Semiconductor memory and method of manufacturing the same
    21.
    发明授权
    Semiconductor memory and method of manufacturing the same 有权
    半导体存储器及其制造方法

    公开(公告)号:US08410545B2

    公开(公告)日:2013-04-02

    申请号:US12710172

    申请日:2010-02-22

    Abstract: A semiconductor memory includes a semiconductor substrate, a buried insulating film formed on a part of an upper surface of the semiconductor substrate, and a semiconductor layer formed on another part of the upper surface of the semiconductor substrate. Each of the memory cell transistors comprises a first-conductivity-type source region, a first-conductivity-type drain region, and a first-conductivity-type channel region arranged in the semiconductor layer in the column direction, and a gate portion formed on a side surface of the channel region in the row direction.

    Abstract translation: 半导体存储器包括半导体衬底,形成在半导体衬底的上表面的一部分上的埋入绝缘膜和形成在半导体衬底的上表面的另一部分上的半导体层。 每个存储单元晶体管包括在列方向上布置在半导体层中的第一导电类型源极区,第一导电型漏极区和第一导电类型沟道区,以及形成在 沟道区域的行方向的侧面。

    SOLID-STATE IMAGING DEVICE
    23.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20120062771A1

    公开(公告)日:2012-03-15

    申请号:US13039504

    申请日:2011-03-03

    CPC classification number: H04N13/218 H04N13/232

    Abstract: In one embodiment, a solid-state imaging device includes: an imaging optical system including: a first and second surfaces facing each other; a flat reflector provided on the first surface and having an aperture in an outer circumferential portion; and a plurality of reflectors provided on the second surface and located in a plurality of ring-like areas, each of the reflectors being inclined in a radial direction, the reflectors having different diameters from one another; and an imaging element module including: an imaging element including an imaging area having a plurality of pixel blocks each including a plurality of pixels, and receiving and converting light from the imaging optical system into image data; a visible light transmission substrate provided between the imaging optical system and the imaging element; a microlens array provided on a surface of the visible light transmission substrate on the imaging element side; and an image processing unit processing the image data obtained by the imaging element.

    Abstract translation: 在一个实施例中,固态成像装置包括:成像光学系统,包括:彼此面对的第一和第二表面; 设置在第一表面上并在外圆周部分具有孔的平面反射器; 以及设置在所述第二表面上并且位于多个环状区域中的多个反射器,每个所述反射器在径向方向上倾斜,所述反射器彼此具有不同的直径; 以及成像元件模块,包括:成像元件,包括具有多个像素块的成像区域,每个像素块包括多个像素,并且将来自所述成像光学系统的光接收并转换为图像数据; 设置在所述摄像光学系统和所述摄像元件之间的可见光透射基板; 设置在所述可见光透射基板的所述摄像元件侧的表面上的微透镜阵列; 以及图像处理单元,处理由所述成像元件获得的图像数据。

    SOLID-STATE IMAGING ELEMENT
    24.
    发明申请
    SOLID-STATE IMAGING ELEMENT 有权
    固态成像元件

    公开(公告)号:US20110226953A1

    公开(公告)日:2011-09-22

    申请号:US13052903

    申请日:2011-03-21

    Abstract: It is possible to quickly and readily determine the location of an object. A solid-state imaging element according to an embodiment includes: at least two infrared detectors formed on a semiconductor substrate; an electric interconnect configured to connect the at least two infrared detectors in series; and a comparator unit configured to compare an intermediate voltage of the electric interconnect connecting the infrared detectors in series, with a predetermined reference voltage.

    Abstract translation: 可以快速,容易地确定对象的位置。 根据实施例的固态成像元件包括:形成在半导体衬底上的至少两个红外检测器; 配置为串联连接所述至少两个红外检测器的电互连; 以及比较器单元,被配置为将连接红外线检测器的电气互连串联的中间电压与预定的参考电压进行比较。

    INFRARED SOLID-STATE IMAGE SENSOR
    25.
    发明申请
    INFRARED SOLID-STATE IMAGE SENSOR 有权
    红外固态图像传感器

    公开(公告)号:US20100230594A1

    公开(公告)日:2010-09-16

    申请号:US12709759

    申请日:2010-02-22

    CPC classification number: H01L27/14623 H01L27/14649 H01L27/14669

    Abstract: An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted.

