Strained channel transistor and methods of manufacture
    23.
    发明授权
    Strained channel transistor and methods of manufacture 有权
    应变通道晶体管及其制造方法

    公开(公告)号:US07052964B2

    公开(公告)日:2006-05-30

    申请号:US11081919

    申请日:2005-03-16

    IPC分类号: H01L21/336

    摘要: A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.

    摘要翻译: 半导体器件包括其中形成有第一和第二隔离沟槽的半导体材料区域。 第一隔离槽衬有具有低氧扩散速率的第一材料并填充绝缘材料。 第二隔离槽不是衬有第一材料,而是用绝缘材料填充。 形成在第一隔离区域附近的第一晶体管和与第二隔离区域相邻形成的第二晶体管。

    Strained channel complementary field-effect transistors and methods of manufacture
    27.
    发明申请
    Strained channel complementary field-effect transistors and methods of manufacture 有权
    应变通道互补场效应晶体管及其制造方法

    公开(公告)号:US20050035470A1

    公开(公告)日:2005-02-17

    申请号:US10639170

    申请日:2003-08-12

    IPC分类号: H01L21/8238 H01L27/088

    摘要: A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.

    摘要翻译: 晶体管包括覆盖沟道区的栅极电介质。 源极区域和漏极区域位于沟道区域的相对侧上。 沟道区由第一半导体材料形成,源极和漏极区由第二半导体材料形成。 栅极电极覆盖栅极电介质。 在栅电极的侧壁上形成一对间隔物。 每个间隔件包括邻近通道区域的空隙。 高应力膜可以覆盖栅电极和间隔物。