公开(公告)号：US20220098443A1

公开(公告)日：2022-03-31

申请号：US17547176

申请日：2021-12-09

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C09G1/02 ,  H01L21/02 ,  H01L21/321

Abstract: The present invention provides a polishing liquid which has a good polishing speed and reduces the occurrence of dishing on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid including colloidal silica, one or more specific compounds selected from the group consisting of glycine, alanine, sarcosine, and iminodiacetic acid, a passivation film forming agent, hydrogen peroxide, sodium, and ammonia, in which a mass ratio of a content of ammonia to a content of sodium is 1×103 to 1×106, and a pH is 5.5 to 8.0.

公开(公告)号：US20200368693A1

公开(公告)日：2020-11-26

申请号：US16992499

申请日：2020-08-13

Applicant: FUJIFILM Corporation

Inventor： Tadashi OMATSU ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satomi TAKAHASHI

IPC: B01D61/58 ,  B01D61/08 ,  B01D61/18 ,  B01D65/02 ,  B01D69/02 ,  B01D69/12 ,  B01D3/14 ,  B01D71/36 ,  B01D71/26 ,  B01D71/56 ,  H01L21/67

Abstract: A filtering device for obtaining a chemical liquid by purifying a liquid to be purified has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a first resin having a hydrophilic group.

公开(公告)号：US20200341382A1

公开(公告)日：2020-10-29

申请号：US16924859

申请日：2020-07-09

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/32 ,  G03F7/11 ,  G03F7/004 ,  G01N15/06 ,  G01N21/95

Abstract: An object is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by KrF excimer laser exposure and ArF excimer laser exposure. Another object is to provide a method for analyzing a test target solution and a method for producing a liquid chemical.A liquid chemical includes an organic solvent; and metal-containing particles containing a metal atom and having a particle size of 10 to 100 nm, in which the number of the metal-containing particles contained is 1.0×10−2 to 1.0×1012 particles/cm3.

公开(公告)号：US20200181008A1

公开(公告)日：2020-06-11

申请号：US16787197

申请日：2020-02-11

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Masahiro YOSHIDOME ,  Yukihisa KAWADA

IPC: C03C17/245 ,  B65D23/02 ,  C03C17/00 ,  G03F7/004 ,  C09G1/00

Abstract: An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time. The chemical liquid storage body according to an embodiment of the present invention includes a container and a chemical liquid stored in the container, in which the chemical liquid contains at least one kind of specific metal component selected from the group consisting of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.

公开(公告)号：US20190258165A1

公开(公告)日：2019-08-22

申请号：US16402215

申请日：2019-05-02

Applicant: FUJIFILM Corporation

Inventor： Takashi NAKAMURA ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents, in which the organic solvents are selected from the group consisting of compounds represented by Formulae (1) to (7), compounds represented by Formulae (9) to (11), a 3- to 5-membered cyclic ketone compound that may have a substituent, a cyclic ketone compound with 6 or more members that may have a substituent, a lactone compound, and a lactam compound, the chemical liquid contains or does not contain an ether-based compound other than the compounds represented by Formula (1), Formula (5), Formula (7), and Formulae (9) to (11), and in a case where the chemical liquid contains the ether-based compound, a content of the ether-based compound in the chemical liquid is less than 10 mass ppm with respect to a total mass of the chemical liquid.

公开(公告)号：US20190243240A1

公开(公告)日：2019-08-08

申请号：US16390023

申请日：2019-04-22

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: G03F7/004 ,  B65D85/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

CPC classification number: G03F7/0048 ,  B65D85/70 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/161 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027

Abstract: An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C., in a case where the chemical liquid contains one kind of the impurity metal, a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt, and in a case where the chemical liquid contains two or more kinds of the impurity metals, a content of each of the impurity metals in the chemical liquid is 0.001 to 100 mass ppt.

公开(公告)号：US20190196327A1

公开(公告)日：2019-06-27

申请号：US16289813

申请日：2019-03-01

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0048 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027 ,  H01L21/0274

Abstract: An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability.Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

公开(公告)号：US20190194580A1

公开(公告)日：2019-06-27

申请号：US16291684

申请日：2019-03-04

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C11D7/08 ,  B08B3/08 ,  C11D7/26 ,  C11D7/36 ,  C11D7/34 ,  C11D7/32 ,  C11D7/10 ,  C11D7/50 ,  C11D1/02 ,  C11D1/04 ,  C11D3/37 ,  C11D3/43 ,  C11D3/04 ,  C11D3/20 ,  C11D3/36 ,  C11D3/34 ,  C11D3/33 ,  C11D3/30 ,  C11D3/28

CPC classification number: C11D7/08 ,  B08B3/08 ,  C11D1/02 ,  C11D1/04 ,  C11D3/02 ,  C11D3/04 ,  C11D3/042 ,  C11D3/046 ,  C11D3/20 ,  C11D3/2058 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/34 ,  C11D3/3454 ,  C11D3/36 ,  C11D3/37 ,  C11D3/3765 ,  C11D3/43 ,  C11D7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/22 ,  C11D7/26 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D7/50 ,  C11D7/5022 ,  C11D17/08 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/304 ,  H01L21/306 ,  H01L21/768

Abstract: A treatment liquid is a treatment liquid for a semiconductor device, which contains a fluorine-containing compound and a water-soluble aromatic compound not having a heterocyclic group but having a benzene ring, and has a pH of 5 or less.

公开(公告)号：US20190064672A1

公开(公告)日：2019-02-28

申请号：US16172027

申请日：2018-10-26

Applicant: FUJIFILM Corporation

Inventor： Satoru MURAYAMA ,  Tetsuya SHIMIZU ,  Tetsuya KAMIMURA

IPC: G03F7/32 ,  H01L21/027

Abstract: An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.

公开(公告)号：US20190025702A1

公开(公告)日：2019-01-24

申请号：US16143496

申请日：2018-09-27

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satoru MURAYAMA

IPC: G03F7/32 ,  G03F7/20 ,  H01L21/02

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed.A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.