公开(公告)号：US20160252819A1

公开(公告)日：2016-09-01

申请号：US15152725

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Tetsuya KAMIMURA ,  Atsushi MIZUTANI

IPC: G03F7/42 ,  H01L21/266 ,  H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/324

CPC classification number: G03F7/425 ,  G03F7/426 ,  H01L21/266 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7848

Abstract: Provided is a stripper which removes a modified resist on a semiconductor substrate and contains an alcohol compound, a quaternary ammonium hydroxide compound, and 4% by mass or greater of water.

Abstract translation: 提供一种汽提器，其移除半导体衬底上的改性抗蚀剂并含有醇化合物，氢氧化季铵化合物和4质量％以上的水。

公开(公告)号：US20160118264A1

公开(公告)日：2016-04-28

申请号：US14927700

申请日：2014-05-01

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuya KAMIMURA ,  Akiko KOYAMA ,  Satomi TAKAHASHI ,  Atsushi MIZUTANI ,  Yasuo SUGISHIMA

IPC: H01L21/306 ,  H01L21/324 ,  H01L21/02

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains an alkali compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供了一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含选自镍铂（NiPt），钛（Ti），镍（Ni））和至少一种特定金属元素的第二层 钴（Co），该方法包括：使包含碱性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。

公开(公告)号：US20230287304A1

公开(公告)日：2023-09-14

申请号：US18170195

申请日：2023-02-16

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Yasuo SUGISHIMA ,  Atsushi MIZUTANI

IPC: C11D3/34 ,  C11D3/30 ,  C11D3/00 ,  C11D1/34 ,  C11D1/04 ,  C11D1/14 ,  C11D11/00 ,  H01L21/02

CPC classification number: C11D3/3454 ,  C11D1/04 ,  C11D1/34 ,  C11D1/143 ,  C11D3/0026 ,  C11D3/30 ,  C11D3/0073 ,  C11D11/0047 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/32138

Abstract: An object of the present invention to provide a treatment liquid for a semiconductor device, where the treatment liquid has an excellent corrosion prevention property with respect to a metal-containing layer and excellent removability of an object to be removed, and also has excellent solubility in a post-treatment liquid. In addition, an object of the present invention is to provide a substrate treatment method using the treatment liquid.
The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which contains water, a removing agent, and a copolymer, and the copolymer has a first repeating unit having at least one group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit.

公开(公告)号：US20230159864A1

公开(公告)日：2023-05-25

申请号：US17850160

申请日：2020-12-24

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA

IPC: C11D7/06 ,  C11D7/50 ,  C11D7/10 ,  C11D7/16 ,  C11D7/32 ,  C11D7/26 ,  C11D7/34 ,  C11D7/36 ,  C11D11/00 ,  H01L21/02 ,  H01L21/3213

CPC classification number: C11D7/06 ,  C11D7/50 ,  C11D7/105 ,  C11D7/16 ,  C11D7/32 ,  C11D7/3245 ,  C11D7/265 ,  C11D7/34 ,  C11D7/36 ,  C11D7/3281 ,  C11D11/0047 ,  H01L21/02071 ,  H01L21/32134

Abstract: A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

公开(公告)号：US20140177081A1

公开(公告)日：2014-06-26

申请号：US14190841

申请日：2014-02-26

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Mitsuji YOSHIBAYASHI ,  Kaoru AOYAGI ,  Yushi KANEKO ,  Naotsugu MURO

IPC: G02B5/20

CPC classification number: G02B5/201 ,  G02B3/0006 ,  G02B5/20 ,  G02B5/223 ,  G02B5/286 ,  G02B13/0085 ,  G03F7/0007 ,  H01L27/14621 ,  H01L27/14685

Abstract: This disclosure relates to a method for manufacturing a color filter being capable of suppressing a surface of a colored pattern from being rough in a penalization treatment, a color filter and a solid-state imaging device.

