORATED
Inventor： Idrani Bhattacharyya , Jr-Nan Hu , Tomohiro Ishikawa , Robert George Manley , Jonathan Michael Mis , Vitor Marino Schneider , Dean Michael Thelen , Sujanto Widjaja , Nikolay Zhelev Zhelev
IPC: G02F1/1333 , G02F1/1335 , G02F1/1368
Abstract: Disclosed devices (100) include a liquid crystal layer (140), a cover glass (105), a polarizer (115), and at least one anti-static coating disposed on at least one major surface (105A, 105C) of the cover glass, at least one major surface (115A, 115C) of the polarizer, or both. Methods for reducing mura (light leakage) in a touch-display device by means of this anti-static coating are also disclosed.
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