公开(公告)号：US20060261336A1

公开(公告)日：2006-11-23

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

公开(公告)号：US20050258443A1

公开(公告)日：2005-11-24

申请号：US11121070

申请日：2005-05-04

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Aya Anzai ,  Masayuki Sakakura ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Aya Anzai ,  Masayuki Sakakura ,  Hiromichi Godo

IPC分类号： H01L27/15 ,  H01L27/32 ,  H01L33/00 ,  H05B33/12

CPC分类号： H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5262

摘要： An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.

摘要翻译： 本发明的一个目的是提供一种发光装置，其中发光光谱的变化取决于用于观察发射光的表面的角度。 本发明的发光器件包括形成在衬底上的第一绝缘层，形成在第一绝缘层上的第二绝缘层，以及形成在第二绝缘层上的半导体层。 形成栅极绝缘层以覆盖第二绝缘层和半导体层。 在栅绝缘层上形成栅电极。 形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。 通过第一层间绝缘层，栅极绝缘层和第二绝缘层形成开口。 形成第二层间绝缘层以覆盖第一绝缘层和开口。 在开口上形成发光元件。

公开(公告)号：US20070032049A1

公开(公告)日：2007-02-08

申请号：US11580938

申请日：2006-10-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

IPC分类号： H01L21/20

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

摘要翻译： 在绝缘表面上形成第一非晶半导体膜。 加入促进结晶的催化剂元素。 此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。 在第一结晶半导体膜上形成阻挡层和第二半导体层。 第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20， 浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 ^{3 。 随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。}

公开(公告)号：US06479333B1

公开(公告)日：2002-11-12

申请号：US09532166

申请日：2000-03-21

申请人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

发明人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

摘要： A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

摘要翻译： 通过扩散金属元素进行晶体生长301，并且将镍元素移动到已掺杂磷的区域108和109中。 此时与镍元素的移动方向302,303一致的轴线与与晶体生长方向一致的轴线一致，制造具有作为沟道形成区域的区域的TFT。 在镍移动的区域的路径中，由于在移动方向上获得高结晶度，所以可以通过这种方式获得具有高特性的TFT。

公开(公告)号：US06197626B1

公开(公告)日：2001-03-06

申请号：US09028963

申请日：1998-02-23

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is performed to getter nickel existing in a region 113 to the regions 111 and 112. Then, the mask 109 is side-etched to obtain a pattern 115. Then, the regions 111 and 112 are removed by utilizing the pattern 115 and to pattern the region 113. Thus, a region 116 from which nickel element has been removed is obtained. The TFT is fabricated by using the region 116 as an active layer.

摘要翻译： 通过使用通过使用镍使非晶硅膜结晶而获得的晶体硅膜获得具有稳定特性的TFT。 通过使用掩模109将磷离子注入到区域111和112中。然后，进行热处理以将存在于区域113中的镍吸收到区域111和112.然后，对掩模109进行侧蚀刻以获得图案 然后，通过利用图案115去除区域111和112，并对区域113进行图案化。因此，获得了已经从中去除了镍元素的区域116。 通过使用区域116作为有源层来制造TFT。

公开(公告)号：US6162704A

公开(公告)日：2000-12-19

申请号：US10416

申请日：1998-01-21

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

IPC分类号： C01B33/02 ,  C30B29/06 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： To provide a method of removing a catalyst element from a crystalline silicon film obtained by solid phase growth using the catalyst element promoting crystallization, phosphorus is implanted selectively to the crystalline silicon film having the catalyst element whereby a portion of the silicon film implanted with phosphorus is made amorphous, and when a thermal annealing treatment is performed and the silicon film is heated, the catalyst element is moved to an amorphous portion implanted with phosphorus having large gettering capacity by which the concentration of the catalyst element in the silicon film is lowered and a semiconductor device is fabricated by using the silicon film.

公开(公告)号：US07485553B2

公开(公告)日：2009-02-03

申请号：US11580938

申请日：2006-10-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

公开(公告)号：US06613614B2

公开(公告)日：2003-09-02

申请号：US10101830

申请日：2002-03-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06544826B1

公开(公告)日：2003-04-08

申请号：US09717142

申请日：2000-11-22

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L29/78621

摘要： In producing TFT by crystallizing an amorphous silicon film by the action of nickel, the influence of nickel on the TFT produced is inhibited. A mask 104 is formed over an amorphous silicon film 102, and a nickel-containing solution is applied thereover. In that condition, nickel is kept in contact with the surface of the amorphous silicon film at the opening 103 of the mask. Then, this is heated to crystallize the amorphous silicon film. Next, a phosphorus-containing solution is applied thereto, so that phosphorus is introduced into the silicon film in the region of the opening 103. This is again heated, whereby nickel is gettered in the region into which phosphorus has been introduced. In this process, the nickel concentration in the silicon film is reduced.

摘要翻译： 在通过镍的作用使非晶硅膜结晶而制造TFT时，镍对所制造的TFT的影响被抑制。 在非晶硅膜102上形成掩模104，并且在其上施加含镍溶液。 在这种情况下，镍在掩模的开口103处与非晶硅膜的表面保持接触。 然后，将其加热以使非晶硅膜结晶。 接下来，向其中施加含磷溶液，使得在开口103的区域中将磷引入到硅膜中。这再次被加热，由此在被引入磷的区域中镍被吸收。 在此过程中，硅膜中的镍浓度降低。

公开(公告)号：US06448118B2

公开(公告)日：2002-09-10

申请号：US09749863

申请日：2000-12-26

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is performed to getter nickel existing in a region 113 to the regions 111 and 112. Then, the mask 109 is side-etched to obtain a pattern 115. Then, the regions 111 and 112 are removed by utilizing the pattern 115 and to pattern the region 113. Thus, a region 116 from which nickel element has been removed is obtained. The TFT is fabricated by using the region 116 as an active layer.

摘要翻译： 通过使用通过使用镍使非晶硅膜结晶而获得的晶体硅膜获得具有稳定特性的TFT。 通过使用掩模109将磷离子注入到区域111和112中。然后，进行热处理以将存在于区域113中的镍吸收到区域111和112.然后，对掩模109进行侧蚀刻以获得图案 然后，通过利用图案115去除区域111和112，并对区域113进行图案化。因此，获得了已经从中去除了镍元素的区域116。 通过使用区域116作为有源层来制造TFT。