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公开(公告)号：US06184128B2
公开(公告)日：2001-02-06
申请号：US09497222
申请日：2000-01-31
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： H01L214763
CPC分类号： H01L21/7681 , H01L21/31144
摘要： In one embodiment, the present invention relates to a dual damascene method involving the steps of providing a substrate having a first low k material layer; forming a first hard mask layer over the first low k material layer; patterning a first opening having a first width in the first hard mask layer using a first photoresist thereby exposing a portion of the first low k material layer; removing the first photoresist; depositing a second low k material layer over the patterned first hard mask layer and the exposed portion of the first low k material layer; forming a second hard mask layer over the second low k material layer; patterning a second opening having a width larger than the first width in the second hard mask layer using a second photoresist thereby exposing a portion of the second low k material layer; anisotropically etching the exposed portions of the first and second low k material layers; and removing the second photoresist, wherein and at least one of the first photoresist and the second photoresist have a thickness of about 1,500 Å or less.
摘要翻译： 在一个实施例中，本发明涉及一种双镶嵌方法，包括以下步骤：提供具有第一低k材料层的基底; 在所述第一低k材料层上形成第一硬掩模层; 使用第一光致抗蚀剂构图在第一硬掩模层中具有第一宽度的第一开口，从而暴露第一低k材料层的一部分; 去除第一光致抗蚀剂; 在图案化的第一硬掩模层和第一低k材料层的暴露部分上沉积第二低k材料层; 在所述第二低k材料层上形成第二硬掩模层; 使用第二光致抗蚀剂构图在第二硬掩模层中形成具有大于第一宽度的宽度的第二开口，从而暴露第二低k材料层的一部分; 各向异性地蚀刻第一和第二低k材料层的暴露部分; 并且去除所述第二光致抗蚀剂，其中所述第一光致抗蚀剂和所述第二光致抗蚀剂中的至少一个具有大约等于或小于1500埃的厚度。
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公开(公告)号：US6098408A
公开(公告)日：2000-08-08
申请号：US189228
申请日：1998-11-11
申请人： Harry J. Levinson , Khanh B. Nguyen
发明人： Harry J. Levinson , Khanh B. Nguyen
CPC分类号： G03F7/707 , F25B21/02 , G03F7/70283 , G03F7/70875 , G05D23/1919 , G05D23/1934 , G05D23/24 , Y02B30/765
摘要： A system for regulating reticle temperature is provided. The system includes a reticle for use in a lithographic process and a chuck assembly for supporting the reticle. The chuck assembly includes: a backplate having front and back surfaces, the front surface engaging with a backside of the reticle; and a thermoelectric cooling system operatively coupled to the backplate for regulating temperature of at least a portion of the reticle via heat conduction through the backplate. The chuck assembly also includes a temperature sensing system coupled to the backplate for sensing temperature of at least a portion of the reticle via heat conduction through the backplate; and a heat sink operatively coupled to the thermoelectric cooling system. A voltage driver operatively is coupled to the thermoelectric cooling system, the voltage driver provides a bias voltage to drive the thermoelectric cooling system. A processor is operatively coupled to the voltage driver, the processor employing the voltage driver in controlling the thermoelectric cooling system.
摘要翻译： 提供了一种用于调节掩模版温度的系统。 该系统包括用于光刻工艺的掩模版和用于支撑掩模版的卡盘组件。 卡盘组件包括：背板，其具有前表面和后表面，前表面与掩模版的背面接合; 以及可操作地耦合到所述背板的热电冷却系统，用于通过所述背板的热传导来调节所述掩模版的至少一部分的温度。 卡盘组件还包括耦合到背板的温度感测系统，用于通过背板的热传导来感测至少一部分光罩的温度; 以及可操作地耦合到热电冷却系统的散热器。 电压驱动器可操作地耦合到热电冷却系统，电压驱动器提供偏置电压来驱动热电冷却系统。 处理器可操作地耦合到电压驱动器，处理器采用电压驱动器来控制热电冷却系统。
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公开(公告)号：US09632972B1
公开(公告)日：2017-04-25
申请号：US13482525
申请日：2012-05-29
申请人： Emily K. Moxley , Vinod Anupam , Hobart Sze , Dani Suleman , Khanh B. Nguyen
发明人： Emily K. Moxley , Vinod Anupam , Hobart Sze , Dani Suleman , Khanh B. Nguyen
IPC分类号： G06F15/16
CPC分类号： G06F15/16 , G06Q30/0269 , G06Q50/01
摘要： Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for determining influence in a social community. In one aspect, a method includes identifying a user in a community; determining an influence score to be associated with the user in the community for a particular topic, including: determining a reach of one or more communications that relate to the particular topic that have been distributed from the user to other users in the community, and evaluating the reach as compared to the reach of one or more communications distributed from other users in the community for the particular topic; and storing the influence score in association with the user.
