Abstract:
A semiconductor device is provided with a gate electrode having a substantially rectangular profile by depositing a layer of amorphous or microcrystalline silicon. The amorphous or microcrystalline silicon is doped with impurities, before patterning to form the gate electrode, to reduce gate depletion. The doped gate electrode layer is then patterned to form a gate electrode having a substantially rectangular profile.
Abstract:
A wheel holder assembly and main shaft arrangement includes a main shaft made of a triangular section bar and having an upper bag cradle and a lower bag cradle for holding a golf bag, and a wheel holder assembly mounted on the main shaft to hold a pair of wheels, the wheel holder assembly including a mounting frame fastened to the main shaft, two wheel frames each holding a wheel, two pairs of legs respectively coupled between the mounting frame and the wheel frames at two opposite sides of the main shaft, and two links respectively pivotably connected between the legs and the upper bag cradle, the mounting frame having a hollow frame base with a triangular inner diameter sleeved onto the main shaft and fixedly secured thereto by fastening means and two substantially U-shaped coupling plates integral with the hollow frame base at two opposite sides, the main shaft having a first sloping side wall and a second sloping side wall joined at the top and a bottom side wall connected between the first sloping side wall and the second sloping side wall at the bottom; the U-shaped coupling plates of the mounting frame each having two parallel walls closely attached to the top ends of the legs at top and bottom sides and respectively supported on the sloping side walls of the main shaft.
Abstract:
A type of automatic cutter rotating mechanism for wire forming machine, on the circumference of the rotating spindle of said wire forming machine is fitted with a rotating unit; said rotating unit can be driven by a first servo motor via a transmission mechanism; there is another second servo motor that will drive the rotating spindle to rotate via the transmission mechanism; on the machine body and the rotating unit are several sets of forming units; each of the forming units having a third servo motor; said third servo motor can drive a cam to rotate via the transmission mechanism; said cam has a cam groove; on the machine body is fitted with a first rail; on the first rail is a transmission unit; on the transmission unit is a first roller; the first roller is located in the cam groove of the cam; the forming unit has a second rail; said second rail is fitted on the transmission unit; on the second rail is a cutter unit; on the cutter unit is fixed a forming cutter; the cutter unit has a second roller; said second roller is located in an arched groove on the transmission unit; with such a configuration, the wire forming machine will not be restricted in its applications, and will be more convenient in operation.
Abstract:
A method is provided for transmitting an email message from a sender to a recipient, the recipient capable of receiving email messages compliant with American Standard Code for Information Interchange (ASCII). However, one or more of the sender or other recipients have a non-ASCII email address. Accordingly, mapped ASCII email addresses are created for each of the non-ASCII email addresses. A username is generated as a mapping of the non-ASCII email address using a predefined mapping algorithm. A domain name is selected from one or more predefined domain names. The username is concatenated with the domain name to create the mapped ASCII email address. Then, the non-ASCII email address is replaced with the mapped ASCII email address and the email message is sent to the selected recipient.
Abstract:
A method is provided for transmitting an email message from a sender to a selected recipient, the selected recipient capable of receiving only email messages compliant with American Standard Code for Information Interchange (ASCII). However, one or more of the sender or other recipients have a non-ASCII email address. Accordingly, mapped ASCII email addresses are created for each of the non-ASCII email addresses as follows. A username is generated as a mapping of the non-ASCII email address using a predefined mapping algorithm. A domain name is selected from one or more predefined domain names, each of the domain names configured to resolve to a predefined gateway server. The username is concatenated with the domain name to create the mapped ASCII email address. Then, the non-ASCII email addresses is replaced with the mapped ASCII email address and the email message is sent to the selected recipient. A gateway server and computer-readable medium configured to implement the method described above are also provided.
Abstract:
An integrated circuit system includes an integrated circuit, forming a triode near the integrated circuit, and attaching a connector to the triode and the integrated circuit.
Abstract:
A system and a method of ensuring correct execution of a laboratory protocol or procedure are provided. An embodiment of the disclosure records videos of a bench area with a monitoring device, processes and stores the recorded video, and allows users to review the video. By reviewing the video of the lab procedure while conducting the laboratory protocol or procedure or shortly thereafter, users can resolve doubts and problems about particular steps of the lab procedure and conduct the procedure correctly.
Abstract:
The halo implant technique described herein employs a halo implant mask that creates a halo implant shadowing effect during halo dopant bombardment. A first transistor device structure and a second transistor device structure are formed on a wafer such that they are orthogonally oriented to each other. A common halo implant mask is created with features that prevent halo implantation of the diffusion region of the second transistor device structure during halo implantation of the diffusion region of the first transistor device structure, and with features that prevent halo implantation of the diffusion region of the first transistor device structure during halo implantation of the diffusion region of the second transistor device structure. The orthogonal orientation of the transistor device structures and the pattern of the halo implant mask obviates the need to create multiple implant masks to achieve different threshold voltages for the transistor device structures.
Abstract:
A method of forming a silicon-on-insulator semiconductor device including providing a substrate, forming an insulating layer on the substrate, forming a process layer on the insulating layer, implanting ions into the process layer adjacent the insulating layer, and forming a strained silicon layer over the process layer. Implanting ions into the process layer adjacent the insulating layer reduces floating body effects of the semiconductor device, while the strained silicon layer covers surface defects form by the implanted ions in the process layer to enhance mobility of the semiconductor device.