公开(公告)号：US20090142912A1

公开(公告)日：2009-06-04

申请号：US12327939

申请日：2008-12-04

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/3205

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： A method of manufacturing a thin film semiconductor device that includes forming a thin film transistor on a substrate, forming a layer insulation film on the substrate, the layer insulation film containing no hydroxyl group in at least a film constituting a lowermost layer in the state of covering said thin film transistor and linking oxygen or hydrogen to dangling bonds in the semiconductor thin film constituting the thin film transistor by a heat treatment in a moisture atmosphere after the formation of the layer insulation film.

摘要翻译： 一种制造薄膜半导体器件的方法，其包括在衬底上形成薄膜晶体管，在衬底上形成层绝缘膜，在至少构成最下层的膜中的不含羟基的层绝缘膜处于 覆盖所述薄膜晶体管，并且在形成层间绝缘膜之后通过在潮湿气氛中的热处理将氧或氢连接到构成薄膜晶体管的半导体薄膜中的悬空键。

公开(公告)号：US20080182368A1

公开(公告)日：2008-07-31

申请号：US12007302

申请日：2008-01-09

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/336

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78648

摘要： Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.

摘要翻译： 本发明公开了一种制造薄膜半导体器件的方法，该方法包括：在衬底上形成栅电极的第一步骤，在衬底上形成氮氧化硅栅极绝缘膜的第二步骤， 覆盖栅电极，在栅极绝缘膜上形成半导体薄膜的第三步骤，以及在含氧氧化气氛中进行热处理以进行氧化修饰的第四步骤，用于通过与氮氧化硅膜中的氧缺乏部分的氧结合 构成栅极绝缘膜。

公开(公告)号：US20080119030A1

公开(公告)日：2008-05-22

申请号：US11976820

申请日：2007-10-29

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/20

CPC分类号： H01L21/02579 ,  C23C16/22 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/6675

摘要： According to an embodiment of the present invention, there is provided an improved method for manufacturing a thin film semiconductor device. This method includes the step of depositing a silicon thin film including a crystalline structure on a substrate by plasma CVD in which a silane gas represented by the formula SinH2n+2 (n=1, 2, 3, . . . ) and a germanium halide gas are used as a source gas.

摘要翻译： 根据本发明的实施例，提供了一种用于制造薄膜半导体器件的改进方法。 该方法包括以下步骤：通过等离子体CVD沉积包括晶体结构的硅薄膜在其上，其中由式Si N 2n + 2 + （n = 1,2,3，...），并且使用卤化锗气体作为源气体。

公开(公告)号：US20050070055A1

公开(公告)日：2005-03-31

申请号：US10942066

申请日：2004-09-15

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L51/50 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H05B33/10 ,  H01L29/04 ,  H01L31/036 ,  H01L31/20

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78696

摘要： The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.

摘要翻译： 根据本发明的薄膜晶体管的制造方法涉及反应热CVD工艺以形成有源层和源极 - 漏极层。 这提供了除去结晶半导体薄膜的附加步骤的优点。 所形成的叠层薄膜晶体管由原来的晶体半导体薄膜组成。 具有由晶体半导体薄膜形成的有源层和源极 - 漏极层，堆叠的薄膜晶体管的工作速度比由非晶半导体薄膜形成的速度更快。 消除结晶步骤的另一个优点是质量均匀，否则会受到结晶的不利影响。 此外，源极 - 漏极层由先前掺杂的晶体半导体薄膜形成的事实意味着在成膜之后不需要引入杂质的任何步骤。

公开(公告)号：US6015720A

公开(公告)日：2000-01-18

申请号：US544569

申请日：1995-10-18

申请人： Masahiro Minegishi ,  Masumitsu Ino ,  Masafumi Kunii ,  Takenobu Urazono ,  Hisao Hayashi

发明人： Masahiro Minegishi ,  Masumitsu Ino ,  Masafumi Kunii ,  Takenobu Urazono ,  Hisao Hayashi

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/268

CPC分类号： H01L27/1214 ,  H01L21/2022 ,  H01L29/66757 ,  G02F1/13454

摘要： Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650.degree. C., for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.

