公开(公告)号：US20190243240A1

公开(公告)日：2019-08-08

申请号：US16390023

申请日：2019-04-22

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: G03F7/004 ,  B65D85/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

CPC classification number: G03F7/0048 ,  B65D85/70 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/161 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027

Abstract: An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C., in a case where the chemical liquid contains one kind of the impurity metal, a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt, and in a case where the chemical liquid contains two or more kinds of the impurity metals, a content of each of the impurity metals in the chemical liquid is 0.001 to 100 mass ppt.

公开(公告)号：US20170309492A1

公开(公告)日：2017-10-26

申请号：US15647351

申请日：2017-07-12

Applicant: FUJIFILM Corporation

Inventor： Satomi TAKAHASHI ,  Seongmu BAK ,  Atsushi MIZUTANI ,  Tadashi INABA

IPC: H01L21/304 ,  C22B58/00 ,  C22B30/04 ,  C07C321/26 ,  C07C321/22 ,  H01L21/308 ,  C07C321/04

CPC classification number: H01L21/304 ,  C07C321/04 ,  C07C321/22 ,  C07C321/26 ,  C07C323/12 ,  C07C323/52 ,  C07C323/58 ,  C07D213/70 ,  C07D239/40 ,  C07D249/12 ,  C22B30/04 ,  C22B58/00 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/3081 ,  H01L21/31111 ,  Y02P20/582

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

公开(公告)号：US20160118264A1

公开(公告)日：2016-04-28

申请号：US14927700

申请日：2014-05-01

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuya KAMIMURA ,  Akiko KOYAMA ,  Satomi TAKAHASHI ,  Atsushi MIZUTANI ,  Yasuo SUGISHIMA

IPC: H01L21/306 ,  H01L21/324 ,  H01L21/02

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains an alkali compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供了一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含选自镍铂（NiPt），钛（Ti），镍（Ni））和至少一种特定金属元素的第二层 钴（Co），该方法包括：使包含碱性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。

公开(公告)号：US20240219359A1

公开(公告)日：2024-07-04

申请号：US18603775

申请日：2024-03-13

Applicant: FUJIFILM Corporation

Inventor： Tetsuya SHIMIZU ,  Michihiro SHIRAKAWA ,  Satomi TAKAHASHI

IPC: G01N30/72 ,  G01N30/02 ,  G03F7/32

CPC classification number: G01N30/7206 ,  G03F7/32 ,  G01N2030/025

Abstract: An object of the present invention is to provide a method for inspecting a treatment liquid to determine whether the treatment liquid, when used as a developer or a rinsing liquid, allows formation of a resist pattern with reduced variation in line width. Another object of the present invention is to provide a method for producing a treatment liquid.
The method for inspecting a treatment liquid according to the present invention is a method for inspecting a treatment liquid including an aliphatic hydrocarbon solvent and has a step A1 of acquiring measurement data of a content of an acid component in the treatment liquid, the acid component being at least one selected from the group consisting of carboxylic acids having a hydrocarbon group having 1 to 3 carbon atoms and formic acid, and a step A2 of determining whether the measurement data acquired in the step A1 falls within a preset allowable range.

公开(公告)号：US20240100482A1

公开(公告)日：2024-03-28

申请号：US18530997

申请日：2023-12-06

Applicant: FUJIFILM Corporation

Inventor： Tadashi OMATSU ,  Tetsuya KAMIMURA ,  Tetsuya Shimizu ,  Satomi TAKAHASHI

IPC: B01D61/18 ,  B01D61/20 ,  B01D71/26 ,  B01D71/56 ,  B01D71/64

CPC classification number: B01D61/18 ,  B01D61/20 ,  B01D71/261 ,  B01D71/262 ,  B01D71/56 ,  B01D71/641 ,  B01D69/02

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A is a porous membrane containing a polyimide-based resin.

公开(公告)号：US20230132693A1

公开(公告)日：2023-05-04

申请号：US18062021

申请日：2022-12-06

Applicant: FUJIFILM Corporation

Inventor： Satomi TAKAHASHI ,  Toru TSUCHIHASHI

IPC: G03F7/32

Abstract: An object of the present invention is to provide a rinsing liquid that has excellent resolution and excellent film thickness loss suppressiveness in a case where the rinsing liquid is used to rinse a resist film and a pattern forming method that uses the rinsing liquid. The rinsing liquid according to an embodiment of the present invention is a rinsing liquid for resist film patterning for a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, and contains at least a first ester-based solvent having 7 carbon atoms other than an acetate.

公开(公告)号：US20210222092A1

公开(公告)日：2021-07-22

申请号：US17219818

申请日：2021-03-31

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: C11D7/36 ,  C11D7/26 ,  H01L21/02 ,  G03F7/32 ,  C11D7/20 ,  C11D11/00

Abstract: An object of the present invention is to provide a chemical liquid and a chemical liquid storage body having excellent performance of inhibiting metal impurity-containing defects. The chemical liquid according to an embodiment of the present invention contains an organic solvent, organic impurities, and metal impurities, in which the organic impurities contain a phosphoric acid ester and an adipic acid ester, and a mass ratio of a content of the phosphoric acid ester to a content of the adipic acid ester is equal to or higher than 1.

公开(公告)号：US20210132503A1

公开(公告)日：2021-05-06

申请号：US17144259

申请日：2021-01-08

Applicant: FUJIFILM Corporation

Inventor： Tadashi OOMATSU ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satomi TAKAHASHI ,  Akihiko OHTSU

IPC: G03F7/40 ,  G03F7/32 ,  C11D3/43 ,  C11D3/20 ,  C11D3/04 ,  C11D3/12 ,  C11D3/34 ,  C11D11/00

Abstract: An object of the present invention is to provide a chemical liquid which exhibits excellent defect inhibition performance even after long-term preservation, a kit, a pattern forming method, a chemical liquid manufacturing method, and a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, an acid component, and a metal component. The content of the acid component is equal to or greater than 1 mass ppt and equal to or smaller than 15 mass ppm with respect to the total mass of the chemical liquid. The content of the metal component is 0.001 to 100 mass ppt with respect to the total mass of the chemical liquid.

公开(公告)号：US20190171102A1

公开(公告)日：2019-06-06

申请号：US16273323

申请日：2019-02-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Yukihisa KAWADA

IPC: G03F7/004 ,  H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F1/66

Abstract: An object of the present invention is to provide a solution which is excellent in both the temporal stability of an organic solvent and the defect inhibition properties. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.The solution of the present invention is a solution containing an organic solvent and a stabilizer, in which a content of the stabilizer with respect to a total mass of the solution is 0.1 to 50 mass ppm.

公开(公告)号：US20190136161A1

公开(公告)日：2019-05-09

申请号：US16236695

申请日：2018-12-31

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: C11D11/00 ,  C11D7/32 ,  C11D7/04 ,  C11D7/26 ,  C11D7/50 ,  C11D7/08 ,  C11D7/34 ,  C11D7/10 ,  H01L21/02 ,  B08B3/10

Abstract: A treatment liquid is a treatment liquid for a semiconductor device containing an oxidizing agent, a corrosion inhibitor, water, and Fe, in which the content ratio of the Fe to the oxidizing agent is 10−10 to 10−4 in terms of mass ratio.