公开(公告)号：US20050168535A1

公开(公告)日：2005-08-04

申请号：US10506750

申请日：2003-12-08

申请人： Taku Hirasawa ,  Akiko Murata ,  Eiji Fujii ,  Hideo Torii ,  Tohru Nakagawa

发明人： Taku Hirasawa ,  Akiko Murata ,  Eiji Fujii ,  Hideo Torii ,  Tohru Nakagawa

IPC分类号： B41J2/16 ,  B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1643 ,  B41J2/1646 ,  Y10S29/016 ,  Y10S29/019 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49401

摘要： First, a first electrode layer 4, a piezoelectric layer 5, a second electrode layer 6 and an oscillation layer 7 are stacked in this order over one surface of a silicon substrate 1. Next, an ink chamber partition 8 and a nozzle plate 11 are stacked over the oscillation layer 7. Subsequently, the silicon substrate 1 is ground away to a predetermined thickness from a surface thereof opposite to the first electrode layer 4, and then a remnant silicon substrate 13 is dry etched away. Thereafter, the first electrode layer 4 is patterned to form a plurality of inkjet mechanisms 2, 2, . . . . Finally, the plurality of inkjet mechanisms 2, 2, . . . are divided to simultaneously fabricate a plurality of inkjet heads 3, 3, . . . .

摘要翻译： 首先，在硅衬底1的一个表面上依次堆叠第一电极层4，压电层5，第二电极层6和振荡层7。 接下来，在振荡层7上层叠墨水室隔板8和喷嘴板11。 随后，从与第一电极层4相反的表面将硅衬底1磨去预定厚度，然后将残余硅衬底13干蚀刻掉。 此后，对第一电极层4进行图案化以形成多个喷墨机构2,2。 。 。 。 最后，多个喷墨机构2，2。 。 。 被分割成同时制造多个喷墨头3，3。 。 。 。

公开(公告)号：US20050146772A1

公开(公告)日：2005-07-07

申请号：US10997143

申请日：2004-11-24

申请人： Akiko Murata ,  Eiji Fujii ,  Hideo Torii

发明人： Akiko Murata ,  Eiji Fujii ,  Hideo Torii

IPC分类号： B41J2/14 ,  G02B26/00

CPC分类号： B41J2/14233 ,  B41J2/14282 ,  B41J2202/03 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element includes a first electrode film; a piezoelectric layered film including a first piezoelectric thin film formed on the first electrode film and a second piezoelectric thin film formed on the first piezoelectric thin film; and a second electrode film formed on the second piezoelectric thin film. Each of the first and second piezoelectric thin films is an aggregate of columnar grains grown unidirectionally along the thickness direction of the piezoelectric layered film. The Pb content of the first piezoelectric thin film is smaller than the Pb content of the second piezoelectric thin film. A columnar grain of the second piezoelectric thin film has a larger average cross-sectional diameter than an average cross-sectional diameter of a columnar grain of the first piezoelectric thin film. A ratio of the thickness of the piezoelectric layered film to the average cross-sectional diameter of the second piezoelectric thin film is not less than 20 and not more than 60.

摘要翻译： 压电元件包括​​第一电极膜; 压电层叠膜，包括形成在第一电极膜上的第一压电薄膜和形成在第一压电薄膜上的第二压电薄膜; 以及形成在第二压电薄膜上的第二电极膜。 第一和第二压电薄膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状晶粒的集合体。 第一压电薄膜的Pb含量小于第二压电薄膜的Pb含量。 第二压电薄膜的柱状晶粒的平均截面直径大于第一压电薄膜的柱状晶粒的平均截面直径。 压电层叠膜的厚度与第二压电薄膜的平均截面直径的比率不小于20并且不大于60。

公开(公告)号：US20050087689A1

公开(公告)日：2005-04-28

申请号：US10503328

申请日：2003-12-04

申请人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

IPC分类号： G01J5/34 ,  H01L37/02 ,  G01J5/00

CPC分类号： G01J5/34 ,  H01L37/025

摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0

摘要翻译： 由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4） ）O 3（0

公开(公告)号：US5712001A

公开(公告)日：1998-01-27

申请号：US619076

申请日：1996-03-20

申请人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Ryoichi Takayama

发明人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Ryoichi Takayama

IPC分类号： C30B25/10 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C30B25/16 ,  B05D3/06

CPC分类号： C23C16/45561 ,  C23C16/406 ,  C23C16/455 ,  C23C16/5096

摘要： The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.

