中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.015 seconds)

    Method of direct deposition of polycrystalline silicon
    1.
    发明申请
    Method of direct deposition of polycrystalline silicon 有权
    直接沉积多晶硅的方法

    公开(公告)号：US20070105373A1

    公开(公告)日：2007-05-10

    申请号：US11270862

    申请日：2005-11-09

    Applicant: Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    Inventor： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    IPC: H01L21/44

    CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0262 ,  H01L27/1214

    Abstract: A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.

    Abstract translation: 一种在等离子体辅助化学气相沉积（CVD）系统中形成多晶硅膜的方法，包括：设置有与第一电极间隔开的第一电极和第二电极的腔室，包括在第二电极上设置衬底， 包括暴露于第一电极的表面，向第一电极施加第一功率以在腔室中产生等离子体，在用于离子轰击衬底表面的多晶硅膜的成核阶段期间向第二电极施加第二功率， 并将侵蚀性气体流入室内。

    Method of direct deposition of polycrystalline silicon
    2.
    发明授权
    Method of direct deposition of polycrystalline silicon 有权
    直接沉积多晶硅的方法

    公开(公告)号：US07521341B2

    公开(公告)日：2009-04-21

    申请号：US11270862

    申请日：2005-11-09

    Applicant: Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    Inventor： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    IPC: H01L21/36

    CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0262 ,  H01L27/1214

    Abstract: A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.

    Abstract translation: 一种在等离子体辅助化学气相沉积（CVD）系统中形成多晶硅膜的方法，包括：设置有与第一电极间隔开的第一电极和第二电极的腔室，包括在第二电极上设置衬底， 包括暴露于第一电极的表面，向第一电极施加第一功率以在腔室中产生等离子体，在用于离子轰击衬底表面的多晶硅膜的成核阶段期间，向第二电极施加第二功率， 并将侵蚀性气体流入室内。

    Method of forming microcrystalline silicon film
    3.
    发明申请
    Method of forming microcrystalline silicon film 审中-公开
    形成微晶硅膜的方法

    公开(公告)号：US20080188062A1

    公开(公告)日：2008-08-07

    申请号：US11701762

    申请日：2007-02-02

    Applicant: Chi-Lin Chen ,  Chin-Jen Huang

    Inventor： Chi-Lin Chen ,  Chin-Jen Huang

    IPC: H01L21/20

    CPC classification number: H01L31/1824 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262 ,  Y02E10/545 ,  Y02P70/521

    Abstract: A method capable of making a semiconductor device in a plasma-assisted chemical vapor deposition (CVD) system including a chamber having a first electrode and a second electrode spaced apart from one another, the method comprising providing a substrate on the second electrode, the substrate including a surface being exposed to the first electrode, forming a semiconductor film on the surface of the substrate and applying a first bias to the second electrode during a nucleation stage of the semiconductor film till a predetermined thickness of the semiconductor film is reached, and applying a second bias to the second electrode after the predetermined thickness of the semiconductor film is reached.

    Abstract translation: 一种能够制造等离子体辅助化学气相沉积（CVD）系统中的半导体器件的方法，其包括具有彼此间隔开的第一电极和第二电极的腔室，所述方法包括在所述第二电极上提供衬底，所述衬底 包括暴露于所述第一电极的表面，在所述基板的表面上形成半导体膜，并且在所述半导体膜的成核阶段期间向所述第二电极施加第一偏压，直到达到所述半导体膜的预定厚度，并施加 在半导体膜的预定厚度达到之后，向第二电极施加第二偏压。

    METHOD FOR FABRICATING FLEXIBLE PIXEL ARRAY SUBSTRATE
    5.
    发明申请
    METHOD FOR FABRICATING FLEXIBLE PIXEL ARRAY SUBSTRATE 有权
    用于制造柔性像素阵列基板的方法

    公开(公告)号：US20090269874A1

    公开(公告)日：2009-10-29

    申请号：US12487657

    申请日：2009-06-19

    Applicant: Chin-Jen Huang ,  Jung-Fang Chang ,  Yih-Rong Luo ,  Yu-Hung Chen

    Inventor： Chin-Jen Huang ,  Jung-Fang Chang ,  Yih-Rong Luo ,  Yu-Hung Chen

    IPC: H01L33/00

    CPC classification number: H01L51/56 ,  G02F1/133305 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5253 ,  H01L2227/326 ,  Y02E10/549

    Abstract: In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.

    Abstract translation: 在柔性像素阵列基板的制造方法中，首先，在刚性基板上形成剥离层。 接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。 聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。 之后，在聚合物膜上形成像素阵列。 其上形成有像素阵列的聚合物膜与刚性基板分离。

    Method for fabricating flexible pixel array substrate
    8.
    发明授权
    Method for fabricating flexible pixel array substrate 有权
    制造柔性像素阵列基板的方法

    公开(公告)号：US07807551B2

    公开(公告)日：2010-10-05

    申请号：US12487657

    申请日：2009-06-19

    Applicant: Chin-Jen Huang ,  Jung-Fang Chang ,  Yih-Rong Luo ,  Yu-Hung Chen

    Inventor： Chin-Jen Huang ,  Jung-Fang Chang ,  Yih-Rong Luo ,  Yu-Hung Chen

    IPC: H01L21/46

    CPC classification number: H01L51/56 ,  G02F1/133305 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5253 ,  H01L2227/326 ,  Y02E10/549

    Abstract: In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.

    Abstract translation: 在柔性像素阵列基板的制造方法中，首先，在刚性基板上形成剥离层。 接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。 聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。 之后，在聚合物膜上形成像素阵列。 其上形成有像素阵列的聚合物膜与刚性基板分离。

Patent Agency Ranking