Abstract translation: 本公开涉及一种制造滤色器的方法，该滤色器能够抑制有色图案的表面在惩罚处理中粗糙，滤色器和固态成像装置。

公开(公告)号：US20240400949A1

公开(公告)日：2024-12-05

申请号：US18800584

申请日：2024-08-12

Applicant: FUJIFILM Corporation

Inventor： Naoya SHIMOJU ,  Yasuo SUGISHIMA ,  Tomonori TAKAHASHI

IPC: C11D7/32 ,  C07C211/27 ,  C07C217/60 ,  C08F12/22 ,  C08F12/28 ,  C08F20/06 ,  C08F20/28 ,  C08F20/56 ,  C08F22/02 ,  C08F22/38 ,  C08F26/06 ,  C08F28/02 ,  C11D7/34 ,  H01L21/02

Abstract: The present invention provides a composition for a semiconductor device, where the composition is such that the removability of residues is excellent and the dissolution of tungsten is further suppressed. The composition for a semiconductor device contains a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom and water, where a ClogP of the polymerizable compound is 0.5 or more and a solubility of the resin in water at 25° C. is 0.01% by mass or more.

公开(公告)号：US20230212485A1

公开(公告)日：2023-07-06

申请号：US18158544

申请日：2023-01-24

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Atsushi MIZUTANI

IPC: C11D7/50 ,  C11D11/00 ,  C11D7/24 ,  C11D7/26 ,  C11D7/32 ,  H01L21/02

CPC classification number: C11D7/5022 ,  C11D7/244 ,  C11D7/261 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02057

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.
The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

公开(公告)号：US20160254139A1

公开(公告)日：2016-09-01

申请号：US15152676

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Yasuo SUGISHIMA ,  Atsushi MIZUTANI

IPC: H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  C11D7/26 ,  B08B3/04 ,  B08B3/10 ,  C11D11/00 ,  C11D7/32 ,  H01L21/3105 ,  B08B9/00

CPC classification number: H01L21/02057 ,  B08B3/041 ,  B08B3/08 ,  B08B3/10 ,  B08B7/0035 ,  B08B9/00 ,  C11D3/0073 ,  C11D3/3719 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/3776 ,  C11D7/261 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/823814 ,  H01L21/823857

Abstract: Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.

Abstract translation: 提供一种半导体衬底处理液，其从具有包含锗（Ge）的Ge含量层的半导体衬底或其表面清除半导体衬底的顶部上的有机材料，并且处理液体包括液体化学组分 其将处理液的pH调节至5〜16的范围，以及用于防止含Ge层的防腐蚀成分。

公开(公告)号：US20140211334A1

公开(公告)日：2014-07-31

申请号：US14227342

申请日：2014-03-27

Applicant: FUJIFILM Corporation

Inventor： Mitsuji YOSHIBAYASHI ,  Yasuo SUGISHIMA

IPC: B29D11/00 ,  G02B5/23

CPC classification number: B29D11/00634 ,  G02B5/201 ,  G02B5/23 ,  G02F1/133516 ,  G03F7/0007

Abstract: There is provided a pattern forming method, including: forming an organic film layer on a substrate; forming a patterned photoresist mask on the organic film layer; and performing a specific dry etching process to form a pattern on the organic layer.

Abstract translation: 提供了一种图案形成方法，包括：在基板上形成有机膜层; 在有机薄膜层上形成图案化的光致抗蚀剂掩模; 并执行特定的干蚀刻工艺以在有机层上形成图案。

公开(公告)号：US20220282182A1

公开(公告)日：2022-09-08

申请号：US17683241

申请日：2022-02-28

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA

IPC: C11D3/00 ,  H01L21/302 ,  C11D3/30

Abstract: The present invention provides a treatment liquid that exhibits excellent washing properties and improves the smoothness of an object to be treated in a case where the treatment liquid is used for treating an object to be treated containing a cobalt-containing substance. The present invention also provides a method for treating an object to be treated. The treatment liquid according to an embodiment of the present invention contains water, hydroxylamine, and three kinds of first anions consisting of Cl−, NO2−, and NO3−, in which a total content of the first anions is 0.0001 to 30 parts by mass with respect to 100 parts by mass of the hydroxylamine.