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    Pitch reduced patterns relative to photolithography features
    21.
    发明申请
    Pitch reduced patterns relative to photolithography features 有权
    相对于光刻特征的间距减小

    公开(公告)号：US20060211260A1

    公开(公告)日：2006-09-21

    申请号：US11214544

    申请日：2005-08-29

    申请人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

    发明人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

    摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

    摘要翻译： 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳，留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

    Wafer cleaning method and resulting wafer
    24.
    发明申请
    Wafer cleaning method and resulting wafer 失效
    晶圆清洗方法和晶圆

    公开(公告)号：US20050040443A1

    公开(公告)日：2005-02-24

    申请号：US10927612

    申请日：2004-08-25

    申请人： Michael Andreas ,  Paul Morgan

    发明人： Michael Andreas ,  Paul Morgan

    IPC分类号： H01L23/544 ,  H01L23/58

    CPC分类号： H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10S438/975 ,  H01L2924/00

    摘要： A method of removing organic particles from a registration mark on a semiconductor wafer. The method comprises providing a semiconductor wafer comprising at least one registration mark at least partially filled with organic particles. The at least one registration mark has a trench width from approximately 1.0 μm to approximately 3.0 μm. The semiconductor wafer is exposed to a cleaning solution comprising tetramethylammonium hydroxide and at least one surfactant, such as an acetylenic diol surfactant. The semiconductor wafer is exposed to an ultrasonic or megasonic vibrational energy. A semiconductor wafer previously subjected to a chemical mechanical planarization treatment and having a reduced amount of organic particles in a registration mark is also disclosed.

    摘要翻译： 从半导体晶片上的配准标记去除有机颗粒的方法。 该方法包括提供包括至少部分填充有机颗粒的至少一个配准标记的半导体晶片。 所述至少一个对准标记具有从约1.0μm到约3.0μm的沟槽宽度。 半导体晶片暴露于包含四甲基氢氧化铵和至少一种表面活性剂如炔属二醇表面活性剂的清洗溶液中。 半导体晶片暴露于超声波或兆声波振动能。 还公开了预先进行化学机械平面化处理并且具有减少量的有机颗粒在对准标记中的半导体晶片。

    Methods of Modifying Oxide Spacers
    29.
    发明申请
    Methods of Modifying Oxide Spacers 有权
    改性氧化物垫片的方法

    公开(公告)号：US20120015520A1

    公开(公告)日：2012-01-19

    申请号：US13246050

    申请日：2011-09-27

    申请人： Joseph Neil Greeley ,  Paul Morgan ,  Mark Kiehlbauch

    发明人： Joseph Neil Greeley ,  Paul Morgan ,  Mark Kiehlbauch

    IPC分类号： H01L21/308 ,  H01L21/306

    CPC分类号： H01L21/0337

    摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.

    摘要翻译： 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

    Methods of modifying oxide spacers
    30.
    发明授权
    Methods of modifying oxide spacers 有权
    修饰氧化物间隔物的方法

    公开(公告)号：US08026180B2

    公开(公告)日：2011-09-27

    申请号：US11777005

    申请日：2007-07-12

    申请人： Joseph Neil Greeley ,  Paul Morgan ,  Mark Kiehlbauch

    发明人： Joseph Neil Greeley ,  Paul Morgan ,  Mark Kiehlbauch

    IPC分类号： H01N21/302

    CPC分类号： H01L21/0337

    摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.

    摘要翻译： 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。