摘要:
The present invention relates to the tailoring the reflectivity spectrum of a sampled-grating distributed Bragg reflector (SGDBR) by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (κ) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.
摘要:
A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.
摘要:
Traveling-wave optoelectronic wavelength conversion is provided by a monolithic optoelectronic integrated circuit that includes an interconnected traveling-wave photodetector and traveling-wave optical modulator with a widely tunable laser source. Either parallel and series connections between the photodetector and modulator may be used. An input signal modulated onto a first optical wavelength develops a traveling wave voltage on transmission line electrodes of the traveling-wave photodetector, and this voltage is coupled via an interconnecting transmission line of the same characteristic impedance to transmission line electrodes of the traveling-wave optical modulator to modulate the signal onto a second optical wavelength derived from the tunable laser. The traveling wave voltage is terminated in a load resistor having the same characteristic impedance as the photodetector and modulator transmission lines. However, the interconnecting transmission lines and the load resistor may have different impedances than the photodetector and modulator.
摘要:
Controller calibration methods for use with sampled grating distributed Bragg reflector SGDBR laser (102) is presented. An exemplary method includes conducting a two-dimensional mirror current scam of each front mirror current setting and back mirror current setting for a sampled grating distributed Bragg reflector SGBDR laser(102) to produce laser setting data corresponding to each front mirror current setting and back mirror current setting to generate a reference optical signal (114) of the SGDBR laser (102). A channel operating point is determined for each channel within the two-dimensional scan data. A fix up of the operating point to substantially minimize wavelength and power error can also be performed. A two-dimensional control surface is characterized at the channel operating point for each channel. A lookup table for controlling the SGDBR (102) laser is generated from the operating point currents, locker values and two-dimensional control surface data from each channel.
摘要:
Traveling-wave optoelectronic wavelength conversion is provided by a monolithic optoelectronic integrated circuit that includes an interconnected traveling-wave photodetector and traveling-wave optical modulator with a widely tunable laser source. Either parallel and series connections between the photodetector and modulator may be used. An input signal modulated onto a first optical wavelength develops a traveling wave voltage on transmission line electrodes of the traveling-wave photodetector, and this voltage is coupled via an interconnecting transmission line of the same characteristic impedance to transmission line electrodes of the traveling-wave optical modulator to modulate the signal onto a second optical wavelength derived from the tunable laser. The traveling wave voltage is terminated in a load resistor having the same characteristic impedance as the photodetector and modulator transmission lines. However, the interconnecting transmission lines and the load resistor may have different impedances than the photodetector and modulator.
摘要:
The present invention relates to the tailoring the reflectivity spectrum of a SGDBR by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (κ) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.
摘要:
A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.
摘要:
A system and a method for reducing the temperature in a vertical-cavity surface-emitting laser (VCSEL) comprising of including at least one heat spreading layer adjecent to one of the reflecting surfaces in a VCSEL. The heat spreading layer has high thermal conductivity allowing heat to bypass said one of the reflecting surfaces, thereby efficiently removing the heat away from the device. This also reduces the serial resistance and the thermal impedance of the VCSEL.
摘要:
A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of antimony in the DBR structure allows current to be pumped through the DBRs into an active region to provide for long wavelength, continuous wave operation of the VCSEL.
摘要:
A process for forming a Vertical Cavity Laser (VCL) structure that includes using an intermixing technique involving an high temperature annealing operation to overcome lateral carrier diffusion away from the center of the active region of the VCL. Degrading effects of the high temperature annealing are avoided by first restricting the dopant associated with the p-type Bragg reflector (DBR) region of the VCL to low diffusivity types such as carbon, thus eliminating a thermally-induced diffusion that occurs when other p-type dopants such as beryllium (Be), Zinc (Zn), or Magnesium (Mg) are employed. Further, the oxide created to act as an aperture in a conventional VCL structure is removed leaving behind an air gap having the shape of the oxide aperture. It was found that the degrading effects associated with annealing the VCL structure were minimized using carbon as the p-type dopant and air gap apertures. In addition, it was determined that the annealed, air gap apertured, VCL provided the same optical loss properties previously attributed only to an un-annealed, oxide-apertured, VCL—but without sacrificing efficiency due to lateral carrier diffusion.