摘要翻译： 本发明涉及一种制备具有NaCl型结构，尖晶石结构或纤锌矿结构的晶体取向氧化物薄膜的方法，该结构用作缓冲层以获得诸如超导氧化物薄膜和铁电体之类的功能氧化物薄膜 薄膜和用于其的化学气相沉积设备。 可旋转的基板保持器设置在反应室中。 保持基板的基板支架包括基板加热器。 衬底保持器接地以提供电极。 连接到高频电源的另一个电极与反应室中的衬底保持器相对定位。 在反应室的侧壁处布置排气。 在形成在基板支架和电极之间的等离子体放电区域中，相对于基板支架具有预定的倾斜角度θ的材料气体供应器。

公开(公告)号：US5663089A

公开(公告)日：1997-09-02

申请号：US465350

申请日：1995-06-05

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

IPC分类号： H01G4/30 ,  H01L21/70

CPC分类号： H01G4/306

摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

公开(公告)号：US07478558B2

公开(公告)日：2009-01-20

申请号：US11362583

申请日：2006-02-24

申请人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

发明人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

IPC分类号： G01C19/00 ,  B41J2/045 ,  H01L41/04

CPC分类号： H01L41/0815 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1646 ,  B41J2002/14491 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/49401

摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.

摘要翻译： 在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置有（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，（100） - 或（001） - 位于第一电极层14的靠近取向控制层15的一个表面上的钛或氧化钛上，并且沿与厚度方向垂直的方向的区域的横截面积沿着方向 远离第一电极层14朝向相对侧。 此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

公开(公告)号：US06475604B1

公开(公告)日：2002-11-05

申请号：US09584768

申请日：2000-06-01

申请人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Ryoichi Takayama

发明人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Ryoichi Takayama

IPC分类号： H01C700

CPC分类号： H01C17/12 ,  H01C7/023 ,  Y10T428/24917

摘要： A thin film thermistor element 10 is formed by forming on a backing substrate 11 of alumina a thermistor thin film 12 and a pair of comb electrodes 13 and 14 formed of a thin film of Pt. The thermistor thin film 12, which is formed of, for example, complex oxide of Mn—Co—Ni, has either a spinel type crystal structure which is priority oriented or oriented mainly in a (100) surface or a bixbite type crystal structure which is priority oriented in a (100) or (111) surface. Alternatively, the thermistor thin film is formed of LaCoO3 and has a rhombohedral bixbite type crystal structure. This makes it possible to hold the variation in resistance value low thereby to achieve high accuracy, and the deterioration with time can be held low and the high temperature durability can be improved, for the achievement of high reliability.

摘要翻译： 通过在氧化铝的背衬基板11上形成热敏电阻薄膜12和由Pt的薄膜形成的一对梳状电极13和14来形成薄膜热敏电阻元件10。 由例如Mn-Co-Ni的复合氧化物形成的热敏电阻薄膜12具有尖晶石型晶体结构，其优先取向或主要在（100）表面取向或双键型晶体结构中，其中， 在（100）或（111）表面优先考虑。 或者，热敏电阻薄膜由LaCoO 3形成，并且具有菱形双峰型晶体结构。 这使得可以将电阻值的变化保持为低，从而实现高精度，并且，为了实现高可靠性，能够将劣化随时间变低，提高耐高温性。

公开(公告)号：US06462643B1

公开(公告)日：2002-10-08

申请号：US09250731

申请日：1999-02-16

申请人： Eiji Fujii ,  Hideo Torii ,  Atsushi Tomozawa

发明人： Eiji Fujii ,  Hideo Torii ,  Atsushi Tomozawa

IPC分类号： H01C710

CPC分类号： H01C7/025 ,  H01C17/12

摘要： The present invention provides a PTC thermistor element low in electric resistance at room temperature and suitable for monolithic incorporation with an integrated circuit. According to the present invention, the PTC thermistor film is subjected to rapid heating by heat irradiation in the annealing step. An n-type semiconductor is interposed between the electrodes and the PTC thermistor film, and a PTC thermistor film is also interposed between the n-type semiconductor and the electrode. Further, a plurality of such thermistor elements are parallel-connected to each other, and at least one of them is connected opposite to the other elements.