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24.发明授权Ultra-thin resist shallow trench process using high selectivity nitride etch 有权使用高选择性氮化物蚀刻的超薄抗蚀剂浅沟槽工艺公开(公告)号：US06740566B2
公开(公告)日：2004-05-25
申请号：US09398641
申请日：1999-09-17
申请人： Christopher F. Lyons , Scott A. Bell , Harry J. Levinson , Khanh B. Nguyen , Fei Wang , Chih Yuh Yang
发明人： Christopher F. Lyons , Scott A. Bell , Harry J. Levinson , Khanh B. Nguyen , Fei Wang , Chih Yuh Yang
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： In one embodiment, the present invention relates to a method of forming a shallow trench, involving the steps of providing a semiconductor substrate comprising a barrier oxide layer over at the semiconductor substrate and a nitride layer over the barrier oxide layer; depositing an ultra-thin photoresist over the nitride layer, the ultra-thin photoresist having a thickness of about 2,000 Å or less; patterning the ultra-thin photoresist to expose a portion of the nitride layer and to define a pattern for the shallow trench; etching the exposed portion of the nitride layer with an etchant having a nitride:photoresist selectivity of at least about 10:1 to expose a portion of the barrier oxide layer; etching the exposed portion of the barrier oxide layer to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to provide the shallow trench. In another embodiment, the method further involves depositing an insulating filler material into the shallow trench to provide a shallow trench isolation region.
摘要翻译： 在一个实施例中，本发明涉及一种形成浅沟槽的方法，包括以下步骤：在半导体衬底上提供包括阻挡氧化物层的半导体衬底，以及在阻挡氧化物层上方的氮化物层; 在所述氮化物层上沉积超薄光致抗蚀剂，所述超薄光致抗蚀剂具有约2,000或更小的厚度; 图案化超薄光致抗蚀剂以暴露氮化物层的一部分并且限定用于浅沟槽的图案; 用具有至少约10:1的氮化物：光致抗蚀剂选择性的蚀刻剂蚀刻氮化物层的暴露部分以暴露部分阻挡氧化物层; 蚀刻阻挡氧化物层的暴露部分以暴露半导体衬底的一部分; 并蚀刻半导体衬底的暴露部分以提供浅沟槽。 在另一个实施例中，该方法还包括将绝缘填充材料沉积到浅沟槽中以提供浅沟槽隔离区域。
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公开(公告)号：US06171763B2
公开(公告)日：2001-01-09
申请号：US09204651
申请日：1998-12-02
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： G03F700
CPC分类号： H01L21/32139 , G03F7/094 , G03F7/40 , G03F7/405 , H01L21/32136
摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, a silicon nitride layer over the metal layer, and an oxide layer over the silicon nitride layer; depositing an ultra-thin photoresist over the oxide layer, the ultra-thin photoresist having a thickness less than about 2,000 Å; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.
摘要翻译： 在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包括金属层的半导体衬底，金属层上的氮化硅层和氮化硅层上的氧化物层; 在所述氧化物层上沉积超薄光致抗蚀剂，所述超薄光致抗蚀剂具有小于约的厚度; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露一部分氧化物层的超薄光刻胶; 蚀刻暴露出氮化硅层的一部分的氧化物层的暴露部分; 蚀刻暴露出金属层的一部分的氮化硅层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。
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公开(公告)号：US06048652A
公开(公告)日：2000-04-11
申请号：US205791
申请日：1998-12-04
申请人： Khanh B. Nguyen , Craig Sander
发明人： Khanh B. Nguyen , Craig Sander
摘要： A method (100) of forming a reflective reticle blank includes forming (106) a reflective layer (108) over a flat substrate (104) and coupling a low thermal expansion material (112) to the reflective layer (108). After coupling the low thermal expansion material (112) to the reflective layer (108), the flat substrate (104) is removed. By forming the reflective layer (108) on the flat substrate (104), a low-defect, high reflectivity reflective layer (108) is formed. In addition, by removing the flat substrate (104), the reticle blank uses the low thermal expansion material (112) as substrate and exhibits minimized distortion during processing due to its low thermal expansion material.
摘要翻译： 形成反射标线坯料的方法（100）包括在平坦基板（104）上形成（106）反射层（108）并将低热膨胀材料（112）耦合到反射层（108）。 在将低热膨胀材料（112）耦合到反射层（108）之后，去除平坦基板（104）。 通过在平坦基板（104）上形成反射层（108），形成低缺陷高反射层（108）。 此外，通过去除平坦基板（104），掩模版坯料使用低热膨胀材料（112）作为基板，并且由于其低热膨胀材料而在加工过程中表现出最小的失真。
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公开(公告)号：US6020269A
公开(公告)日：2000-02-01
申请号：US203461
申请日：1998-12-02
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： H01L21/3213 , H01L21/302
CPC分类号： H01L21/32139
摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon nitride layer over the oxide layer; depositing an ultra-thin photoresist over the silicon nitride layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.
