公开(公告)号：US06448655B1

公开(公告)日：2002-09-10

申请号：US09067439

申请日：1998-04-28

申请人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

发明人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

IPC分类号： H01L2348

CPC分类号： H01L21/76825 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

摘要翻译： 描述了在含氟电介质中提供基本上较低氟含量的区域的方法，其包括将区域暴露于紫外线辐射并在升高的温度下退火以从该区域去除部分被破坏的氟。 本发明克服了与含氟介质与其他材料反应的氟的问题，同时保持足够高或原始氟含量的体电介质材料，以保持半导体芯片布线互连结构中有效的低介电常数。

公开(公告)号：US08895352B2

公开(公告)日：2014-11-25

申请号：US12476676

申请日：2009-06-02

申请人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

发明人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

IPC分类号： H01L51/40 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/02532 ,  H01L21/02376 ,  H01L21/0262 ,  H01L21/02664 ,  H01L29/66742 ,  H01L29/78684 ,  H01L29/78687

摘要： Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.

摘要翻译： 提供了在碳基材料上形成材料的薄涂层的技术。 一方面，提供了在碳系材料的表面上形成薄涂层的方法。 该方法包括以下步骤。 在碳基材料的表面的至少一部分上沉积超薄硅成核层至约2埃至约10埃的厚度，以促进碳基材料表面上的涂层的成核。 在超薄硅层上沉积厚度为约2埃至约100埃的薄涂层，以在碳基材料的表面上形成薄涂层。

公开(公告)号：US08816333B2

公开(公告)日：2014-08-26

申请号：US13482262

申请日：2012-05-29

申请人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

发明人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

IPC分类号： H01L51/00

CPC分类号： H01L21/02532 ,  H01L21/02376 ,  H01L21/0262 ,  H01L21/02664 ,  H01L29/66742 ,  H01L29/78684 ,  H01L29/78687

摘要： Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.

公开(公告)号：US08415677B2

公开(公告)日：2013-04-09

申请号：US12690178

申请日：2010-01-20

申请人： Praneet Adusumilli ,  Alessandro Callegari ,  Josephine B. Chang ,  Changhwan Choi ,  Martin Michael Frank ,  Michael A. Guillorn ,  Vijay Narayanan

发明人： Praneet Adusumilli ,  Alessandro Callegari ,  Josephine B. Chang ,  Changhwan Choi ,  Martin Michael Frank ,  Michael A. Guillorn ,  Vijay Narayanan

IPC分类号： H01L29/04

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L29/513

摘要： A field effect transistor device and method which includes a semiconductor substrate, a dielectric gate layer, preferably a high dielectric constant gate layer, overlaying the semiconductor substrate and an electrically conductive oxygen barrier layer overlaying the gate dielectric layer. In one embodiment, there is a conductive layer between the gate dielectric layer and the oxygen barrier layer. In another embodiment, there is a low resistivity metal layer on the oxygen barrier layer.

摘要翻译： 一种场效应晶体管器件和方法，其包括覆盖半导体衬底的半导体衬底，介电栅极层，优选高介电常数栅极层和覆盖栅极电介质层的导电氧阻挡层。 在一个实施例中，在栅介质层和氧阻挡层之间存在导电层。 在另一个实施例中，在氧阻隔层上存在低电阻率金属层。

公开(公告)号：US20110175147A1

公开(公告)日：2011-07-21

申请号：US12690178

申请日：2010-01-20

申请人： Praneet Adusumilli ,  Alessandro Callegari ,  Josephine B. Chang ,  Changhwan Choi ,  Martin M. Frank ,  Michael A. Guillorn ,  Vijay Narayanan

发明人： Praneet Adusumilli ,  Alessandro Callegari ,  Josephine B. Chang ,  Changhwan Choi ,  Martin M. Frank ,  Michael A. Guillorn ,  Vijay Narayanan

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L29/513

摘要： A field effect transistor device and method which includes a semiconductor substrate, a dielectric gate layer, preferably a high dielectric constant gate layer, overlaying the semiconductor substrate and an electrically conductive oxygen barrier layer overlaying the gate dielectric layer. In one embodiment, there is a conductive layer between the gate dielectric layer and the oxygen barrier layer. In another embodiment, there is a low resistivity metal layer on the oxygen barrier layer.

