公开(公告)号：US20140166205A1

公开(公告)日：2014-06-19

申请号：US14111030

申请日：2012-04-06

申请人： Caizhong Tian ,  Toshihisa Nozawa ,  Kazuki Moyama ,  Takahiro Senda ,  Kazuyuki Kato ,  Munetaka Yamagami

发明人： Caizhong Tian ,  Toshihisa Nozawa ,  Kazuki Moyama ,  Takahiro Senda ,  Kazuyuki Kato ,  Munetaka Yamagami

IPC分类号： G01B11/24 ,  H01J37/32

CPC分类号： G01B11/24 ,  G01B11/02 ,  G01B11/06 ,  G01N21/9501 ,  H01J37/32009 ,  H01L21/67253 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process monitoring device 11 includes a light source unit that outputs light; a light detection unit that detects an intensity of light; a first optical path 21 that guides the light outputted from the light source unit to a wafer W and guides reflection light from the wafer W to the light detection unit; a second optical path that has a light propagation characteristic equivalent to that of the first optical path 21 and guides the light outputted from the light source unit to the light detection unit without allowing the light to pass the wafer W; and a controller 17 that corrects intensity information of the light detected by the light detection unit via the first optical path 21 based on intensity information of the light detected by the light detection unit via the second optical path, and analyzes a structure of the wafer W.

摘要翻译： 处理监视装置11包括输出光的光源单元; 光检测单元，其检测光的强度; 第一光路21，其将从光源单元输出的光引导到晶片W，并将来自晶片W的反射光引导到光检测单元; 具有与第一光路21的光传播特性相当的光传播特性的第二光路，并将从光源单元输出的光引导到光检测单元，而不允许光通过晶片W; 以及控制器17，其通过第一光路21基于由光检测单元检测出的光的强度信息经由第二光路校正由光检测单元检测到的光的强度信息，并分析晶片W的结构 。

公开(公告)号：US20090242130A1

公开(公告)日：2009-10-01

申请号：US12095262

申请日：2006-11-15

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： B44C1/22 ,  C23C16/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244

摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.

摘要翻译： 等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减 用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。

公开(公告)号：US07396431B2

公开(公告)日：2008-07-08

申请号：US10953801

申请日：2004-09-30

申请人： Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32211 ,  H01J37/32082 ,  H01J37/32192

摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

摘要翻译： 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US07940009B2

公开(公告)日：2011-05-10

申请号：US12274650

申请日：2008-11-20

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H01B31/26 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.

摘要翻译： 等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分 通过这个顶板。 顶板在其内设有反射构件。 反射部件的侧壁作为反射用于反射在顶板内部沿半径方向传播的高频波的波反射体。 或者，不能以顶板的凹部的侧壁用作波反射器装置的方式设置反射部件。

公开(公告)号：US20060156984A1

公开(公告)日：2006-07-20

申请号：US11288336

申请日：2005-11-29

申请人： Toshihisa Nozawa ,  Kiyotaka Ishibashi ,  Toshio Nakanishi

发明人： Toshihisa Nozawa ,  Kiyotaka Ishibashi ,  Toshio Nakanishi

IPC分类号： C23C16/00 ,  C23C14/00

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J2237/332 ,  H01L21/3065

摘要： To enable suitable plasma processing with reduced damage to a processing target ascribable to plasma generation. In a plasma processing apparatus including at least: a plasma processing chamber in which plasma processing is applied to a processing target; a processing target supporting means for setting the processing target in the plasma processing chamber; and a plasma generating means for generating a plasma in the plasma processing chamber, the present invention uses the plasma generating means that is capable of supplying intermittent energy.

摘要翻译： 为了实现等离子体处理，能够降低对归因于等离子体产生的处理目标的损伤。 一种等离子体处理装置，其至少包括：对处理对象物施加等离子体处理的等离子体处理室; 处理目标支持装置，用于设置等离子体处理室中的处理目标; 以及用于在等离子体处理室中产生等离子体的等离子体产生装置，本发明使用能够提供间歇能量的等离子体产生装置。

公开(公告)号：US20060005769A1

公开(公告)日：2006-01-12

申请号：US10524038

申请日：2003-08-12

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： B05B5/025 ,  C23C16/00 ,  B05C5/02

CPC分类号： H01J37/32458 ,  H01J37/32192

摘要： A plasma processing device comprising a chamber (1), a high-frequency power supply and an antenna unit (3). The antenna unit (3) comprises a slot plate (3c) , a slow wave plate (3b) and an antenna cover (3a) . A top plate unit (4) having a flat plate (4a) and sidewalls (4b) is disposed at the upper portion of the chamber (1). The flat plate (4a) contacts the slot plate (3c) disposed to face a housed substrate (11). The sidewalls (4b) are formed so as to extend toward a substrate-disposed side from the periphery of the flat plate (4a) . The outer periphery surfaces of sidewalls (4b) contact the chamber (1). The thickness of the sidewalls (4b) is set to be at least λg/4, where λg is the wavelength of a microwave based on the permittivity of the top plate (4). Accordingly, a plasma density can be further increased and a uniformity in plasma density distribution can be improved.

摘要翻译： 一种等离子体处理装置，包括室（1），高频电源和天线单元（3）。 天线单元（3）包括槽板（3c），慢波板（3b）和天线罩（3a）。 具有平板（4a）和侧壁（4b）的顶板单元（4）设置在室（1）的上部。 平板（4a）接触与被容纳的基板（11）相对设置的槽板（3c）。 侧壁（4b）形成为从平板（4a）的周边朝向基板设置侧延伸。 侧壁（4b）的外周表面与腔室（1）接触。 侧壁（4b）的厚度被设定为至少λλ/ 4，其中λ是基于顶部介电常数的微波的波长 板（4）。 因此，可以进一步提高等离子体密度，并且可以提高等离子体密度分布的均匀性。

公开(公告)号：US09177846B2

公开(公告)日：2015-11-03

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/513 ,  H01L21/683 ,  C23C16/458 ,  H01L21/687

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US07930992B2

公开(公告)日：2011-04-26

申请号：US10570631

申请日：2004-09-03

申请人： Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32458 ,  H01J37/32192 ,  H01J37/32238

摘要： Resonance can be surely provided under any plasma condition in such a manner that an antenna (3) is arranged in an opening of an upper part of a chamber (1) to produce an electromagnetic field generated by a microwave, a top plate (4) for sealing the opening of the chamber (1) is provided under the antenna (3), a ring-shaped ridge (41) is provided on a lower surface of the top plate (4) such that a thickness thereof in a diameter direction is tapered so as to be varied sequentially. Thus, only one kind of top plate has the same effect as a top plate having various thicknesses, so that absorption efficiency to the plasma can be considerably improved and the plasma can be generated stably over a range from a high pressure to a low pressure.

摘要翻译： 可以在任何等离子体条件下确保提供共振，使得天线（3）布置在室（1）的上部的开口中以产生由微波产生的电磁场，顶板（4） 为了密封室（1）的开口，设置在天线（3）的下方，在顶板（4）的下表面上设置有环状的隆起（41），使得其直径方向的厚度为 逐渐变细，以便顺序变化。 因此，只有一种顶板具有与具有各种厚度的顶板相同的效果，使得能够显着提高对等离子体的吸收效率，并且可以在高压至低压的范围内稳定地产生等离子体。

公开(公告)号：US20100264115A1

公开(公告)日：2010-10-21

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： B23Q1/00 ,  H01L21/3065 ,  H05H1/24 ,  C23C16/513

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。