公开(公告)号：US11114736B2

公开(公告)日：2021-09-07

申请号：US16835303

申请日：2020-03-31

Applicant: GLOBALFOUNDRIES INC.

Inventor： See Taur Lee ,  Sher Jiung Fang ,  Abdellatif Bellaouar

IPC: H03K5/01 ,  H01P5/12 ,  H03K17/687 ,  H03F3/24 ,  H01P11/00 ,  H03K5/00

Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.

公开(公告)号：US10924058B2

公开(公告)日：2021-02-16

申请号：US16801667

申请日：2020-02-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Abdellatif Bellaouar ,  Arul Balasubramaniyan

IPC: H03B1/02 ,  H01P5/16 ,  H03H11/36 ,  H03B5/12 ,  G06F1/10 ,  H04B1/38 ,  H04B1/525 ,  H01P5/12

Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

公开(公告)号：US10749473B2

公开(公告)日：2020-08-18

申请号：US15966747

申请日：2018-04-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Abdellatif Bellaouar ,  Arul Balasubramaniyan

IPC: H03B19/00 ,  H03B19/06 ,  H03B19/10 ,  H03B19/14 ,  H03K5/00

Abstract: An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in −phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.

公开(公告)号：US20200228149A1

公开(公告)日：2020-07-16

申请号：US16833663

申请日：2020-03-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Abdellatif Bellaouar ,  Sher Jiun Fang ,  Frank Zhang

IPC: H04B1/00 ,  H04B1/16 ,  H03L7/099 ,  H03F3/195 ,  H03G3/30

Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

公开(公告)号：US10432179B1

公开(公告)日：2019-10-01

申请号：US15928910

申请日：2018-03-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： See Taur Lee ,  Abdellatif Bellaouar

IPC: H03K5/00 ,  H03K17/687 ,  H03D7/14 ,  H03K19/21 ,  H01L27/12 ,  G01S7/03 ,  H01L23/66 ,  H01L21/84 ,  G01S13/93 ,  G01S7/35 ,  H01L29/78

Abstract: We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.

公开(公告)号：US20190296700A1

公开(公告)日：2019-09-26

申请号：US15933542

申请日：2018-03-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： See T. Lee ,  Abdellatif Bellaouar

IPC: H03F1/56 ,  H03B5/12 ,  H03F3/193 ,  H03F3/24

Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

公开(公告)号：US10211825B2

公开(公告)日：2019-02-19

申请号：US15616527

申请日：2017-06-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Abdellatif Bellaouar

IPC: H04B1/44 ,  H03K17/16 ,  H01L23/66 ,  H03F3/195 ,  H03F3/21 ,  H01L29/78 ,  H01L27/12 ,  H03F3/213 ,  H01L49/02 ,  H01L21/84

Abstract: Electronic circuits with a switch and methods for operating a switch in an electronic circuit. A first amplifier is coupled by a first path with an antenna. A second amplifier is coupled by a second path with the antenna. A transistor is coupled with the first path at a node. The first transistor includes a back gate. A back-gate bias circuit is coupled with the back gate of the first transistor. The back-gate bias circuit is configured to supply a bias voltage to the back gate of the first transistor that lowers a threshold voltage of the transistor.

公开(公告)号：US10038413B2

公开(公告)日：2018-07-31

申请号：US15377580

申请日：2016-12-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： See Taur Lee ,  Abdellatif Bellaouar

IPC: H03F1/34 ,  H03F1/52 ,  H03F1/22 ,  H03F3/195 ,  H03F3/213 ,  H03F3/45 ,  H03F3/30 ,  H03F1/30

CPC classification number: H03F1/523 ,  H03F1/22 ,  H03F1/307 ,  H03F3/195 ,  H03F3/213 ,  H03F3/265 ,  H03F3/3022 ,  H03F3/45 ,  H03F3/45071 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2200/451 ,  H03F2203/45154 ,  H03F2203/45228 ,  H03F2203/45311 ,  H03F2203/45481 ,  H03F2203/45662 ,  H03F2203/45686 ,  H03F2203/45731

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices.

公开(公告)号：US10014828B1

公开(公告)日：2018-07-03

申请号：US15659352

申请日：2017-07-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： See Lee ,  Abdellatif Bellaouar

IPC: H04B1/28 ,  H03F1/02 ,  H03F1/32 ,  H03F3/24 ,  H04W52/18 ,  H04L27/36

CPC classification number: H03F1/0255 ,  H03F1/0272 ,  H03F1/3205 ,  H03F3/24 ,  H03F3/245 ,  H03F3/50 ,  H03F2200/123 ,  H04L27/366 ,  H04W52/18

Abstract: Embodiments of the present disclosure provide a transmitter system including: a source follower (SF) sub-stage having a pair of transistors, one being coupled to a biasing voltage at a gate terminal thereof, and the other including a fully depleted semiconductor on insulator (FDSOI) transistor coupled to an input signal at a gate terminal thereof, and coupled to a calibration voltage at a back-gate terminal thereof. A mixer sub-stage includes a mixer input node coupled to the SF output node of the pair of transistors of the SF sub-stage, and the mixer input node is electrically coupled in parallel to two FDSOI mixer transistors, with the FDSOI mixer transistor being electrically coupled to a respective back-gate voltage. The FDSOI mixer transistors each include a gate terminal coupled to an input voltage, while a second source/drain terminal of the FDSOI mixer transistors are each electrically coupled to a mixer output node.

公开(公告)号：US10608582B2

公开(公告)日：2020-03-31

申请号：US15966661

申请日：2018-04-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Abdellatif Bellaouar ,  Arul Balasubramaniyan

IPC: H04B1/02 ,  H01P5/16 ,  H03H11/36 ,  H03B5/12 ,  G06F1/10 ,  H04B1/38 ,  H04B1/525 ,  H01P5/12 ,  H03B1/02

Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.