Apparatus for spatial and temporal control of temperature on a substrate
    21.
    发明授权
    Apparatus for spatial and temporal control of temperature on a substrate 有权
    用于空间和时间控制基板上的温度的装置

    公开(公告)号:US08821639B2

    公开(公告)日:2014-09-02

    申请号:US13235961

    申请日:2011-09-19

    IPC分类号: B23K10/00 H05K3/30 H01R12/00

    摘要: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.

    摘要翻译: 用于控制基板的温度的装置具有温度控制的基座,加热器,金属板,电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性,并具有设计用于平衡加热器的热能和外部工艺的物理性能,以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。

    Plasma chamber top piece assembly
    22.
    发明授权
    Plasma chamber top piece assembly 有权
    等离子室顶部组件

    公开(公告)号:US08540843B2

    公开(公告)日:2013-09-24

    申请号:US12861769

    申请日:2010-08-23

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    摘要: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system. The top piece coupled to the bottom piece and at least partially covered by the cover, the top piece comprising a first shelf, a second shelf, and a wall; the wall being disposed between the first shelf and the second shelf; a cavity being formed between the first shelf and the second shelf, and between the wall and a portion of the cover; the heating and cooling system being disposed inside the cavity; Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the top piece, and the top piece substantially complies with a set of SEMI ergonomic safety standards for a part handled by a single person.

    摘要翻译: 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件,其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场的感应线圈,以便产生用于处理衬底的等离子体。 等离子体处理系统还包括至少覆盖感应线圈和加热和冷却系统的盖。 所述顶部件联接到所述底部件并且至少部分地被所述盖子覆盖,所述顶部件包括第一搁板,第二搁板和壁; 所述壁布置在所述第一搁架和所述第二搁架之间; 在所述第一搁板和所述第二搁板之间以及所述壁与所述盖的一部分之间形成空腔; 所述加热和冷却系统设置在所述空腔内; 其中,加热和冷却系统通过顶部件基本上与电磁场屏蔽,并且顶部件基本上符合由单个人处理的部件的一组SEMI符合人体工程学的安全标准。

    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
    23.
    发明申请
    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 有权
    具有用于半导体加工的平面热区的热板

    公开(公告)号:US20130072035A1

    公开(公告)日:2013-03-21

    申请号:US13238396

    申请日:2011-09-21

    IPC分类号: H01L21/30 H01C17/02 H05B3/68

    摘要: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.

    摘要翻译: 一种用于半导体等离子体处理装置中的衬底支撑组件的热板,包括以可伸缩复用布局布置的多个可独立控制的平面热区,以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域,正,负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

    HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
    24.
    发明申请
    HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 有权
    具有二极管平面加热器的加热板用于半导体加工

    公开(公告)号:US20130068750A1

    公开(公告)日:2013-03-21

    申请号:US13237444

    申请日:2011-09-20

    IPC分类号: H05B3/68

    摘要: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.

    摘要翻译: 一种用于半导体等离子体处理设备中的基板支撑组件的加热板,包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域,以及用于独立地控制和供电平面加热器区域的电子装置。 每个平面加热器区域使用至少一个二极管作为加热器元件。 其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。 制造加热板的方法包括将具有平面加热区,电源线,电源返回线和通孔的陶瓷或聚合物片粘合在一起。

    Electrode for Use in Measuring Dielectric Properties of Parts
    26.
    发明申请
    Electrode for Use in Measuring Dielectric Properties of Parts 有权
    用于测量零件介电性能的电极

    公开(公告)号:US20090091341A1

    公开(公告)日:2009-04-09

    申请号:US12240329

    申请日:2008-09-29

    IPC分类号: G01R27/08 H01R43/00

    摘要: A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.

    摘要翻译: 由导电材料形成厚度基本均匀的板。 该板具有限定为支撑要测量的部分的顶表面。 该板具有限定为连接到射频(RF)传输杆的底表面,使得RF功率可以通过RF传输杆传递到板。 板被限定为当该部件位于板的顶表面上时,在相应数量的位置处垂直地切割许多孔,该位置位于待测量部件中的被测量部件中的嵌入的导电材料物品的位置。

    Method of tuning thermal conductivity of electrostatic chuck support assembly
    27.
    发明授权
    Method of tuning thermal conductivity of electrostatic chuck support assembly 有权
    调整静电卡盘支撑组件的导热性的方法

    公开(公告)号:US07501605B2

    公开(公告)日:2009-03-10

    申请号:US11511367

    申请日:2006-08-29

    IPC分类号: H05B1/02

    摘要: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

    摘要翻译: 调整静电卡盘(ESC)支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度,其中每个部位与给定的电池相关联,从测量中确定任何部分面积的减小 建议每个电池,并根据建议的分数还原从每个电池中的支撑组件表面去除材料,以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性,或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此,热导率调节可以通过包括限定单元结构,确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔,布线,激光加工或砂粒加工可以实现材料去除。

    Quartz guard ring centering features
    28.
    发明申请
    Quartz guard ring centering features 有权
    石英护环中心功能

    公开(公告)号:US20080099120A1

    公开(公告)日:2008-05-01

    申请号:US11701507

    申请日:2007-02-02

    IPC分类号: B31B1/60

    摘要: An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

    摘要翻译: 一种电极组件和使外环围绕用于半导体衬底处理的等离子体反应室中的电极组件对中的方法。 该方法包括将外环围绕电极组件的背衬构件的外表面定位,并且在外环和背衬构件之间插入至少一个定心元件。 定心元件可以是容纳在背衬构件的外表面上的空腔中的多个弹簧加载的定心元件,定心元件具有适于接触外圈的第一端和适于容纳弹簧的第二端。 外环围绕背衬构件的外表面,使得多个弹簧加载的定心元件位于背衬构件的外表面和外环的内表面之间。

    Heating plate with diode planar heater zones for semiconductor processing
    30.
    发明授权
    Heating plate with diode planar heater zones for semiconductor processing 有权
    加热板带二极管平面加热器区域用于半导体加工

    公开(公告)号:US08624168B2

    公开(公告)日:2014-01-07

    申请号:US13237444

    申请日:2011-09-20

    IPC分类号: H05B3/68 H05B3/02

    摘要: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.

    摘要翻译: 一种用于半导体等离子体处理设备中的基板支撑组件的加热板,包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域,以及用于独立地控制和供电平面加热器区域的电子装置。 每个平面加热器区域使用至少一个二极管作为加热器元件。 其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。 制造加热板的方法包括将具有平面加热区,电源线,电源返回线和通孔的陶瓷或聚合物片接合在一起。