公开(公告)号：US20200020825A1

公开(公告)日：2020-01-16

申请号：US16447050

申请日：2019-06-20

Applicant: Long Yang ,  Chao-Kun Lin

Inventor： Long Yang ,  Chao-Kun Lin

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/16 ,  H01L33/62 ,  H01L33/40 ,  H01L33/30

Abstract: Embodiments generally relate to micro-device arrays. In some embodiments, an array comprises a substrate and a plurality of micro-devices. Each micro-device is suspended over a cavity in the substrate by at least one lateral hinge attached to a side post formed into the substrate. Each micro-device comprises a bonding layer; a metal contact; semiconductor device layers; and a buffer layer. The semiconductor device layers may comprise GaN-based LED layers; wherein the buffer layer comprises AlGaN; and wherein the substrate comprises (111) oriented Silicon. In other cases, the semiconductor device layers may comprise InGaAsP-based LED layers; wherein the buffer layer comprises InGaP; and wherein the substrate comprises GaAs.

公开(公告)号：US09012921B2

公开(公告)日：2015-04-21

申请号：US13249184

申请日：2011-09-29

Applicant: Chao-Kun Lin ,  Li Yan ,  Chih-Wei Chuang

Inventor： Chao-Kun Lin ,  Li Yan ,  Chih-Wei Chuang

IPC: H01L33/32 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L2924/00 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.

Abstract translation: 发光器件包括n型半导体材料的第一层，p型半导体材料的第二层和在第一层和第二层之间的有源层。 光耦合层设置成与第一层和第二层中的一个相邻。 在一些情况下，通过使发光器件的缓冲层粗糙化来形成光耦合层。 发光器件包括通过光耦合层的一部分与第一层和第二层之一电连通的电极。

公开(公告)号：US08564010B2

公开(公告)日：2013-10-22

申请号：US13198664

申请日：2011-08-04

Applicant: Chih-Wei Chuang ,  Chao-Kun Lin

Inventor： Chih-Wei Chuang ,  Chao-Kun Lin

IPC: H01L33/14 ,  H01L33/38

CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

公开(公告)号：US20120267665A1

公开(公告)日：2012-10-25

申请号：US13532749

申请日：2012-06-25

Applicant: Chao-Kun Lin

Inventor： Chao-Kun Lin

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Abstract translation: 薄膜发光二极管包括绝缘基板，形成电流扩散层的绝缘基板上的反射金属电极和电极上的外延结构。

公开(公告)号：US20100136728A1

公开(公告)日：2010-06-03

申请号：US12701336

申请日：2010-02-05

Applicant: Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

Inventor： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

IPC: H01L33/46 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/44

Abstract: This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

Abstract translation: 本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及 一对用于向外延层结构提供电源的电极。 外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。 因此外延层结构产生的光被有效地抽出。 形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。 朝向基板的光更有效地向上反射。 因此光提取和亮度增强。 还提供了用于制造本发明的发光二极管芯片的方法。

公开(公告)号：US20060182399A1

公开(公告)日：2006-08-17

申请号：US11060338

申请日：2005-02-17

Applicant: Chao-Kun Lin ,  Kostadin Djordjev ,  Michael Tan

Inventor： Chao-Kun Lin ,  Kostadin Djordjev ,  Michael Tan

IPC: G02B6/10

CPC classification number: G02B6/122 ,  G02B2006/12104 ,  G02B2006/12119

Abstract: In one embodiment, there is disclosed a waveguide medium using total internal reflection to create a relatively sharp (approximately 90°) bend for optical signals traversing the waveguide. A discontinuity of the medium (such as air) is used to create a turning mirror within the waveguide path. By curving the discontinuity, the entire input optical signal is focused into the output portion of the waveguide, thereby compensating for the diffraction loss of the optical signal at the bend. In one embodiment in order to facilitate proper alignment of the masks certain portions of the waveguide on a first mask are extended (widened) beyond their optimum physical size. This extended portion is then used to position an edge of a second mask, such that optical signal scatter caused by the extended portions of the waveguide are compensated for by adjusting the curvature.

