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42 条记录 (耗时 0.093 秒)

    Method for manufacturing a solid state image sensing device
    21.
    发明授权
    Method for manufacturing a solid state image sensing device 失效
    固体摄像装置的制造方法

    公开(公告)号：US5976906A

    公开(公告)日：1999-11-02

    申请号：US733914

    申请日：1996-10-18

    申请人： Kenji Takada ,  Kouichi Ishida ,  Yoshihiro Hamakawa ,  Hiroaki Okamoto

    发明人： Kenji Takada ,  Kouichi Ishida ,  Yoshihiro Hamakawa ,  Hiroaki Okamoto

    IPC分类号： H01L27/148 ,  H01L31/0224 ,  H01L21/00

    CPC分类号： H01L31/022408 ,  H01L27/14806

    摘要： A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.

    摘要翻译： 一种固体摄像装置，具有半导体衬底，设置在半导体衬底上的正或负导电类型的第一扩散区域，多个第二扩散区域，每个第二扩散区域相对于第一扩散区域为相反的导电类型，并且是 设置在第一扩散区域中，以及设置在至少第二扩散区域上的半导体薄层。

    Method for production of semiconductor by glow discharge decomposition of silane
    23.
    发明授权
    Method for production of semiconductor by glow discharge decomposition of silane 失效
    通过硅烷辉光放电分解生产半导体的方法

    公开(公告)号：US4634601A

    公开(公告)日：1987-01-06

    申请号：US716302

    申请日：1985-03-26

    申请人： Yoshihiro Hamakawa ,  Hideo Yamagishi ,  Yoshihisa Tawada

    发明人： Yoshihiro Hamakawa ,  Hideo Yamagishi ,  Yoshihisa Tawada

    IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/509 ,  H01L21/205 ,  B05D3/06 ,  B05D5/12

    CPC分类号： C23C16/24 ,  C23C16/509 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262

    摘要： The production of a semiconductor by the glow discharge decomposition of a silane type gas is accomplished advantageously by a method which comprises effecting the glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicularly to a substrate and insulated from the ground potential and subsequently allowing the product of the decomposition to be deposited on the substrate disposed so as to be exposed to the introduced silane type gas. The semiconductor obtained by this method is free from the drawbacks suffered by the conventional method using a power source of high frequency.

    摘要翻译： 通过硅烷型气体的辉光放电分解来制造半导体有利地通过一种方法实现，该方法包括：引入硅烷型气体的辉光放电分解与基本上垂直于基板设置并与地绝缘的多个相对电极 并且随后允许分解产物沉积在被设置为暴露于引入的硅烷型气体的基板上。 通过该方法获得的半导体没有使用高频电源的常规方法所遭受的缺陷。

    Photovoltaic device
    26.
    发明授权
    Photovoltaic device 失效
    光伏装置

    公开(公告)号：US4271328A

    公开(公告)日：1981-06-02

    申请号：US130536

    申请日：1980-03-14

    申请人： Yoshihiro Hamakawa ,  Hiroaki Okamoto ,  Yoshiteru Nitta ,  Toshio Adachi

    发明人： Yoshihiro Hamakawa ,  Hiroaki Okamoto ,  Yoshiteru Nitta ,  Toshio Adachi

    IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/06

    CPC分类号： H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the n type, i type and p type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.

    摘要翻译： 一种光电器件，包括多个非晶硅单位电池，每个非晶硅单位电池各自具有在由不锈钢制成的基板上分层的p-i-n结构。 在最上面的单元电池上形成用于与导电衬底配合地抽出光电动势的透明导电层，使得光线从最上面的单电池入射到光电器件上。 优选地，更靠近光入射表面的单元电池的厚度被选择为小于远离光入射表面的单元电池的厚度。 每个单电池被构造成使得n型，i型和p型层以杂质类型从光入射表面按照上述顺序设置。

    Method of forming microcrystalline silicon-containing silicon carbide film
    28.
    发明授权
    Method of forming microcrystalline silicon-containing silicon carbide film 失效
    形成微晶硅的碳化硅膜的方法

    公开(公告)号：US5021103A

    公开(公告)日：1991-06-04

    申请号：US517479

    申请日：1990-05-02

    申请人： Yoshihiro Hamakawa ,  Hiroaki Okamoto ,  Yutaka Hattori

    发明人： Yoshihiro Hamakawa ,  Hiroaki Okamoto ,  Yutaka Hattori

    IPC分类号： H01L31/04 ,  C23C16/32 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/03765 ,  C23C16/325 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S148/148 ,  Y10S438/931

    摘要： A microcrystalline silicon-containing silicon carbide semiconductor film has an optical energy gap of not less than 2.0 eV, and a dark electric conductivity of less than 10.sup.-6 Scm.sup.-1. The Raman scattering light of the microcrystalline silicon-containing silicon carbide semiconductor film, which shows the presence of silicon crystal phase, has a peak in the vicinity of 530 cm.sup.-1. This microcrystalline silicon-containing silicon carbide semiconductor film is formed on a substrate by preparing a mixture gas having a hydrogen dilution rate .gamma., which is the ratio of the partial pressure of hydrogen gas to the sum of the partial pressure of a silicon-containing gas and the partial pressure of a carbon-containing gas, of 30, transmitting microwave of a frequency of not less than 100 MHz into the mixture gas near a substrate with an electric power density of not less than 4.4.times.10.sup.-2, and generating plasma at a temperature of the substrate of not less than 200.degree. C. and under a gas pressure of not less than 10.sup.-2 Torr.

    摘要翻译： 微晶硅的碳化硅半导体膜具有不小于2.0eV的光能隙和小于10-6Scm-1的暗电导率。 显示硅晶相存在的微晶硅的碳化硅半导体膜的拉曼散射光在530cm -1附近具有峰值。 这种微晶硅的碳化硅半导体膜通过制备具有氢稀释比γ的混合气体形成在基板上，氢气稀释比率γ是氢气分压与含硅气体的分压之和的比率 以及30℃的含碳气体的分压，将不小于100MHz的频率的微波传输到基板的附近的混合气体中，电功率密度不低于4.4×10 -2，并产生等离子体 基材的温度不低于200℃，气压不小于10-2乇。