公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20100178775A1

公开(公告)日：2010-07-15

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/465 ,  C23C16/00 ,  C23C16/511 ,  H01L21/469 ,  C23F1/00 ,  C23F1/08 ,  C23C16/455 ,  B28B1/44

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20100230387A1

公开(公告)日：2010-09-16

申请号：US12308333

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23F1/00 ,  C23C16/455 ,  C23C16/511 ,  B22F3/12 ,  B28B1/00

CPC分类号： B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

摘要： Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

摘要翻译： 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US20100288439A1

公开(公告)日：2010-11-18

申请号：US12675273

申请日：2008-08-21

申请人： Kiyotaka Ishibashi ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Masahiro Okesaku

发明人： Kiyotaka Ishibashi ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Masahiro Okesaku

IPC分类号： H01L21/465 ,  C23C16/50 ,  C23C16/511 ,  C23C16/455 ,  H01L21/46 ,  B26F1/00

CPC分类号： C23C16/45565 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T83/0481

摘要： A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits.

摘要翻译： 被构造为实心部分并且设置在内部可抽真空的等离子体处理室的顶部的开口中的公开的顶板包括在顶板的水平方向上形成的多个气体导管; 以及在顶板的第一表面中敞开的气体喷射孔，第一表面面对等离子体处理室的内部并与多个气体管道气体连通。

公开(公告)号：US20090311869A1

公开(公告)日：2009-12-17

申请号：US12374405

申请日：2007-07-18

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/465 ,  C23C16/455 ,  H05H1/46 ,  B29C65/02

CPC分类号： C23C16/45565 ,  H01J37/3244

摘要： Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate 106 is disposed in a processing chamber 102 of a plasma processing apparatus and is provided with a plurality of gas discharge holes 113a for discharging a plasma excitation gas to generate plasma in the processing chamber 102, wherein an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20. The gas discharge holes 113a are made of ceramics members 113 which are separated from the shower plate 106, and the ceramics members 113 are installed in vertical holes 105 opened in the shower plate 106.

摘要翻译： 提供一种能够更可靠地防止等离子体回流的发生并能够实现有效的等离子体激发的喷淋板。 喷淋板106设置在等离子体处理装置的处理室102中，并且设置有多个用于排出等离子体激发气体以在处理室102中产生等离子体的气体排出孔113a，其中长度 气体排出孔的孔径（长度/孔径）为大于等于20°。排气孔113a由与喷淋板106分离的陶瓷部件113构成，陶瓷部件113为 安装在在淋浴板106上打开的垂直孔105中。

公开(公告)号：US08372200B2

公开(公告)日：2013-02-12

申请号：US12308333

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  C23C16/00 ,  H01L21/3065

CPC分类号： B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

摘要： Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

摘要翻译： 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US20090286405A1

公开(公告)日：2009-11-19

申请号：US12304289

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/00 ,  H01L21/30 ,  B01J19/08

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244

摘要： Provided is a shower plate in which there's no need for a cover plate. The shower plate 105 is disposed in a processing chamber 102 of a plasma processing apparatus, for discharging a plasma excitation gas to generate plasma in the processing chamber 102, and the shower plate 105 includes a horizontal hole 111 for introducing the plasma excitation gas into the shower plate 105 from a gas inlet port 110 of the plasma processing apparatus; and a vertical hole 112 communicating with the horizontal hole 111, wherein the shower plate 105 is formed as a single body.

摘要翻译： 提供了不需要盖板的淋浴板。 喷淋板105设置在等离子体处理装置的处理室102中，用于在处理室102中排出等离子体激发气体以产生等离子体，并且喷淋板105包括用于将等离子体激发气体引入到等离子体激发气体的水平孔111 来自等离子体处理装置的气体入口110的喷淋板105; 以及与水平孔111连通的垂直孔112，其中喷淋板105形成为单体。

公开(公告)号：US20110127075A1

公开(公告)日：2011-06-02

申请号：US12673543

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H05K1/11 ,  H05K3/46 ,  H05K3/36 ,  H05K1/00

CPC分类号： H01L23/5329 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684 ,  H01L21/76897 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH3)nSiO2-n/2)x(SiO2)1-x (where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.

摘要翻译： 包含介电常数（k）为2.5或更小并由通式（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x表示的一种或两种以上的氧化物的绝缘涂膜，其中 n = 1〜3，x＆lt; 1; 1）用于形成层间绝缘膜。 通过旋涂施加的绝缘涂膜是平坦的，没有反射下面的不均匀，并且热处理膜在Ra中的表面粗糙度为1nm以下，P-V值为20nm以下。 包含绝缘涂膜的层间绝缘膜可以具有布线结构和仅通过蚀刻形成的电极，而不需要CMP工艺。

公开(公告)号：US20100101834A1

公开(公告)日：2010-04-29

申请号：US12528667

申请日：2008-02-22

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

IPC分类号： H01B3/22 ,  H01B3/24 ,  B32B37/00

CPC分类号： H01L21/3127 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T156/10 ,  H01L2924/00

摘要： An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.

摘要翻译： 层间绝缘膜可以通过层叠含有Si原子的烃层和含有N原子的碳氟化合物层而制造，其中烃层含有H原子和C原子，其比例为 的C原子数与H原子数（H / C）成为0.8〜1.2。 层间绝缘膜使得可以抑制由热退火引起的漏电流的产生和膜收缩，并且具有低介电常数并且是稳定的。

公开(公告)号：US20110215384A1

公开(公告)日：2011-09-08

申请号：US12673550

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/02255 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76835 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/53295 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/32145 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost.As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0≦x≦1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.

摘要翻译： 在包括浅沟槽元件隔离区域和多层结构的层间绝缘膜的半导体器件的制造工艺中，需要重复使用CMP，但是由于CMP本身是昂贵的，所以重复使用CMP是造成 增加制造成本。 作为用于浅沟槽（ST）元件隔离区域和/或最下层层间绝缘膜的绝缘膜，可以使用可通过旋涂进行涂覆的绝缘涂膜。 绝缘涂膜具有由（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x（其中n = 1至3和0＆nlE; x＆nlE; 1.0）表示的组成，并且具有不同相对介电常数k的膜 通过选择热处理条件形成。 可以通过将绝缘涂膜完全改性为SiO 2膜来形成STI元件隔离区域，而具有小相对介电常数k的层间绝缘膜可以通过将其转换为未完全改性的状态来形成。