摘要翻译： 在一个实施方案中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包含金属层的半导体衬底，金属层上的氧化物层和氧化物层上的氮化硅层; 在氮化硅层上沉积超薄光致抗蚀剂，超薄光致抗蚀剂的厚度小于约2,000安培; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露氮化硅层的一部分的超薄光刻胶; 蚀刻暴露出氧化物层的一部分的氮化硅层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。
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公开(公告)号：US09264484B1
公开(公告)日：2016-02-16
申请号：US13024274
申请日：2011-02-09
申请人： Emily K. Moxley , Vinod Anupam , Hobart Sze , Dani Suleman , Khanh B. Nguyen
发明人： Emily K. Moxley , Vinod Anupam , Hobart Sze , Dani Suleman , Khanh B. Nguyen
摘要： Methods, systems, and apparatus, including computer programs encoded on a computer-readable storage medium, for providing content, comprising: identifying a social action that includes a preference designation for an object; determining a location of an individual user associated with the social action or a location associated with the object that is the subject of the preference designation; attributing the preference designation to both the location and to the individual user, where the attributed preference designation can be used to target further content to either the individual user or other users; and receiving a request for content that is related to the location and providing, responsive to the request, one or more content items based on the attributed preference designations.
摘要翻译： 方法，系统和装置，包括在计算机可读存储介质上编码的用于提供内容的计算机程序，包括：识别包括对象的偏好指定的社会动作; 确定与所述社会动作相关联的个人用户的位置或与作为所述偏好指定的对象的对象相关联的位置; 将偏好指定归因于位置和个体用户，其中可以使用归属偏好指定来将另外的内容定向到单个用户或其他用户; 以及接收与所述位置相关的内容的请求，并且响应于所述请求提供基于归因的偏好设计的一个或多个内容项。
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公开(公告)号：US20120036024A1
公开(公告)日：2012-02-09
申请号：US12852360
申请日：2010-08-06
IPC分类号： G06Q30/00
CPC分类号： G06Q30/02 , G06Q30/0275 , G06Q30/08
摘要： In general, first bids associated with an ad request are identified, where the first bids have an auction value that is set at a bidding time. Second bids associated with the ad request are identified, where the second bids have an auction value that is unknown at the bidding time. One or more predicted auction values for the second bids are determined, and an auction is run to identify one or more winning bids from the first and second bids for satisfying the ad request.
摘要翻译： 通常，识别与广告请求相关联的第一个出价，其中第一个出价具有在出价时间设置的拍卖价值。 确定与广告请求相关联的第二个出价，其中第二个出价的竞价价值在出价时间未知。 确定用于第二投标的一个或多个预测的拍卖价值，并且进行拍卖以从用于满足广告请求的第一和第二投标中识别一个或多个获胜投标。
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公开(公告)号：US06544885B1
公开(公告)日：2003-04-08
申请号：US09706498
申请日：2000-11-03
申请人： Khanh B. Nguyen , Harry J. Levinson , Christopher F. Lyons , Scott A. Bell , Fei Wang , Chih Yuh Yang
发明人： Khanh B. Nguyen , Harry J. Levinson , Christopher F. Lyons , Scott A. Bell , Fei Wang , Chih Yuh Yang
IPC分类号： H01L2358
CPC分类号： H01L21/76895 , H01L21/32139 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： A method of forming a conductor pattern on a base with uneven topography includes placing conductor material on the base, placing a hard mask material on the conductor material, planarizing an exposed surface of the hard mask material, and placing a layer of resist on the hard mask material. The resist is patterned and the patterned resist is used in selectively etching the hard mask material, with the hard mask material used in selectively etching the underlying conductor material. By planarizing the hard mask material prior to placing a layer of resist thereupon, uniformity of the resist coating is enhanced and depth of focus problems in exposing the resist are reduced.
摘要翻译： 在具有不平坦的地形的基底上形成导体图案的方法包括将导体材料放置在基底上，将硬掩模材料放置在导体材料上，平坦化硬掩模材料的暴露表面，以及将一层抗蚀剂放置在硬 面具材料。 抗蚀剂被图案化，并且图案化的抗蚀剂用于选择性地蚀刻硬掩模材料，其中硬掩模材料用于选择性蚀刻下面的导体材料。 通过在放置一层抗蚀剂之前对硬掩模材料进行平面化，抗蚀剂涂层的均匀性得到提高，并且降低了曝光抗蚀剂的焦点深度问题。
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