Abstract translation: 在一个实施例中，公开了使用全内反射以对穿过波导的光信号产生相对尖锐（大约90°）弯曲的波导介质。 介质（如空气）的不连续性用于在波导路径内产生转向镜。 通过弯曲不连续性，整个输入光信号被聚焦到波导的输出部分，从而补偿弯曲处的光信号的衍射损耗。 在一个实施例中，为了促进掩模的正确对准，第一掩模上的波导的某些部分被延伸（加宽）超过其最佳物理尺寸。 然后，该扩展部分用于定位第二掩模的边缘，使得由波导的延伸部分引起的光信号散射通过调整曲率来补偿。

公开(公告)号：US20060056760A1

公开(公告)日：2006-03-16

申请号：US10944372

申请日：2004-09-16

Applicant: Kostadin Djordjev ,  Michael Tan ,  Chao-Kun Lin ,  Scott Corzine

Inventor： Kostadin Djordjev ,  Michael Tan ,  Chao-Kun Lin ,  Scott Corzine

IPC: G02B6/26

CPC classification number: G02B6/12007 ,  G02B2006/12078 ,  G02B2006/12126 ,  G02B2006/12142

Abstract: A light modulator having a waveguide and a resonator is disclosed. The waveguide routes light of wavelength λ past the resonator. The resonator is coupled to the waveguide such that a portion of the light is input to the resonator, the resonator having a resonance at λ. The resonator includes a gain region in which light of wavelength λ is amplified and an absorption region in which light of wavelength λ is absorbed, the absorption region having first and second states, the first state absorbing less light of wavelength λ than the second state, the state of the absorption region is determined by an electrical signal coupled to the absorption region. The gain region provides a gain that compensates for the light absorption in the first state. In one embodiment, the waveguide and resonator are critically coupled when the absorption region is in the second state.

公开(公告)号：US08536601B2

公开(公告)日：2013-09-17

申请号：US12835632

申请日：2010-07-13

Applicant: Chao-Kun Lin

Inventor： Chao-Kun Lin

IPC: H01L33/00

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

Abstract translation: 薄膜LED包括绝缘基板，绝缘基板上的电极和电极上的外延结构。

公开(公告)号：US20130032846A1

公开(公告)日：2013-02-07

申请号：US13196870

申请日：2011-08-02

Applicant: Chao-Kun Lin

Inventor： Chao-Kun Lin

IPC: H01L33/40 ,  B82Y40/00 ,  B82Y99/00

CPC classification number: H01L33/62 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/40 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/0655 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A eutectic metal layer (e.g., gold/tin) bonds a carrier wafer structure to a device wafer structure. In one example, the device wafer structure includes a silicon substrate upon which an epitaxial LED structure is disposed. A layer of silver is disposed on the epitaxial LED structure. The carrier wafer structure includes a conductive silicon substrate covered with an adhesion layer. A layer of non-reactive barrier metal (e.g., titanium) is provided between the silver layer and the eutectic metal to prevent metal from the eutectic layer (e.g., tin) from diffusing into the silver during wafer bonding. During wafer bonding, the wafer structures are pressed together and maintained at more than 280° C. for more than one minute. Use of the non-reactive barrier metal layer allows the total amount of expensive platinum used in the manufacture of a vertical blue LED manufactured on silicon to be reduced, thereby reducing LED manufacturing cost.

Abstract translation: 共晶金属层（例如，金/锡）将载体晶片结构结合到器件晶片结构。 在一个示例中，器件晶片结构包括其上设置有外延LED结构的硅衬底。 一层银布置在外延LED结构上。 载体晶片结构包括被粘合层覆盖的导电硅基板。 在银层和共晶金属之间提供一层非反应性阻挡金属（例如钛），以防止晶片接合期间来自共晶层（例如锡）的金属扩散到银中。 在晶片接合期间，将晶片结构压在一起并保持在280℃以上超过一分钟。 使用非反应性阻挡金属层允许在制造在硅上制造的垂直蓝色LED中使用的昂贵的铂的总量减少，从而降低LED制造成本。

公开(公告)号：US07858999B2

公开(公告)日：2010-12-28

申请号：US12047165

申请日：2008-03-12

Applicant: Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

Inventor： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

IPC: H01L29/22

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/46

Abstract: This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.

Abstract translation: 本发明提供了一种具有高导热性的发光芯片器件，其包括外延芯片，设置在外延芯片的顶表面上的电极和与电极配合的U形电极基底，以向外延芯片提供电能 用于通过电光效应产生光。 外延芯片包括具有粗糙化顶表面和粗糙化底表面的衬底和外延层结构，用于改善从外延芯片中提取的光。 在衬底和外延层结构之间形成导热透明反射层。 电极基体围绕基板，透明反射层和外延层结构的第一包层，以便于当外延芯片发光时产生的内部废热的耗散。 提供了本发明的芯片装置的制造方法。