公开(公告)号：US20230159866A1

公开(公告)日：2023-05-25

申请号：US17991251

申请日：2022-11-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Michael L. White ,  Jun Liu ,  Aditya Dilip Verma

IPC: C11D11/00 ,  C11D1/72 ,  C11D3/43 ,  C11D3/30 ,  C11D3/04 ,  C11D3/37 ,  C11D3/34 ,  C11D3/39 ,  C11D3/36 ,  C11D3/22 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D1/721 ,  C11D3/43 ,  C11D3/30 ,  C11D3/044 ,  C11D3/3776 ,  C11D3/3454 ,  C11D3/3942 ,  C11D3/042 ,  C11D3/361 ,  C11D3/225 ,  H01L21/02057

Abstract: Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

公开(公告)号：US20220336210A1

公开(公告)日：2022-10-20

申请号：US17720580

申请日：2022-04-14

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Michael L. White ,  Daniela White ,  Emanuel I. Cooper

IPC: H01L21/02

Abstract: Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

公开(公告)号：US20220333012A1

公开(公告)日：2022-10-20

申请号：US17855603

申请日：2022-06-30

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  David Kuiper ,  Susan Dimeo

IPC: C09K13/08 ,  H01L21/311 ,  C09K13/06

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US10138117B2

公开(公告)日：2018-11-27

申请号：US14908888

申请日：2014-07-31

Applicant: Entegris, Inc.

Inventor： Li-Min Chen ,  Steven Lippy ,  Daniela White ,  Emanuel I. Cooper

IPC: B81C1/00 ,  C09K13/08 ,  G03F7/40 ,  H01L21/3213 ,  C09K13/10 ,  H01L21/02 ,  H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.

公开(公告)号：US20230030323A1

公开(公告)日：2023-02-02

申请号：US17949956

申请日：2022-09-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11492709B2

公开(公告)日：2022-11-08

申请号：US17230633

申请日：2021-04-14

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11446708B2

公开(公告)日：2022-09-20

申请号：US16172139

申请日：2018-10-26

Applicant: ENTEGRIS, INC.

Inventor： Daniela White

IPC: B08B3/08 ,  B08B1/00 ,  B08B1/02 ,  B24B37/34 ,  C11D3/30 ,  C11D3/37 ,  C11D3/20 ,  C11D7/34 ,  C11D7/32 ,  C11D7/26 ,  B08B3/04 ,  C11D11/00 ,  C11D7/10 ,  A46B13/00 ,  H01L21/67

Abstract: Described are methods for removing abrasive particles from a polymeric surface, such as from a polymeric surface of a cleaning brush used in a post chemical-mechanical processing cleaning step, as well as related cleaning solutions.

公开(公告)号：US20220275276A1

公开(公告)日：2022-09-01

申请号：US17747731

申请日：2022-05-18

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel I. Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US11124741B2

公开(公告)日：2021-09-21

申请号：US16782912

申请日：2020-02-05

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Michael White ,  Daniela White

IPC: C11D7/32 ,  C11D3/36 ,  C11D1/90 ,  C11D3/20 ,  C11D3/33

Abstract: The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

公开(公告)号：US10988718B2

公开(公告)日：2021-04-27

申请号：US16308053

申请日：2017-03-09

Applicant: ENTEGRIS, INC. ,  Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

Inventor： Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/20 ,  C11D3/37 ,  H01L21/02 ,  C11D1/08 ,  C11D1/00 ,  C23F1/26 ,  C23F1/28 ,  B08B3/08 ,  C11D3/04 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.