公开(公告)号：US07851801B2

公开(公告)日：2010-12-14

申请号：US11963853

申请日：2007-12-24

Applicant: Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

Inventor： Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

IPC: H01L29/76

CPC classification number: H01L29/78696 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/4234 ,  H01L29/66757 ,  H01L29/66833 ,  H01L29/78675 ,  H01L29/792

Abstract: A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.

Abstract translation: 提供了适于布置在基板上的存储单元。 存储单元包括多晶硅岛，第一介电层，俘获层，第二介质层和控制栅极。 多硅岛设置在衬底上，并且包括源极区，漏极区和位于源极和漏极区之间的沟道区。 通道区域在其上具有多个规则排列的尖端。 第一介电层设置在多晶硅岛上。 捕获层设置在第一介电层上。 第二介质层设置在捕获层上。 控制栅极设置在第二电介质层上。 上述存储单元可以集成到LTPS-LCD面板或OLED面板中。

公开(公告)号：US20100265271A1

公开(公告)日：2010-10-21

申请号：US12497542

申请日：2009-07-02

Applicant: Shih-Meng Chang ,  Chia-Lin Liu ,  Chi-Neng Mo ,  Ke-Horng Chen ,  Chi-Lin Chen

Inventor： Shih-Meng Chang ,  Chia-Lin Liu ,  Chi-Neng Mo ,  Ke-Horng Chen ,  Chi-Lin Chen

IPC: G09G5/10

CPC classification number: H05B33/0818

Abstract: A driving circuit of a backlight module is provided. The driving circuit has a dimming unit used for transmitting signals, wherein the dimming unit can adjust a current flowing through a light-emitting diode (LED) according a pulse width modulation signal and an enable signal, so as to adjust a light-emitting intensity of the LED. In the present invention, fewer devices are used to implement the dimming unit, and a transmission gate is replaced by a N-type transistor and a P-type transistor, such that a chip area and a circuit cost of the driving circuit are reduced.

Abstract translation: 提供背光模块的驱动电路。 驱动电路具有用于发送信号的调光单元，其中调光单元可以根据脉宽调制信号和使能信号来调节流过发光二极管（LED）的电流，以便调节发光强度 的LED。 在本发明中，使用较少的器件来实现调光单元，并且传输门被N型晶体管和P型晶体管代替，使得驱动电路的芯片面积和电路成本降低。

公开(公告)号：US07795683B2

公开(公告)日：2010-09-14

申请号：US11561898

申请日：2006-11-21

Applicant: Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

Inventor： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

IPC: H01L29/04

CPC classification number: H01L21/268 ,  H01L21/28008 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

Abstract: A structure of a thin film transistor and a method for making the same are provided. The structure includes a strip-shaped silicon island, a gate, and a first and second ion doping regions. The strip-shaped silicon island is a thin film region with a predetermined long side and short side, and farther has a plurality of lateral grain boundaries substantially parallel to the short side of the silicon island. The gate is located over the silicon island and substantially parallel to the lateral grain boundaries. The first and second ion doping regions, used as source/drain regions of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate.

Abstract translation: 提供薄膜晶体管的结构及其制造方法。 该结构包括条形硅岛，栅极以及第一和第二离子掺杂区域。 带状硅岛是具有预定的长边和短边的薄膜区域，并且还具有基本上平行于硅岛短边的多个横向晶界。 栅极位于硅岛上方并且基本上平行于横向晶界。 用作TFT的源极/漏极区域的第一和第二离子掺杂区域位于岛的长边的两侧并且基本上垂直于栅极。

公开(公告)号：US20080188062A1

公开(公告)日：2008-08-07

申请号：US11701762

申请日：2007-02-02

Applicant: Chi-Lin Chen ,  Chin-Jen Huang

Inventor： Chi-Lin Chen ,  Chin-Jen Huang

IPC: H01L21/20

CPC classification number: H01L31/1824 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262 ,  Y02E10/545 ,  Y02P70/521

Abstract: A method capable of making a semiconductor device in a plasma-assisted chemical vapor deposition (CVD) system including a chamber having a first electrode and a second electrode spaced apart from one another, the method comprising providing a substrate on the second electrode, the substrate including a surface being exposed to the first electrode, forming a semiconductor film on the surface of the substrate and applying a first bias to the second electrode during a nucleation stage of the semiconductor film till a predetermined thickness of the semiconductor film is reached, and applying a second bias to the second electrode after the predetermined thickness of the semiconductor film is reached.

Abstract translation: 一种能够制造等离子体辅助化学气相沉积（CVD）系统中的半导体器件的方法，其包括具有彼此间隔开的第一电极和第二电极的腔室，所述方法包括在所述第二电极上提供衬底，所述衬底 包括暴露于所述第一电极的表面，在所述基板的表面上形成半导体膜，并且在所述半导体膜的成核阶段期间向所述第二电极施加第一偏压，直到达到所述半导体膜的预定厚度，并施加 在半导体膜的预定厚度达到之后，向第二电极施加第二偏压。

公开(公告)号：US07361566B2

公开(公告)日：2008-04-22

申请号：US11479895

申请日：2006-06-30

Applicant: Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

Inventor： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

IPC: H01L21/336

CPC classification number: H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

Abstract: A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

Abstract translation: 描述形成多晶硅薄膜晶体管的方法。 在基板上形成非晶硅薄膜晶体管，然后使用红外（IR）加热工艺。 栅极金属和源极/漏极金属被快速加热，并将热能传导到非晶硅层。 接下来，在非晶硅层中发生结晶以形成多晶硅。 因此，制造多晶硅薄膜晶体管。

