公开(公告)号：US07732227B2

公开(公告)日：2010-06-08

申请号：US11517389

申请日：2006-09-08

Applicant: Eric J. Strang ,  Richard Parsons

Inventor： Eric J. Strang ,  Richard Parsons

IPC: H01L21/66 ,  G01R31/26 ,  C23C14/54 ,  C23F1/00

CPC classification number: H01L21/67253 ,  G01B15/02 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299 ,  H01L21/67069

Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

Abstract translation: 墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。 第二反射镜的凹面与第一反射镜的凹面相对。 电源耦合到第一反射镜并且被配置为产生微波信号。 检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。 控制系统连接到检测器，该检测器比较第一测量电压和第二测量电压，并确定第二电压是否超过阈值。 一种监测等离子体室中的壁膜的方法包括将晶片装载在室中，将微波信号输出的频率设定为谐振频率，以及测量微波信号的第一真空谐振电压。 该方法包括处理晶片，测量微波信号的第二真空谐振电压，以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

公开(公告)号：US07544269B2

公开(公告)日：2009-06-09

申请号：US10490850

申请日：2002-10-24

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01L21/67253 ,  G01B15/02 ,  G01B15/04 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/67069

Abstract: A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128). A method of monitoring electron density in the processing system is provided that includes loading a wafer, setting a frequency of a microwave signal to a resonance frequency, and measuring a first voltage of the signal during a vacuum condition. The method further includes processing the wafer (114), measuring a second voltage of the signal during a plasma condition, and determining an electron density from a difference between the second voltage and the first voltage.

Abstract translation: 一种等离子体处理系统，包括具有衬底保持器（128）和监视系统（130）的等离子体室（120）。 监测系统（130）包括具有与保持器（128）相对的凹表面（142）的微波反射镜（140），并且电源（160）耦合到其上，产生垂直于晶片平面（129）的微波信号， （128）。 检测器（170）耦合到反射镜（140）并且测量腔室（120）内的信号的真空谐振电压。 提供一种控制系统（180），其在等离子体状态期间测量真空状态期间的第一电压和第二电压，并根据第二电压和第一电压之间的差确定电子密度。 处理系统（110）可以包括多个监控系统（130a，130b，130c），其具有设置在与衬底保持器（128）相对的空间阵列中的反射镜（140a，140b，140c）。 提供了一种在处理系统中监测电子密度的方法，包括加载晶片，将微波信号的频率设置为谐振频率，以及在真空条件期间测量信号的第一电压。 该方法还包括处理晶片（114），在等离子体状态期间测量信号的第二电压，以及从第二电压和第一电压之间的差确定电子密度。

公开(公告)号：US07263447B2

公开(公告)日：2007-08-28

申请号：US10495864

申请日：2003-01-30

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/00 ,  G01F1/00

CPC classification number: H01J37/32275 ,  H01J37/32192 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67253

Abstract: An equipment status monitoring system and method of operating thereof is described. The equipment status monitoring system includes at least one microwave mirror in a plasma processing chamber forming a multi-modal resonator. A power source is coupled to a mirror and configured to produce an excitation signal extending along an axis generally perpendicular to a substrate. A detector is coupled to a mirror and configured to measure an excitation signal. A control system is connected to the detector that compares a measured excitation signal to a normal excitation signal in order to determine a status of the material processing equipment.

Abstract translation: 描述了设备状态监视系统及其操作方法。 设备状态监测系统包括形成多模谐振器的等离子体处理室中的至少一个微波反射镜。 电源耦合到反射镜并且被配置为产生沿着大致垂直于衬底的轴延伸的激励信号。 检测器耦合到反射镜并且被配置为测量激励信号。 控制系统连接到检测器，其将测量的激励信号与正常激励信号进行比较，以便确定材料处理设备的状态。

