公开(公告)号：US08133788B2

公开(公告)日：2012-03-13

申请号：US12567050

申请日：2009-09-25

Applicant: Yasuyuki Sayama ,  Tetsuya Okada ,  Makoto Oikawa ,  Hiroyasu Ishida ,  Kazunari Kushiyama

Inventor： Yasuyuki Sayama ,  Tetsuya Okada ,  Makoto Oikawa ,  Hiroyasu Ishida ,  Kazunari Kushiyama

IPC: H01L21/336

CPC classification number: H01L29/7802 ,  H01L29/0878 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712

Abstract: An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n type impurity region adjacent to the channel region form a substantially perpendicular junction surface. Thus, since a depletion layer widens uniformly in a depth direction of a substrate, it is possible to secure a predetermined breakdown voltage. Furthermore, since an interval between the channel regions, above which the gate electrode is disposed, is uniform from its surface to its bottom, it is possible to increase an impurity concentration of the n type impurity region, resulting in an achievement of a low on-resistance.

Abstract translation: 在栅电极的下方设置有n型杂质区。 通过将栅极长度设置为小于沟道区的深度，沟道区的侧表面和与沟道区相邻的n型杂质区的侧表面形成基本上垂直的接合表面。 因此，由于耗尽层在衬底的深度方向上均匀地变宽，因此可以确保预定的击穿电压。 此外，由于栅极电极上方的沟道区域之间的间隔从表面到底部均匀，所以可以增加n型杂质区域的杂质浓度，导致实现低的导通 -抵抗性。

公开(公告)号：US06960454B2

公开(公告)日：2005-11-01

申请号：US09369735

申请日：1999-08-06

Applicant: Ikuo Matsui ,  Kazuhiko Ishikawa ,  Hiroyasu Ishida ,  Yoshitsugu Kosugi

Inventor： Ikuo Matsui ,  Kazuhiko Ishikawa ,  Hiroyasu Ishida ,  Yoshitsugu Kosugi

IPC: C12N15/09 ,  C12N1/21 ,  C12N9/24 ,  C12N9/42 ,  C12N15/00 ,  C12R1/01 ,  C12R1/19 ,  C12P19/04 ,  C07K1/00 ,  C12N9/26 ,  C12P19/02

CPC classification number: C12Y302/01021 ,  C12N9/2402

Abstract: The invention relates to a thermophilic enzyme having β-glycosidase activity which comprises the amino acid sequence of SEQ ID NO: 2 in which one or a plurality of amino acid residues may be deleted, replaced or added.

Abstract translation: 本发明涉及具有β-糖苷酶活性的嗜热酶，其包含SEQ ID NO：2的氨基酸序列，其中可以缺失，替换或添加一个或多个氨基酸残基。

公开(公告)号：US20050167748A1

公开(公告)日：2005-08-04

申请号：US11023961

申请日：2004-12-29

Applicant: Masahito Onda ,  Hirotoshi Kubo ,  Shouji Miyahara ,  Hiroyasu Ishida ,  Hiroaki Saito

Inventor： Masahito Onda ,  Hirotoshi Kubo ,  Shouji Miyahara ,  Hiroyasu Ishida ,  Hiroaki Saito

IPC: H01L29/417 ,  H01L21/265 ,  H01L21/336 ,  H01L29/08 ,  H01L29/41 ,  H01L29/423 ,  H01L29/49 ,  H01L29/72 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/66727 ,  H01L29/66734

Abstract: An interlayer dielectric film is completely buried in a trench, and failures caused by step coverage is prevented because a source electrode can be formed substantially uniformly on an upper portion of a gate electrode. Also, in the processes of forming a source region, a body region and an interlayer dielectric film, only one mask is necessary so that the device size is reduced to account for placement error of only one mask alignment.

Abstract translation: 层间电介质膜被完全埋入沟槽中，由于可以在栅电极的上部基本上均匀地形成源电极，所以防止由台阶覆盖引起的故障。 此外，在形成源极区域，体区域和层间电介质膜的过程中，仅需要一个掩模，使得器件尺寸减小以仅考虑一个掩模对准的放置误差。

公开(公告)号：US06391604B1

公开(公告)日：2002-05-21

申请号：US09519729

申请日：2000-03-03

Applicant: Ikuo Matsui ,  Kazuhiko Ishikawa ,  Hiroyasu Ishida ,  Yoshitsugu Kosugi ,  Yasutaka Tahara

Inventor： Ikuo Matsui ,  Kazuhiko Ishikawa ,  Hiroyasu Ishida ,  Yoshitsugu Kosugi ,  Yasutaka Tahara

IPC: C12N910

CPC classification number: C12N9/1007 ,  C12Y201/01017 ,  Y10S435/822

Abstract: A thermostable phosphatidylethanolamine N-methyltransferase and a process for producing the enzyme are provided. A host cell is transformed with an expression vector containing DNA encoding a thermostable enzyme derived from hyper-thermophilic archaea such as Pyrococcus, the enzyme having phosphatidylethanolamine N-methyltransferase activity and an optimum temperature of 90° C. or higher, and the transformed host cell is cultured.