公开(公告)号：US20070243670A1

公开(公告)日：2007-10-18

申请号：US11279933

申请日：2006-04-17

Applicant: Chi-Lin Chen ,  Po-Hao Tsai ,  Hung-Tse Chen ,  Yu-Cheng Chen ,  Jia-Xing Lin

Inventor： Chi-Lin Chen ,  Po-Hao Tsai ,  Hung-Tse Chen ,  Yu-Cheng Chen ,  Jia-Xing Lin

IPC: H01L21/84 ,  H01L21/20

CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78696

Abstract: A method for fabricating a thin film transistor (“TFT”) device includes providing a substrate, forming a patterned amorphous silicon layer over the substrate including a pair of first regions, a second region disposed between the pair of first regions, and at least one third region, each of which being disposed between and contiguous with the second region and each of the pair of first regions, the second region including a sub-region contiguous with each of the at least one third region, forming a heat retaining layer over the substrate, irradiating the patterned amorphous silicon layer with a laser through the heat retaining layer to form a patterned crystallized silicon layer corresponding to the patterned amorphous silicon layer including a grain boundary extending substantially across a crystallized sub-region corresponding to the sub-region, and forming a patterned conductive layer over a portion of a crystallized second region of the patterned crystallized silicon layer corresponding to the second region of the patterned amorphous silicon layer.

Abstract translation: 一种制造薄膜晶体管（“TFT”）器件的方法包括提供衬底，在衬底上形成图案化的非晶硅层，该衬底包括一对第一区域，设置在该对第一区域之间的第二区域和至少一个 第三区域，每个区域设置在第二区域之间并与第二区域和第一区域中的每一个相邻并且与第一区域中的每一个邻接，第二区域包括与至少一个第三区域中的每一个邻接的子区域， 衬底，通过所述保温层用激光照射所述图案化非晶硅层，以形成对应于所述图案化非晶硅层的图案化结晶硅层，所述图案化非晶硅层包括基本上跨越对应于所述子区域的结晶子区域延伸的晶界，以及 在图案化的结晶硅层对角结晶的第二区域的一部分上形成图案化的导电层 结合到图案化非晶硅层的第二区域。

公开(公告)号：US07215073B2

公开(公告)日：2007-05-08

申请号：US10673324

申请日：2003-09-30

Applicant: Yung-Hui Yeh ,  Chi-Lin Chen ,  Yu-Lung Liu ,  Ching-Hsuan Tang ,  Lung-Pin Hsin

Inventor： Yung-Hui Yeh ,  Chi-Lin Chen ,  Yu-Lung Liu ,  Ching-Hsuan Tang ,  Lung-Pin Hsin

IPC: H05B33/00 ,  H01L51/50

CPC classification number: H01L27/322 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5284

Abstract: The present invention discloses an active organic light emitting diode (AOLED) display structure. A color filter and thin film transistor organic light emitting diode (TFT-OLED) are incorporated on one substrate of the AOLED. Moreover, a Indium Tin Oxide(ITO)layer of the AOLED is deposited with a black matrix layer so as to lower light leakage effect and increase the contrast and color purity level in between pixels of the display. By adopting such technology, a flat panel display having large area, high resolution and low product cost is accordingly implemented.

Abstract translation: 本发明公开了一种有源有机发光二极管（AOLED）显示结构。 滤色器和薄膜晶体管有机发光二极管（TFT-OLED）结合在AOLED的一个基板上。 此外，AOLED的氧化铟锡（ITO）层沉积有黑矩阵层，以便降低漏光效应并增加显示器的像素之间的对比度和色纯度水平。 通过采用这种技术，可以实现面积大，分辨率高，产品成本低的平板显示器。

公开(公告)号：US20070054473A1

公开(公告)日：2007-03-08

申请号：US11226679

申请日：2005-09-14

Applicant: Jia-Xing Lin ,  Chi-Lin Chen

Inventor： Jia-Xing Lin ,  Chi-Lin Chen

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78645

Abstract: A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.

Abstract translation: 一种制造半导体器件的方法包括提供衬底，在衬底上形成非晶硅层，在非晶硅层上形成保温层，图案化保温层，并照射图案化保温层。

公开(公告)号：US07094656B2

公开(公告)日：2006-08-22

申请号：US10733721

申请日：2003-12-11

Applicant: Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

Inventor： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

IPC: H01L21/336

CPC classification number: H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

Abstract: A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

Abstract translation: 描述形成多晶硅薄膜晶体管的方法。 在基板上形成非晶硅薄膜晶体管，然后使用红外（IR）加热工艺。 栅极金属和源极/漏极金属被快速加热，并将热能传导到非晶硅层。 接下来，在非晶硅层中发生结晶以形成多晶硅。 因此，制造多晶硅薄膜晶体管。

公开(公告)号：US06982195B2

公开(公告)日：2006-01-03

申请号：US10780589

申请日：2004-02-19

Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

IPC: H01L21/84

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

Abstract: An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The reflective layer is a metal material with reflectivity of laser, and the protective layer is able to prevent metal diffusion. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer under the film stack of the protective layer and the reflective layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer to form poly-silicon having crystal grains with size of micrometers and high grain order.

Abstract translation: 在基板上形成非晶硅层，然后依次形成保护层和反射层，以在非晶硅层的部分上形成膜堆叠。 反射层是具有激光反射率的金属材料，保护层能够防止金属扩散。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在保护层和反射层的膜堆叠下面的非晶硅层中形成成核位置。 接下来，在非晶硅层中发生横向膨胀结晶，形成晶粒大小为微米，晶粒度高的多晶硅。