公开(公告)号：US10319873B2

公开(公告)日：2019-06-11

申请号：US14994830

申请日：2016-01-13

Applicant: First Solar, Inc.

Inventor： Rick C. Powell ,  Upali Jayamaha ,  Anke Abken ,  Markus Gloeckler ,  Akhlesh Gupta ,  Roger T. Green ,  Peter Meyers

IPC: H01L31/18 ,  H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0304

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.

公开(公告)号：US20180323332A1

公开(公告)日：2018-11-08

申请号：US16040173

申请日：2018-07-19

Applicant: First Solar, Inc.

Inventor： John Barden ,  Changming Jin ,  Feng Liao ,  Rick C. Powell ,  Gang Xiong

IPC: H01L31/18 ,  C23C14/58 ,  C23C14/02 ,  H01L21/677 ,  H01L21/67 ,  C23C14/22 ,  C23C14/06

CPC classification number: H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: A vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

公开(公告)号：US20170054052A1

公开(公告)日：2017-02-23

申请号：US15342533

申请日：2016-11-03

Applicant: FIRST SOLAR, INC

Inventor： Markus Gloeckler ,  Akhlesh Gupta ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/1864 ,  H01L21/02474 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02672 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0296 ,  H01L31/073

Abstract: A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract translation: 一种制造用于制造光伏器件的方法，包括具有卤化物热处理表面的半导体层，其增加至少一个半导体层内的晶粒生长并改善半导体层之间的界面。 卤化物热处理包括在邻近或部分半导体层的表面上施加和加热卤化物的多个涂层。

公开(公告)号：US09147792B2

公开(公告)日：2015-09-29

申请号：US13897915

申请日：2013-05-20

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Rick C. Powell ,  Gang Xiong

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/022441 ,  H01L31/056 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.

Abstract translation: 一种制造光伏器件的方法，包括将碲化镉层沉积到衬底上; 用包含氯和1-11，锌，汞或哥打尼碱或其组合的元素的化合物处理碲化镉层; 并对碲化镉层进行退火。 氯化物处理的光伏器件。

公开(公告)号：US20140261687A1

公开(公告)日：2014-09-18

申请号：US14209589

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Dan Damjanovic ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0296 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Abstract translation: 描述了完成的形成它的光伏器件和方法，其中通过存在牺牲助熔层来减轻窗口层进入吸收层的磁化。

公开(公告)号：US08785232B2

公开(公告)日：2014-07-22

申请号：US13945583

申请日：2013-07-18

Applicant: First Solar, Inc.

Inventor： Gang Xiong ,  Rick C. Powell ,  Aaron Roggelin ,  Kuntal Kumar ,  Arnold Allenic ,  Kenneth M. Ring ,  Charles E. Wickersham

IPC: H01L21/00

CPC classification number: H01L31/02963 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。

公开(公告)号：US20130203202A1

公开(公告)日：2013-08-08

申请号：US13754535

申请日：2013-01-30

Applicant: FIRST SOLAR, INC.

Inventor： Gang Xiong ,  John Barden ,  Feng Liao ,  Rick C. Powell ,  Changming Jin

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

Abstract translation: 蒸气输送沉积系统和方法，其包括蒸发器和分配器单元以及用于将薄膜层沉积与一个或多个沉积前或沉积后工艺集成的至少一个辅助处理单元。

公开(公告)号：US20130180579A1

公开(公告)日：2013-07-18

申请号：US13743440

申请日：2013-01-17

Applicant: FIRST SOLAR, INC

Inventor： Changming Jin ,  Xilin Peng ,  Rick C. Powell ,  Aaron Roggelin ,  Gang Xiong

IPC: H01L31/075 ,  H01L31/18

CPC classification number: H01L31/075 ,  H01L31/073 ,  H01L31/1828 ,  Y02E10/543

Abstract: A photovoltaic device having an absorber multilayer and methods of manufacturing the same are described. The absorber multilayer, which is formed adjacent to a window layer, may include a doped first cadmium telluride layer which contains a first dopant and an intrinsic second cadmium telluride layer. The absorber multilayer may further include at least a third cadmium telluride layer formed adjacent to a back contact. The at least third cadmium telluride layer may include doped or intrinsic cadmium telluride.

Abstract translation: 描述了具有吸收体多层的光电器件及其制造方法。 与窗口层相邻形成的吸收体多层可以包括掺杂的第一碲化镉层，其含有第一掺杂剂和本征的第二碲化镉层。 吸收体多层可以进一步包括至少一个邻近背面接触形成的第三碲化镉层。 至少第三碲化镉层可以包括掺杂或固有的碲化镉。

公开(公告)号：US09799784B2

公开(公告)日：2017-10-24

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

公开(公告)号：US20160300714A1

公开(公告)日：2016-10-13

申请号：US15095805

申请日：2016-04-11

Applicant: First Solar, Inc.

Inventor： Rick C. Powell

IPC: H01L21/02 ,  H01J37/32 ,  C23C14/32

CPC classification number: H01L21/02631 ,  C23C14/0629 ,  C23C14/32 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32623

Abstract: A method and apparatus for depositing a film on a substrate includes a plasma source positioned proximate to a distributor configured to provide a semiconductor coating on a substrate.

Abstract translation: 用于在衬底上沉积膜的方法和设备包括位于靠近分配器定位的等离子体源，其被配置为在衬底上提供半导体涂层。