Abstract translation: 提供了热稳定性磷脂酰乙醇胺N-甲基转移酶及其制备方法。 宿主细胞用含有编码来源于嗜热古细菌的热稳定酶的DNA的表达载体转化，如Pyrococcus，具有磷脂酰乙醇胺N-甲基转移酶活性的酶，最适温度为90℃或更高，转化的宿主细胞 被培养

公开(公告)号：US6133012A

公开(公告)日：2000-10-17

申请号：US16080

申请日：1998-01-30

Applicant: Kazuhiko Ishikawa ,  Ikuo Matsui ,  Hiroyasu Ishida ,  Yoshitsugu Kosugi ,  Katsuhiko Higuchi

Inventor： Kazuhiko Ishikawa ,  Ikuo Matsui ,  Hiroyasu Ishida ,  Yoshitsugu Kosugi ,  Katsuhiko Higuchi

IPC: C12N15/09 ,  C07H21/04 ,  C12N9/48 ,  C12N9/78 ,  C12N15/00 ,  C12Q1/37 ,  C12R1/01 ,  C12R1/19 ,  C12N9/52

CPC classification number: C12N9/48

Abstract: An acyl peptide hydrolase having an optimum temperature range of 90-95.degree. C. and a gene encoding the same are disclosed. With the above enzyme, it becomes possible to conduct amino terminal analysis of acylated proteins and peptides at high temperatures.

Abstract translation: 公开了具有最佳温度范围为90-95℃的酰基肽水解酶和编码该酰基肽水解酶的基因。 利用上述酶，可以在高温下进行酰化蛋白质和肽的氨基末端分析。

公开(公告)号：US5071915A

公开(公告)日：1991-12-10

申请号：US608239

申请日：1990-11-02

Applicant: Akira Sekiya ,  Masanori Tamura ,  Hiroyasu Ishida

Inventor： Akira Sekiya ,  Masanori Tamura ,  Hiroyasu Ishida

IPC: C08F8/18

CPC classification number: C08F8/18

Abstract: A novel fluorine-containing polymeric compound represented by the general formula--CH.sub.2 --CH[(CH.sub.2).sub.a --NH.sub.2 ]--CH.sub.2 --CH[(CH.sub.2).sub.a --NH--CO--NH--CH.sub.2).sub.a Rf]).sub.n,in which Rf is a perfluoroalkyl group having 6 to 15 carbon atoms, m is a positive integer in the range from 10 to 1500, n is a positive integer smaller than 0.7 m and a is 0 or 1, is prepared by the reaction of, when a is 0, a polyvinylamine of the formula --CH.sub.2 --CHNH.sub.2 ].sub.m, with an alkyl perfluoroalkanoate of the formula Rf--CO--OR, in which R is an alkyl group having 1 to 5 carbon atoms, or, when a is 1, a polyallylamine of the formula [CH.sub.2 --CH(CH.sub.2 --NH.sub.2)].sub.m, with a perfluoroalkylmethyl isocyanate of the formula RfCH.sub.2 --NCO. Despite the high fluorine content, the polymer is soluble in at least one kind of organic solvents so that Langmuir-Blodgett's films can be prepared from a solution of the polymer. The LB films have an extremely low surface energy and useful as a material for protection and modification of various surfaces.

公开(公告)号：US08717557B2

公开(公告)日：2014-05-06

申请号：US13578581

申请日：2011-02-16

Applicant: Hayato Tobe ,  Yoichi Sato ,  Hiroyasu Ishida ,  Takayuki Wakui

Inventor： Hayato Tobe ,  Yoichi Sato ,  Hiroyasu Ishida ,  Takayuki Wakui

IPC: G01J3/44

CPC classification number: G01J3/10 ,  G01J3/02 ,  G01J3/0297

Abstract: A spectrophotometer includes a xenon flash lamp, a spectroscope, and a light detector, wherein the spectrophotometer is configured to arrange a low-pressure mercury lamp on a bundle of light rays between the xenon flash lamp and the spectroscope on an as needed basis upon a performance determination of the spectrophotometer, and has a shutter mechanism that switches between shielding the bundle of light rays emitted from the low-pressure mercury lamp and allowing the bundle of light rays to pass through. A processing unit determines the performance of the spectrophotometer by detecting each of the light intensities with the light detector at the time when shielding the bundle of light rays and at the time when allowing the bundle of light rays by operating the shutter mechanism.

