Operating long on-chip buses
    21.
    发明授权
    Operating long on-chip buses 失效
    经营长时间的片上公交车

    公开(公告)号:US07439759B2

    公开(公告)日:2008-10-21

    申请号:US10558145

    申请日:2004-05-17

    IPC分类号: H03K17/16 H03K19/003

    CPC分类号: G06F13/4072

    摘要: As technology scales, on-chip interconnects are becoming narrower, and the height of such interconnects is not scaling linearly with the width. This leads to an increase of coupling capacitance with neighboring wires, leading to higher crosstalk. It also leads to poor performance due to poor RC response at the receiving of the wire, which may even result in failure in very noisy environments. An adaptive threshold scheme is proposed in which receiver switching thresholds are adjusted according to the detected noise in bus lines. These noise levels are dependent on both the front-end processing (transistor performance) as well as on the backend processing (metal resistance, capacitance, width and spacing). The circuit therefore automatically compensates for process variations.

    摘要翻译: 随着技术的发展,片上互连变得越来越窄,这种互连的高度并没有随宽度而线性缩放。 这导致与相邻导线的耦合电容的增加,导致更高的串扰。 由于在接收线路时RC响应差,导致性能差,甚至可能导致非常嘈杂的环境中的故障​​。 提出了一种自适应阈值方案,其中接收机切换阈值根据总线线路中检测到的噪声进行调整。 这些噪声水平取决于前端处理(晶体管性能)以及后端处理(金属电阻,电容,宽度和间距)。 因此,电路自动补偿过程变化。

    Current mode signaling in electronic data processing circuit
    22.
    发明申请
    Current mode signaling in electronic data processing circuit 有权
    电子数据处理电路中的电流模式信号

    公开(公告)号:US20060244488A1

    公开(公告)日:2006-11-02

    申请号:US10525865

    申请日:2003-07-31

    IPC分类号: H03K19/0175

    摘要: An electronic data processing circuit uses current mode signalling on a communication conductor, wherein a receiver supplies current to the communication conductor to try and keep a voltage on the conductor constant and measures the current that is needed to do so. A transition coding circuit is coupled between a data source circuit and the communication conductor, for driving the communication conductor in a first state in pulses in response to transitions in the logic signal and in a second state outside the pulses. The level that is used for indicating no change is selected so the current that needs to be supplied by the receiver is smaller when no change is signalled than when a change is signalled. Preferably only a nearly zero quiescent current is needed when there is no change.

    摘要翻译: 电子数据处理电路在通信导体上使用电流模式信号,其中接收器向通信导体提供电流以尝试并保持导体上的电压恒定并且测量所需的电流。 转换编码电路耦合在数据源电路和通信导体之间,用于响应于逻辑信号中的转换和在脉冲之外的第二状态以脉冲方式驱动通信导体处于第一状态。 选择用于指示没有变化的电平,所以当没有发出变化时,接收器需要提供的电流比发出变化时更小。 当没有变化时,最好只需要几乎零静态电流。

    Cathode ray tube comprising a semiconductor cathode
    23.
    发明授权
    Cathode ray tube comprising a semiconductor cathode 失效
    包括半导体阴极的阴极射线管

    公开(公告)号:US6140664A

    公开(公告)日:2000-10-31

    申请号:US408088

    申请日:1995-03-21

    摘要: To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.

    摘要翻译: 为了防止位于栅电极下方的绝缘层的击穿,栅电极通过高欧姆电阻连接到外部端子。 高欧姆电阻可以形成用于多个栅电极的偏置电压的电阻网络的一部分。 电阻网络可以部分地实现在绝缘层上。

    Semiconductor device having a memory cell
    24.
    发明授权
    Semiconductor device having a memory cell 失效
    具有存储单元的半导体器件

    公开(公告)号:US5329481A

    公开(公告)日:1994-07-12

    申请号:US989629

    申请日:1992-12-14

    CPC分类号: G11C11/34

    摘要: A semiconductor device with at least one programmable memory cell which includes a bipolar transistor (T.sub.1) with an emitter (11) and a collector (12) of a first conductivity type and a base (10) of a second, opposite conductivity type. The emitter (11) and collector (12) are coupled to a first supply line (100) and a second supply line (200), respectively. The base (10) is coupled to writing means (WRITE) through a control transistor (T.sub.2). Reading means (READ) are included in a current path (I) which extends between the first supply line (100) and the second supply line (200) and which includes a current path between the emitter (11) and collector (12). In a preferred embodiment, the collector (12) is in addition coupled to the second supply line (200) via a switchable load (T.sub.5).

    摘要翻译: 一种具有至少一个可编程存储单元的半导体器件,其包括具有第一导电类型的发射极(11)和集电极(12)的双极晶体管(T1)和具有第二导电类型的第二基极(10)。 发射极(11)和集电极(12)分别耦合到第一电源线(100)和第二供电线(200)。 基极(10)通过控制晶体管(T2)耦合到写入装置(WRITE)。 读取装置(READ)包括在第一电源线(100)和第二电源线(200)之间延伸的电流路径(I)中,并且包括发射器(11)和集电极(12)之间的电流路径。 在优选实施例中,收集器(12)还经由可切换负载(T5)耦合到第二供电管线(200)。

    Linear-gain amplifier arrangement
    26.
    发明授权
    Linear-gain amplifier arrangement 失效
    线性增益放大器布置

