摘要:
A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.
摘要:
An array substrate for a display panel includes a base substrate, a signal-applying module, a first electrode, a second electrode, and a protective layer. The signal-applying module is disposed on the base substrate and includes an output terminal to output a data signal. The first electrode is disposed on the base substrate and electrically connected to the output terminal. The second electrode includes silver (Ag), and is disposed on and electrically connected to the first electrode. The protective layer is disposed on the second electrode to cover a portion of the second electrode. Thus, adhesion of the second electrode to a lower layer may be improved, and yellowishness of the second electrode may be prevented.
摘要:
A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
摘要:
A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
摘要:
A display substrate includes a base substrate, a first metal pattern, a gate insulating layer, a second metal pattern, a channel layer and a pixel electrode. The first metal pattern is formed on the base substrate, and includes a gate line and a gate electrode of a switching element. The gate insulating layer is formed on the base substrate including the first metal pattern. The second metal pattern is formed on the gate insulating layer, and includes a source electrode, a drain electrode and a source line. The channel layer is formed under the second metal pattern, and is patterned to have substantially the same side surface as a side surface of the second metal pattern. The pixel electrode is electrically connected to the drain electrode. Therefore, an afterimage on a display panel, thus improving display quality.
摘要:
In one embodiment, a thin film transistor array display panel and method of manufacturing the same are provided. A method includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact layer on the gate line; forming a data layer on the ohmic contact layer; forming a photosensitive pattern on the data layer; etching the data layer to form a data line including a source electrode and a drain electrode that is opposite to the source electrode; reflowing the photosensitive pattern to cover side surfaces of the source electrode and the drain electrode; and etching the ohmic contact layer using the reflowed photosensitive pattern as a mask.
摘要:
A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
摘要:
With a metal pattern formation process and a method of manufacturing a thin film transistor array panel using the metal pattern formation process, an organometallic layer is formed by coating an organometallic complex containing metal. The organometallic layer is exposed to light through a photo mask, and developed to form a metal pattern.
摘要:
A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
摘要:
An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.