Abstract translation: 分光光度计包括氙闪光灯，分光镜和光检测器，其中分光光度计被配置为在氙闪光灯和分光器之间根据需要将低压汞灯布置在一束光线上 分光光度计的性能测定，并且具有遮挡从低压汞灯发射的光线束并允许光束通过的快门机构。 处理单元通过在屏蔽该束光束时和在通过操作快门机构允许光束束时检测光检测器中的每一个光强来确定分光光度计的性能。

公开(公告)号：US20120307240A1

公开(公告)日：2012-12-06

申请号：US13578581

申请日：2011-02-16

Applicant: Hayato Tobe ,  Yoichi Sato ,  Hiroyasu Ishida ,  Takayuki Wakui

Inventor： Hayato Tobe ,  Yoichi Sato ,  Hiroyasu Ishida ,  Takayuki Wakui

IPC: G01J3/10

CPC classification number: G01J3/10 ,  G01J3/02 ,  G01J3/0297

Abstract: Provided are a spectrophotometer using a xenon flash lamp and which can compare with data stored in the past, and a method for determining the performance of the spectrophotometer. In normal times, spectroscopic analysis is performed by employing a bundle of light rays emitted from the xenon flash lamp, spectrally separating the bundle of light rays into arbitrarily-defined wavelengths with a spectroscope through a concave mirror, and detecting the bundle of light rays having passed through a sample with a photodetector. When the performance is to be determined, a low-pressure mercury lamp is arranged in a path of the bundle of light rays between the xenon flash lamp and the spectroscope, a light-shield plate which constitutes a shutter mechanism is operated to shield the light and allow the light to pass through, and the intensity of the light is detected, to thereby determine the “wavelength accuracy” or the “resolution” by employing the bright-line spectrum of the low-pressure mercury lamp. Thus, spectroscopic analysis can be performed while allowing to compare with data stored in the past to be made.

Abstract translation: 提供了使用氙闪光灯的分光光度计，其可以与过去存储的数据进行比较，以及用于确定分光光度计的性能的方法。 通常，通过使用从氙闪光灯发射的一束光线进行光谱分析，通过凹面镜将分光镜将光束光谱分离成任意限定的波长，并且检测具有 用光电检测器通过样品。 当确定性能时，在氙闪光灯和分光镜之间的光束束的路径中布置低压汞灯，操作构成快门机构的遮光板来屏蔽光 并且允许光通过，并且检测光的强度，从而通过采用低压汞灯的亮线谱确定波长精度或分辨率。 因此，可以进行光谱分析，同时允许与要制作的过去存储的数据进行比较。

公开(公告)号：US08253207B2

公开(公告)日：2012-08-28

申请号：US12645942

申请日：2009-12-23

Applicant: Shuji Yoneda ,  Hiroyasu Ishida ,  Makoto Oikawa

Inventor： Shuji Yoneda ,  Hiroyasu Ishida ,  Makoto Oikawa

IPC: H01L27/11

CPC classification number: H01L27/0652 ,  H01L29/0696 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/866 ,  H03K17/163

Abstract: By integrating a diode and a resistor connected in parallel into the same chip as an IGBT and connecting a cathode of the diode to a gate of the IGBT, the value of dv/dt can be limited to a predetermined range inside the chip of the IGBT without a deterioration in turn-on characteristics. Since the chip includes a resistor having such a resistance that a dv/dt breakdown of the IGBT can be prevented, the IGBT can be prevented from being broken by an increase in dv/dt at a site (user site) to which the chip is supplied.

Abstract translation: 通过将二极管和电阻并联连接到与IGBT相同的芯片上并将二极管的阴极连接到IGBT的栅极，dv / dt的值可以限制在IGBT的芯片内部的预定范围内 没有导通特性的恶化。 由于芯片包括具有能够防止IGBT的dv / dt击穿的电阻的电阻器，因此可以防止IGBT在芯片的场所（用户现场）处的dv / dt增加而被破坏 提供。

公开(公告)号：US07528441B2

公开(公告)日：2009-05-05

申请号：US11839293

申请日：2007-08-15

Applicant: Hiroyasu Ishida ,  Tadashi Natsume

Inventor： Hiroyasu Ishida ,  Tadashi Natsume

IPC: H01L27/108

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/7811

Abstract: Provided is an insulated gate semiconductor device. In the device, source regions are provided in the entire operation area and a first back gate region is provided below the source region between trenches. Moreover, a second back gate region connected to the first back gate region is provided outside of the source regions. Thereafter, a first electrode layer coming into contact with the source regions is provided in the entire operation area, and a second electrode layer coming into contact with the second back gate regions is provided around the first electrode layer. Accordingly, potentials can be individually applied to the first electrode layer and the second electrode layer. Thus, it is possible to perform control for preventing reverse flow caused by a parasitic diode.

Abstract translation: 提供绝缘栅半导体器件。 在器件中，源区域设置在整个操作区域中，并且在沟槽之间的源极区域的下方提供第一后栅极区域。 此外，连接到第一背栅极区域的第二背栅极区域设置在源极区域的外部。 此后，在整个操作区域中设置与源极区域接触的第一电极层，并且在第一电极层周围设置与第二背栅极区域接触的第二电极层。 因此，电位可以单独施加到第一电极层和第二电极层。 因此，可以执行用于防止由寄生二极管引起的反向流动的控制。