公开(公告)号：US07233878B2

公开(公告)日：2007-06-19

申请号：US10767347

申请日：2004-01-30

Applicant: Andrej S. Mitrovic ,  Eric J. Strang

Inventor： Andrej S. Mitrovic ,  Eric J. Strang

IPC: G01N21/88

CPC classification number: G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract translation: 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US06954077B2

公开(公告)日：2005-10-11

申请号：US10495774

申请日：2003-01-31

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: G01R27/04 ,  G03G15/00 ,  H01J37/32 ,  H01P7/06

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299

Abstract: An equipment status monitoring system (10) and method of operating includes first (40) and second (50) microwave mirrors in a plasma processing chamber (20) each forming a multi-modal resonator. A power source (60) is coupled to the first mirror (40) and configured to produce an excitation signal. A detector (70) is coupled to at least one of the first mirror (40) and the second mirror (50) and configured to measure an excitation signal. At least one of the power source (60) and the detector (70) is coupled to a divergent aperture (44).

Abstract translation: 设备状态监测系统（10）和操作方法包括等离子体处理室（20）中的每个形成多模共振器的第一（40）和第二（50）微波反射镜。 电源（60）耦合到第一反射镜（40）并且被配置为产生激励信号。 检测器（70）耦合到第一反射镜（40）和第二反射镜（50）中的至少一个并被配置成测量激励信号。 电源（60）和检测器（70）中的至少一个耦合到发散孔（44）。

公开(公告)号：US06949722B2

公开(公告)日：2005-09-27

申请号：US10630783

申请日：2003-07-31

Applicant: Eric J. Strang ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Wayne L. Johnson

IPC: H01L21/26 ,  H01L21/00 ,  H01L21/687 ,  H05B3/68

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

公开(公告)号：US06806949B2

公开(公告)日：2004-10-19

申请号：US10331349

申请日：2002-12-31

Applicant: Audunn Ludviksson ,  Eric J. Strang

Inventor： Audunn Ludviksson ,  Eric J. Strang

IPC: G01N2100

CPC classification number: G01N21/68 ,  G01N21/64

Abstract: A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

公开(公告)号：US09139910B2

公开(公告)日：2015-09-22

申请号：US12814301

申请日：2010-06-11

Applicant: Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

Inventor： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/44 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/463

Abstract: A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

Abstract translation: 描述了在沉积系统中在衬底上沉积薄膜的方法。 该方法包括在沉积系统中设置包括多个加热元件区域的气体加热装置，并且独立地控制多个加热元件区域中的每一个的温度，其中多个加热元件区域中的每一个具有一个或多个电阻加热 元素。 另外，该方法包括在沉积系统中的衬底保持器上设置衬底，其中衬底保持器具有一个或多个温度控制区。 该方法还包括向耦合到沉积系统的气体加热装置提供成膜组合物，使用气体加热装置热解成膜组合物的一种或多种组分，并将成膜组合物引入到沉积系统中的基底上 在基板上沉积薄膜。

公开(公告)号：US08296687B2

公开(公告)日：2012-10-23

申请号：US10673506

申请日：2003-09-30

Applicant: Eric J. Strang ,  Andrej Mitrovic

Inventor： Eric J. Strang ,  Andrej Mitrovic

IPC: G06F17/50

CPC classification number: G05B19/41885 ,  G05B2219/32364 ,  G05B2219/32385 ,  G05B2219/45031 ,  Y02P90/26 ,  Y02P90/86

Abstract: A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determine a fault in the process performed by the semiconductor processing tool.

Abstract translation: 一种用于分析由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型进行第一原理模拟，以提供第一原理模拟结果; 并且第一原理模拟结果用于确定由半导体处理工具执行的过程中的故障。

公开(公告)号：US08073667B2

公开(公告)日：2011-12-06

申请号：US10673507

申请日：2003-09-30

Applicant: Eric J. Strang ,  Andrej Mitrovic

Inventor： Eric J. Strang ,  Andrej Mitrovic

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool.

Abstract translation: 用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质包括输入与由半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于控制由半导体处理工具执行的处理。