公开(公告)号：US09142743B2

公开(公告)日：2015-09-22

申请号：US13196839

申请日：2011-08-02

Applicant: Chih-Wei Chuang ,  Chao-Kun Lin ,  Long Yang ,  Norihito Hamaguchi

Inventor： Chih-Wei Chuang ,  Chao-Kun Lin ,  Long Yang ,  Norihito Hamaguchi

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/00 ,  H01L33/40 ,  H01L23/00

CPC classification number: H01L33/62 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/405 ,  H01L2224/05624 ,  H01L2224/29118 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/0665 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.

Abstract translation: 通过在硅晶片上生长外延LED结构来制造垂直GaN基LED。 添加银层并退火以承受> 450℃的温度。 提供了在> 450℃有效5分钟的阻挡层（例如Ni / Ti），以防止粘结金属扩散到银中。 然后，所得到的器件晶片结构使用在> 380℃熔化的高温接合金属（例如，AlGe）将晶片结合到载体晶片结构。在晶片接合之后，去除硅，无金电极（例如，Al ），并且结构被分割。 与电极金属相容的高温焊料（例如ZnAl）用于管芯附着。 芯片附着在> 380°C下发生十秒，而不熔化粘结金属或以其他方式损坏器件。 整个LED不含金，因此可在大容量无金属半导体制造设备中制造。

公开(公告)号：US08895332B2

公开(公告)日：2014-11-25

申请号：US12701336

申请日：2010-02-05

Applicant: Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

Inventor： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/44

Abstract: This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

Abstract translation: 本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及 一对用于向外延层结构提供电源的电极。 外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。 因此外延层结构产生的光被有效地抽出。 形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。 朝向基板的光更有效地向上反射。 因此光提取和亮度增强。 还提供了用于制造本发明的发光二极管芯片的方法。

公开(公告)号：US20140054640A1

公开(公告)日：2014-02-27

申请号：US13967982

申请日：2013-08-15

Applicant: Chih-Wei Chuang ,  Chao-Kun Lin

Inventor： Chih-Wei Chuang ,  Chao-Kun Lin

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

Abstract translation: LED器件包括条形电极，条状电流阻挡结构和多个分布电流阻挡结构。 电流阻挡结构由诸如二氧化硅的绝缘材料形成。 带状电流阻挡结构位于条形电极的正下方。 多个电流阻挡结构可以是与带状电流阻挡结构相邻的行设置的盘形部分。 电流阻挡结构的分布使得防止电流集中在紧邻电极的区域中，从而促进均匀的电流流入有源层并且促进在不在电极下方的区域中均匀的光产生。 在另一方面，通过损害p-GaN层的区域以形成电阻区域来产生电流阻挡结构。 在另一方面，通过蚀刻掉高度掺杂的接触区域以形成导电层之间的电阻接触区域来产生电流阻挡结构。

公开(公告)号：US08637891B2

公开(公告)日：2014-01-28

申请号：US12472809

申请日：2009-05-27

Applicant: Steven D. Lester ,  Chao-Kun Lin

Inventor： Steven D. Lester ,  Chao-Kun Lin

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/64

Abstract: A light-emitting device includes first and second semiconductor layers and a light-emitting layer between the first and second semiconductor layers. The light-emitting device also includes an improved electrode structures.

Abstract translation: 发光器件包括第一和第二半导体层以及第一和第二半导体层之间的发光层。 发光装置还包括改进的电极结构。

公开(公告)号：US20130328093A1

公开(公告)日：2013-12-12

申请号：US13965799

申请日：2013-08-13

Applicant: Chao-Kun Lin

Inventor： Chao-Kun Lin

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Abstract translation: 薄膜发光二极管包括绝缘基板，形成电流扩散层的绝缘基板上的反射金属电极和电极上的外延结构。

公开(公告)号：US08168984B2

公开(公告)日：2012-05-01

申请号：US13033533

申请日：2011-02-23

Applicant: Chao-Kun Lin ,  Heng Liu

Inventor： Chao-Kun Lin ,  Heng Liu

IPC: H01L31/0256

CPC classification number: H01L33/36 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure. The epitaxial layer structure includes a transparent ohmic contact layer having a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed. The epitaxial layer structure includes a p-type epitaxial layer and a n-type epitaxial layer, wherein the n-type epitaxial layer is coupled between the first electrode and the p-type epitaxial layer, and the p-type epitaxial layer is between the second electrode and the n-type epitaxial layer. The first electrode is located on the n-type epitaxial layer.

Abstract translation: 一种发光二极管，包括外延层结构，第一电极和第二电极。 第一和第二电极设置在外延层结构的一侧上。 外延层结构包括在形成第二电极的表面处具有小于约3nm的均方根（RMS）粗糙度的透明欧姆接触层。 外延层结构包括p型外延层和n型外延层，其中n型外延层耦合在第一电极和p型外延层之间，p型外延层位于 第二电极和n型外延层。 第一电极位于n型外延层上。

公开(公告)号：US08163578B2

公开(公告)日：2012-04-24

申请号：US12834747

申请日：2010-07-12

Applicant: Chao-Kun Lin ,  Heng Liu

Inventor： Chao-Kun Lin ,  Heng Liu

IPC: H01L21/00

CPC classification number: H01L33/36 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.

Abstract translation: 一种发光二极管，包括外延层结构，第一电极和第二电极。 第一和第二电极分别设置在外延层结构上，外延层结构在形成第一电极的表面处具有小于约3的均方根（RMS）粗糙度。

公开(公告)号：US20120012864A1

公开(公告)日：2012-01-19

申请号：US12836140

申请日：2010-07-14

Applicant: Suning Xie ,  Jianhua Li ,  Chao-Kun Lin

Inventor： Suning Xie ,  Jianhua Li ,  Chao-Kun Lin

IPC: H01L33/58

CPC classification number: H01L33/507 ,  H01L25/0753 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light source includes a substrate, a light emitting diode on the substrate within a cavity, a plate over the cavity, a phosphor layer on the plate, and a color filter on the plate between the phosphor layer and the cavity.

Abstract translation: 光源包括衬底，腔内的衬底上的发光二极管，腔上的板，板上的磷光体层，以及荧光体层和腔之间的板上的滤色器。

公开(公告)号：US20100059765A1

公开(公告)日：2010-03-11

申请号：US12472809

申请日：2009-05-27

Applicant: Steven D. Lester ,  Chao-Kun Lin

Inventor： Steven D. Lester ,  Chao-Kun Lin

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/64

Abstract: A light-emitting device includes first and second semiconductor layers and a light-emitting layer between the first and second semiconductor layers. The light-emitting device also includes an improved electrode structures.

Abstract translation: 发光器件包括第一和第二半导体层以及第一和第二半导体层之间的发光层。 发光装置还包括改进的电极结构。

公开(公告)号：US20090078952A1

公开(公告)日：2009-03-26

申请号：US12047165

申请日：2008-03-12

Applicant: Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

Inventor： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/46

Abstract: This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.

Abstract translation: 本发明提供了一种具有高导热性的发光芯片器件，其包括外延芯片，设置在外延芯片的顶表面上的电极和与电极配合的U形电极基底，以向外延芯片提供电能 用于通过电光效应产生光。 外延芯片包括具有粗糙化顶表面和粗糙化底表面的衬底和外延层结构，用于改善从外延芯片中提取的光。 在衬底和外延层结构之间形成导热透明反射层。 电极基体围绕基板，透明反射层和外延层结构的第一包层，以便于当外延芯片发光时产生的内部废热的耗散。 提供了本发明的芯片装置的制造方法。