摘要翻译： 通过激光退火形成具有大晶粒尺寸的高品质多晶半导体薄膜的方法。 首先，在某些成膜条件下，进行成膜步骤以在绝缘基板上生长半导体层，从而形成前体膜。 该前体膜包含微晶晶粒簇。 然后，进行照射步骤。 也就是说，用激光束如准分子激光脉冲照射前体膜。 增加晶体尺寸以将前体膜改变成多晶半导体薄膜。 在成膜步骤中，例如通过LPCVD或APCVD在500至650℃的温度下形成晶粒尺寸大于3nm的前体膜。 在这些条件下，所得多晶前体膜基本上不含氢。 在照射步骤期间，发射准分子激光辐射的单脉冲。

公开(公告)号：US08686971B2

公开(公告)日：2014-04-01

申请号：US12368632

申请日：2009-02-10

申请人： Masafumi Kunii ,  Ryoichi Ito ,  Masanobu Ikeda

发明人： Masafumi Kunii ,  Ryoichi Ito ,  Masanobu Ikeda

IPC分类号： G06F3/042

CPC分类号： G02F1/1345 ,  G02F1/1354 ,  G02F1/1362

摘要： Disclosed herein is a liquid crystal display device including a liquid crystal panel having a first substrate, a second substrate facing the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and first and second electrodes formed on a surface side, of the first substrate, facing the second substrate, a transverse electric field being applied to the liquid crystal layer through the first and second electrodes, thereby displaying an image in a pixel area; wherein the first substrate includes: a light receiving element provided on the surface, of the first substrate, facing the second substrate, for receiving an incident light on a light receiving surface thereof, thereby forming data on the received light; and a planarizing film provided on the surface side, of the first substrate, facing the second substrate so as to cover the light receiving element.

摘要翻译： 本发明公开了一种液晶显示装置，包括具有第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的液晶层的液晶面板，以及形成在表面侧的第一和第二电极 所述第一衬底面对所述第二衬底，通过所述第一和第二电极施加到所述液晶层的横向电场，从而在像素区域中显示图像; 其特征在于，所述第一基板包括：受光元件，设置在所述第一基板的面向所述第二基板的表面上，用于在其受光面上接收入射光，由此在所接收的光上形成数据; 以及设置在第一基板的表面侧的面对第二基板以覆盖光接收元件的平坦化膜。

公开(公告)号：US20090279029A1

公开(公告)日：2009-11-12

申请号：US12435493

申请日：2009-05-05

申请人： Masafumi Kunii ,  Go Yamanaka

发明人： Masafumi Kunii ,  Go Yamanaka

IPC分类号： G02F1/133

CPC分类号： G02F1/13318

摘要： Disclosed herein is a liquid crystal display including a liquid crystal panel including, a first substrate, a second substrate opposed to said first substrate, and a liquid crystal layer interposed between said first substrate and said second substrate, a plurality of pixels being arrayed in a first direction and in a second direction orthogonal to said first direction in a pixel area provided in a plane where said first substrate and said second substrate are opposed.

摘要翻译： 本发明公开了一种液晶显示装置，其特征在于，包括：液晶面板，具有第一基板，与所述第一基板相对的第二基板以及插入在所述第一基板和所述第二基板之间的液晶层，多个像素排列成 在与所述第一方向垂直的第二方向上设置在所述第一基板和所述第二基板相对的平面中的像素区域中。

公开(公告)号：US20060199317A1

公开(公告)日：2006-09-07

申请号：US11420302

申请日：2006-05-25

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/84

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78696

摘要： The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.

摘要翻译： 根据本发明的薄膜晶体管的制造方法涉及反应热CVD工艺以形成有源层和源极 - 漏极层。 这提供了除去结晶半导体薄膜的附加步骤的优点。 所形成的叠层薄膜晶体管由原来的晶体半导体薄膜组成。 具有由晶体半导体薄膜形成的有源层和源极 - 漏极层，堆叠的薄膜晶体管的工作速度比由非晶半导体薄膜形成的速度更快。 消除结晶步骤的另一个优点是质量均匀，否则会受到结晶的不利影响。 此外，源极 - 漏极层由先前掺杂的晶体半导体薄膜形成的事实意味着在成膜之后不需要引入杂质的任何步骤。

公开(公告)号：US06734635B2

公开(公告)日：2004-05-11

申请号：US09968843

申请日：2001-10-03

申请人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

发明人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

IPC分类号： B05D306

CPC分类号： H01L21/02675 ,  B23K26/066 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026

摘要： A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for the division region.

摘要翻译： 通过用激光束照射半导体薄膜来预先形成在基板上的半导体薄膜的结晶工艺包括：准备步骤，将基板的表面划分为多个划分区域，并使激光束成形以进行调整 激光束的照射区域，使得一个分割区域被一次激光束共同照射;结晶步骤，用激光束照射一个分割区域，同时光学地调制激光束的强度，使得 在照射区域上投影循环光和暗图案，并且在移动图案之后至少一次照射相同的分割区域，使得移位之后的图案的亮和暗部分不与图案的那些重叠 转移前 以及扫描步骤，将激光束的照射区域移动到下一个分割区域，并重复用于分割区域的结晶步骤。

公开(公告)号：US06482722B2

公开(公告)日：2002-11-19

申请号：US09968842

申请日：2001-10-03

申请人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

发明人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

IPC分类号： H01L2904

CPC分类号： H01L21/02675 ,  B23K26/066 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026

摘要： A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for the division region.