摘要:
As technology scales, on-chip interconnects are becoming narrower, and the height of such interconnects is not scaling linearly with the width. This leads to an increase of coupling capacitance with neighboring wires, leading to higher crosstalk. It also leads to poor performance due to poor RC response at the receiving of the wire, which may even result in failure in very noisy environments. An adaptive threshold scheme is proposed in which receiver switching thresholds are adjusted according to the detected noise in bus lines. These noise levels are dependent on both the front-end processing (transistor performance) as well as on the backend processing (metal resistance, capacitance, width and spacing). The circuit therefore automatically compensates for process variations.
摘要:
An electronic data processing circuit uses current mode signalling on a communication conductor, wherein a receiver supplies current to the communication conductor to try and keep a voltage on the conductor constant and measures the current that is needed to do so. A transition coding circuit is coupled between a data source circuit and the communication conductor, for driving the communication conductor in a first state in pulses in response to transitions in the logic signal and in a second state outside the pulses. The level that is used for indicating no change is selected so the current that needs to be supplied by the receiver is smaller when no change is signalled than when a change is signalled. Preferably only a nearly zero quiescent current is needed when there is no change.
摘要:
To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.
摘要:
A semiconductor device with at least one programmable memory cell which includes a bipolar transistor (T.sub.1) with an emitter (11) and a collector (12) of a first conductivity type and a base (10) of a second, opposite conductivity type. The emitter (11) and collector (12) are coupled to a first supply line (100) and a second supply line (200), respectively. The base (10) is coupled to writing means (WRITE) through a control transistor (T.sub.2). Reading means (READ) are included in a current path (I) which extends between the first supply line (100) and the second supply line (200) and which includes a current path between the emitter (11) and collector (12). In a preferred embodiment, the collector (12) is in addition coupled to the second supply line (200) via a switchable load (T.sub.5).
摘要:
A reference generator includes a first, a second and an additional third current mirror for generating both a reference output current and a reference output voltage. As the reference output voltage only depends on the gate-source voltages of transistors which are fed with a constant current, the reference output voltage has a constant value and is substantially independent of the ambient temperature.
摘要:
A linear-gain amplifier arrangement comprises a current amplifying cell consisting of field-effect transistors and comprising a first (M1, M3) and a second (M2, M4current-mirror circuit whose respective input transistors (M1; M2) and output transistors (M3; M4) constitute a first and a second differential pair. The input transistors (M1; M2) have their drain electrodes connected to voltage-current converter (V/I) made up of field-effect transistors. The V/I converter supplies difference currents (I.sub.in1 ; I.sub.in2) which are square-law functions of the input voltage (U.sub.in) to be amplified. The difference between these input currents is a linear function of the input voltage. When the transistors are operated in their saturation regions the difference between the output currents (I.sub.out1 ; I.sub.out2) is also a linear function of the input voltage (U.sub.in). By adding a direct voltage (V.sub.c) to the gate-source voltage of the input and output transistors or by adding a direct current (I.sub.c) to the respective input currents (I.sub.in1 ; I.sub.in2) the gain can be varied without a change in bandwidth. When the arrangement is constructed as an integrated semiconductor circuit its gain can be made immune to temperature variations and tolerances in the fabrication process.
摘要:
As technology scales, on-chip interconnects are becoming narrower, and the height of such interconnects is not scaling linearly with the width. This leads to an increase of coupling capacitance with neighboring wires, leading to higher crosstalk. It also leads to poor performance due to poor RC response at the receiving of the wire, which may even result in failure in very noisy environments. An adaptive threshold scheme is proposed in which receiver switching thresholds are adjusted according to the detected noise in bus lines. These noise levels are dependent on both the front-end processing (transistor performance) as well as on the backend processing (metal resistance, capacitance, width and spacing). The circuit therefore automatically compensates for process variations.
摘要:
A reading circuit comprises a first and second cascode circuit and a first and second current mirror. The first cascode circuit can be connected to a bit line of a memory cell and the second cascode circuit can be connected to a reference bit line of a reference cell. The first output terminals of the first and second cascode circuits are connected to first terminals of the first and second current mirrors, respectively. The second output terminals of the first and second cascode circuits are connected to the second terminals of the second and first current mirrors, respectively. A tri-state buffer is coupled between the second terminals of the first and second current mirrors said buffer having bit invert capabilities.
摘要:
A cathode ray tube device in which two deflection yokes and two electron guns are used, but in which only one shadow mask is used. Image uniformity is obtained by creating a partial overlap of the two images created by the two yokes.
摘要:
A memory in an integrated circuit contains a current sense amplifier. The current sense amplifier contains a first and second input transistor with cross-coupled gates and drains, each transistor having a source coupled to a respective memory bit line. The current from the drains of the first and second input transistor is guided to source-drain channels of the first and second load transistor respectively. The drains of the first and second input transistor are coupled to a common node via source-gate links of the first and second load transistor respectively. The gate/source voltage drops of the first and second load transistor are arranged in a direction opposite to a direction of gate/source voltage drops of the first and second input transistor between the complementary bit lines and the common node.