摘要翻译： 本发明提供一种在室温下电阻较低的PTC热敏电阻元件，适用于集成电路的整体结合。 根据本发明，通过退火步骤中的热照射使PTC热敏电阻膜快速加热。 在电极和PTC热敏电阻膜之间插入n型半导体，并且在n型半导体和电极之间也插入PTC热敏电阻膜。 此外，多个这样的热敏电阻元件彼此并联连接，并且它们中的至少一个与其它元件相对地连接。

公开(公告)号：US06081182A

公开(公告)日：2000-06-27

申请号：US970496

申请日：1997-11-14

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

IPC分类号： G01K7/22 ,  H01C7/04 ,  H01C17/30 ,  H01L7/02

CPC分类号： G01K7/223 ,  H01C17/30 ,  H01C7/041 ,  H01C7/043

摘要： The present invention provides a temperature sensor element having excellent heat resistance, quick heat response, stable resistance, and high reliability with a less variation in resistance against time. The temperature sensor element includes a thermo-sensitive film mainly composed of a heat sensitive material having electrical resistance varies depending on the temperature; a pair of electrode films arranged to measure the electrical resistance in the direction of the thickness of the thermo-sensitive film, a base plate mainly composed of a heat-resistant insulating material for supporting the thermo-sensitive film and the electrode films, an anti-diffusion film interposed between the thermo-sensitive film and the electrode film in the vicinity of the base plate, and a film mainly composed of a heat-resistant insulating material for covering the thermo-sensitive film and the electrode films except the lead-connecting terminals of the electrode films. The thermo-sensitive film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.05.ltoreq.x+y.ltoreq.0.95, and 0.ltoreq.y/(x+y).ltoreq.0.6, and the anti-diffusion film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.ltoreq.x+y.ltoreq.0.95.

摘要翻译： 本发明提供了一种具有优异的耐热性，快速热响应性，稳定的电阻和高可靠性的温度传感器元件，其耐时间变化较小。 温度传感器元件包括主要由具有根据温度而变化的电阻的热敏材料组成的热敏膜; 布置成测量热敏膜厚度方向上的电阻的一对电极膜，主要由用于支撑热敏膜的耐热绝缘材料和电极膜组成的基板，抗 介于热敏膜与基板附近的电极膜之间的扩散膜，以及主要由用于覆盖热敏膜的耐热绝缘材料和除引线连接之外的电极膜构成的膜 电极膜的端子。 热敏膜由（Al1-x-yCrxFey）2O3表示的刚玉结晶结构的氧化物组成，其中0.05

公开(公告)号：US5406445A

公开(公告)日：1995-04-11

申请号：US216966

申请日：1994-03-24

申请人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

发明人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

IPC分类号： H01G4/20 ,  H01L29/04 ,  H01L23/48

CPC分类号： H01G4/20 ,  H01L2224/4918 ,  H01L2924/181

摘要： A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

摘要翻译： 将取向为（100）面的NaCl氧化物薄层或取向为（100）面的尖晶石氧化物薄层，朝向（100）面的钙钛矿电介质薄层和金属电极依次层压在金属电极上，从而提供 薄膜电容器。 或者，通过依次层叠取向于（100）面的氧化锌薄膜或取向为（100）面的尖晶石氧化物薄层，将铂薄层作为朝向（100）面的下部电极而制造薄膜电容器 取向为（100）面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。 当采用真空沉积法，溅射法，CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层，尖晶石氧化物薄层和钙钛矿电介质薄层 形成金属电极。