    Abstract translation: 一种红外固态图像传感器包括:像素区域,包括敏感像素区域,其中红外检测像素以矩阵形式布置以检测半导体衬底上的入射红外线和参考像素的参考像素区域, 红外线检测像素包括热电转换部分,该热电转换部分包括用于吸收入射的红外线并将入射的红外线转换成热的红外线吸收膜和第一热电转换元件,以将通过红外吸收中的转换获得的热量转换 每个参考像素包括第二热电转换元件。 参考像素的每个第一端连接到参考电位线,并且从相应的信号线读出的信号电位与从参考电位线提供的参考电位之间的差放大并输出。

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
    26.
    发明申请
    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号:US20100025584A1

    公开(公告)日:2010-02-04

    申请号:US12508846

    申请日:2009-07-24

    CPC classification number: H01L27/14669 H01L27/1203 H01L27/14683

    Abstract: An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

    Abstract translation: 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方,第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件,支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素,而不经由空腔,其中多个第一像素和多个第二像素被二维布置以形成像素区域,并且每个第二像素与 第一个像素。

    INFRARED RAY SENSOR ELEMENT
    27.
    发明申请
    INFRARED RAY SENSOR ELEMENT 审中-公开
    红外辐射传感器元件

    公开(公告)号:US20090236526A1

    公开(公告)日:2009-09-24

    申请号:US12405497

    申请日:2009-03-17

    Abstract: An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.

    Abstract translation: 一种红外线传感器元件包括:第一信号布线部,包括第一信号线,设置在与设置有凹部的区域不同的半导体基板的第一区域上; 第二信号布线部分,包括第二信号线,并设置在第一区域上,以与第一信号布线部分相交; 支撑件,其包括设置在所述凹部上方的支撑布线部,并且包括在其第一端处电连接到所述第一信号线的第一线和与所述第一线平行布置的与所述第一线绝缘的第二线,以及 在其第一端电连接到第二信号线; 电连接到第一和第二导线的第二端的热电换能器; 设置在所述热电换能器上的红外线吸收层; 以及设置在所述凹部上的检测单元。

    Acoustoelectric conversion device
    29.
    发明授权
    Acoustoelectric conversion device 失效
    声电转换装置

    公开(公告)号:US07293463B2

    公开(公告)日:2007-11-13

    申请号:US11116273

    申请日:2005-04-28

    CPC classification number: G01N29/2418 G01H9/00

    Abstract: In an acoustoelectric converter element, a light wave from a light source is introduced into a first optical waveguide of a vibration substrate, and diffracted by a diffraction grating disposed on the first optical waveguide. The diffracted light is directed to and detected by a photo detector. Here, the vibration substrate is so supported as to vibrate with respect to an acoustic wave. Therefore, the diffracted light detected by the photo detector is modulated by the acoustic wave, and a signal is output from the detector in accordance with the acoustic wave.

    Abstract translation: 在声电转换元件中,来自光源的光波被引入到振动基板的第一光波导中,并且被设置在第一光波导上的衍射光栅衍射。 衍射光被光检测器导向并检测。 这里,振动基板被支撑为相对于声波振动。 因此,由光检测器检测的衍射光被声波调制,并且根据声波从检测器输出信号。

    Method of manufacturing an image device
    30.
    发明授权
    Method of manufacturing an image device 有权
    制造图像装置的方法

    公开(公告)号:US07172920B2

    公开(公告)日:2007-02-06

    申请号:US11168423

    申请日:2005-06-29

    Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

    Abstract translation: 成像装置包括选择线,与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素,第一像素包括形成在第一信号线上的第一缓冲层 基板,形成在第一缓冲层上的第一测辐射热计薄膜,由经历金属 - 绝缘体转变的化合物制成,并产生第一温度检测信号,形成在基板上的第一开关元件,通过来自选择的选择信号选择 并且将第一温度检测信号提供给第一信号线,以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。

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