摘要翻译： 一种场效应晶体管器件和方法，其包括覆盖半导体衬底的半导体衬底，介电栅极层，优选高介电常数栅极层和覆盖栅极电介质层的导电氧阻挡层。 在一个实施例中，在栅介质层和氧阻挡层之间存在导电层。 在另一个实施例中，在氧阻隔层上存在低电阻率金属层。

公开(公告)号：US06759321B2

公开(公告)日：2004-07-06

申请号：US10205526

申请日：2002-07-25

申请人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

发明人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

IPC分类号： H01L214763

CPC分类号： H01L21/76825 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

摘要翻译： 描述了在含氟电介质中提供基本上较低氟含量的区域的方法，其包括将区域暴露于紫外线辐射并在升高的温度下退火以从该区域去除部分被破坏的氟。 本发明克服了与含氟介质与其他材料反应的氟的问题，同时保持足够高或原始氟含量的体电介质材料，以保持半导体芯片布线互连结构中有效的低介电常数。

公开(公告)号：US20120235119A1

公开(公告)日：2012-09-20

申请号：US13482262

申请日：2012-05-29

申请人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

发明人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

IPC分类号： H01L29/775 ,  H01L29/04

CPC分类号： H01L21/02532 ,  H01L21/02376 ,  H01L21/0262 ,  H01L21/02664 ,  H01L29/66742 ,  H01L29/78684 ,  H01L29/78687

摘要： Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.

摘要翻译： 提供了在碳基材料上形成材料的薄涂层的技术。 一方面，提供了在碳系材料的表面上形成薄涂层的方法。 该方法包括以下步骤。 在碳基材料的表面的至少一部分上沉积超薄硅成核层至约2埃至约10埃的厚度，以促进碳基材料表面上的涂层的成核。 在超薄硅层上沉积厚度为约2埃至约100埃的薄涂层，以在碳基材料的表面上形成薄涂层。

公开(公告)号：US20100301336A1

公开(公告)日：2010-12-02

申请号：US12476676

申请日：2009-06-02

申请人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

发明人： Katherina Babich ,  Alessandro Callegari ,  Zhihong Chen ,  Edward Kiewra ,  Yanning Sun

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L29/04

CPC分类号： H01L21/02532 ,  H01L21/02376 ,  H01L21/0262 ,  H01L21/02664 ,  H01L29/66742 ,  H01L29/78684 ,  H01L29/78687

摘要： Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.

摘要翻译： 提供了在碳基材料上形成材料的薄涂层的技术。 一方面，提供了在碳系材料的表面上形成薄涂层的方法。 该方法包括以下步骤。 在碳基材料的表面的至少一部分上沉积超薄硅成核层至约2埃至约10埃的厚度，以促进碳基材料表面上的涂层的成核。 在超薄硅层上沉积厚度为约2埃至约100埃的薄涂层，以在碳基材料的表面上形成薄涂层。

公开(公告)号：US20070284698A1

公开(公告)日：2007-12-13

申请号：US11693409

申请日：2007-03-29

申请人： Alessandro Callegari ,  Stephen Cohen ,  Fuad Doany

发明人： Alessandro Callegari ,  Stephen Cohen ,  Fuad Doany

IPC分类号： H01L23/29

CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

摘要翻译： 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深超极化的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其不会不利地影响（增加）SiCOH介电膜的介电常数。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

公开(公告)号：US20070138563A1

公开(公告)日：2007-06-21

申请号：US11303715

申请日：2005-12-16

申请人： Alessandro Callegari ,  Michael Chudzik ,  Bruce Doris ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Michelle Steen

发明人： Alessandro Callegari ,  Michael Chudzik ,  Bruce Doris ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Michelle Steen

IPC分类号： H01L29/78 ,  H01L21/8238

CPC分类号： H01L21/823842

摘要： A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.

摘要翻译： 包括至少一个n型场效应晶体管（nFET）和至少一个p型场效应晶体管（pFET）的半导体结构，其分别包括具有nFET行为的金属栅极和pFET行为，而不包括上多晶硅栅极 提供电极。 本发明还提供一种制造这种半导体结构的方法。