    公开(公告)号:US5006815A

    公开(公告)日:1991-04-09

    申请号:US418414

    申请日:1989-10-06

    CPC分类号: H03F1/3211 H03G1/04

    摘要: A linear-gain amplifier arrangement comprises a current amplifying cell consisting of field-effect transistors and comprising a first (M1, M3) and a second (M2, M4current-mirror circuit whose respective input transistors (M1; M2) and output transistors (M3; M4) constitute a first and a second differential pair. The input transistors (M1; M2) have their drain electrodes connected to voltage-current converter (V/I) made up of field-effect transistors. The V/I converter supplies difference currents (I.sub.in1 ; I.sub.in2) which are square-law functions of the input voltage (U.sub.in) to be amplified. The difference between these input currents is a linear function of the input voltage. When the transistors are operated in their saturation regions the difference between the output currents (I.sub.out1 ; I.sub.out2) is also a linear function of the input voltage (U.sub.in). By adding a direct voltage (V.sub.c) to the gate-source voltage of the input and output transistors or by adding a direct current (I.sub.c) to the respective input currents (I.sub.in1 ; I.sub.in2) the gain can be varied without a change in bandwidth. When the arrangement is constructed as an integrated semiconductor circuit its gain can be made immune to temperature variations and tolerances in the fabrication process.

    Operating long on-chip buses
    27.
    发明申请
    Operating long on-chip buses 失效
    经营长时间的片上公交车

    公开(公告)号:US20060244481A1

    公开(公告)日:2006-11-02

    申请号:US10558145

    申请日:2004-05-17

    IPC分类号: H03K19/003

    CPC分类号: G06F13/4072

    摘要: As technology scales, on-chip interconnects are becoming narrower, and the height of such interconnects is not scaling linearly with the width. This leads to an increase of coupling capacitance with neighboring wires, leading to higher crosstalk. It also leads to poor performance due to poor RC response at the receiving of the wire, which may even result in failure in very noisy environments. An adaptive threshold scheme is proposed in which receiver switching thresholds are adjusted according to the detected noise in bus lines. These noise levels are dependent on both the front-end processing (transistor performance) as well as on the backend processing (metal resistance, capacitance, width and spacing). The circuit therefore automatically compensates for process variations.

    摘要翻译: 随着技术的发展,片上互连变得越来越窄,这种互连的高度并没有随宽度而线性缩放。 这导致与相邻导线的耦合电容的增加,导致更高的串扰。 由于在接收线路时RC响应差,导致性能差,甚至可能导致非常嘈杂的环境中的故障​​。 提出了一种自适应阈值方案,其中接收机切换阈值根据总线线路中检测到的噪声进行调整。 这些噪声水平取决于前端处理(晶体管性能)以及后端处理(金属电阻,电容,宽度和间距)。 因此,电路自动补偿过程变化。

    Reading circuit for reading a memory cell
    28.
    发明授权
    Reading circuit for reading a memory cell 有权
    用于读取存储单元的读取电路

    公开(公告)号:US07038936B2

    公开(公告)日:2006-05-02

    申请号:US10503459

    申请日:2003-01-20

    IPC分类号: G11C11/00

    CPC分类号: G11C7/062 G11C11/419

    摘要: A reading circuit comprises a first and second cascode circuit and a first and second current mirror. The first cascode circuit can be connected to a bit line of a memory cell and the second cascode circuit can be connected to a reference bit line of a reference cell. The first output terminals of the first and second cascode circuits are connected to first terminals of the first and second current mirrors, respectively. The second output terminals of the first and second cascode circuits are connected to the second terminals of the second and first current mirrors, respectively. A tri-state buffer is coupled between the second terminals of the first and second current mirrors said buffer having bit invert capabilities.

    摘要翻译: 读取电路包括第一和第二共源共栅电路以及第一和第二电流镜。 第一级联电路可以连接到存储器单元的位线,并且第二级联电路可以连接到参考单元的参考位线。 第一和第二共源共栅电路的第一输出端分别连接到第一和第二电流镜的第一端。 第一和第二共源共栅电路的第二输出端分别连接到第二和第一电流镜的第二端。 三态缓冲器耦合在第一和第二电流镜的第二端之间,所述缓冲器具有位反转能力。

    Current sense amplifier
    30.
    发明授权
    Current sense amplifier 有权
    电流检测放大器

    公开(公告)号:US06205070B1

    公开(公告)日:2001-03-20

    申请号:US09464856

    申请日:1999-12-16

    IPC分类号: G11C700

    CPC分类号: G11C11/419 G11C7/062

    摘要: A memory in an integrated circuit contains a current sense amplifier. The current sense amplifier contains a first and second input transistor with cross-coupled gates and drains, each transistor having a source coupled to a respective memory bit line. The current from the drains of the first and second input transistor is guided to source-drain channels of the first and second load transistor respectively. The drains of the first and second input transistor are coupled to a common node via source-gate links of the first and second load transistor respectively. The gate/source voltage drops of the first and second load transistor are arranged in a direction opposite to a direction of gate/source voltage drops of the first and second input transistor between the complementary bit lines and the common node.

    摘要翻译: 集成电路中的存储器包含电流检测放大器。 电流检测放大器包含具有交叉耦合栅极和漏极的第一和第二输入晶体管,每个晶体管具有耦合到相应存储器位线的源极。 来自第一和第二输入晶体管的漏极的电流分别被引导到第一和第二负载晶体管的源极 - 漏极通道。 第一和第二输入晶体管的漏极分别通过第一和第二负载晶体管的源极 - 栅极耦合到公共节点。 第一和第二负载晶体管的栅极/源极电压降沿与互补位线和公共节点之间的第一和第二输入晶体管的栅极/源极电压降的方向相反的方向排列。