公开(公告)号：US07897970B2

公开(公告)日：2011-03-01

申请号：US11957734

申请日：2007-12-17

申请人： Hyun-Young Kim ,  Joo-Sun Yoon ,  Bong-Ju Kim ,  Seung-Gyu Tae

发明人： Hyun-Young Kim ,  Joo-Sun Yoon ,  Bong-Ju Kim ,  Seung-Gyu Tae

IPC分类号： H01L29/40

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/136227 ,  H01L27/12

摘要： In a lower substrate, a display apparatus having the lower substrate and a method of manufacturing the lower substrate, the lower substrate includes a pixel area and a circuit area. An image is displayed in the pixel area. A first signal electrode is disposed in a circuit area. A first insulating layer includes an opening, through which the first signal electrode is exposed. A second signal electrode is disposed on the first insulating layer in the circuit area, and spaced apart from the first signal electrode. A second insulating layer is disposed on the first insulating layer, and includes a contact hole, through which the first and second signal electrodes are exposed. A conductive layer electrically connects the first signal electrode to the second signal electrode. Therefore, a manufacturing process is simplified so that a yield of the lower substrate is increased.

摘要翻译： 在下基板中，具有下基板的显示装置和下基板的制造方法，下基板包括像素区域和电路区域。 图像显示在像素区域中。 第一信号电极设置在电路区域中。 第一绝缘层包括第一信号电极暴露的开口。 第二信号电极设置在电路区域中的第一绝缘层上，并与第一信号电极间隔开。 第二绝缘层设置在第一绝缘层上，并且包括接触孔，第一和第二信号电极通过该接触孔露出。 导电层将第一信号电极与第二信号电极电连接。 因此，简化了制造工艺，使得下基板的产量增加。

公开(公告)号：US07855767B2

公开(公告)日：2010-12-21

申请号：US11065034

申请日：2005-02-25

申请人： Joo-Sun Yoon ,  Bong-Ju Kim ,  Yong-Ho Yang ,  Seung-Gyu Tae ,  Hyun-Young Kim ,  Jin-Suk Park

发明人： Joo-Sun Yoon ,  Bong-Ju Kim ,  Yong-Ho Yang ,  Seung-Gyu Tae ,  Hyun-Young Kim ,  Jin-Suk Park

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F2001/133388

摘要： A liquid crystal display includes a display area that can be seen by a user, and a peripheral area external to the display area. The display area and the peripheral area are provided with pixel electrodes including transparent electrodes and reflective electrodes. The reflective electrodes on the display area have holes exposing the transparent electrodes, while the reflective electrodes on the peripheral area have no hole.

摘要翻译： 液晶显示器包括用户可以看到的显示区域和显示区域外部的外围区域。 显示区域和周边区域设置有包括透明电极和反射电极的像素电极。 显示区域上的反射电极具有暴露透明电极的孔，而周边区域上的反射电极没有孔。

公开(公告)号：US07796228B2

公开(公告)日：2010-09-14

申请号：US12035556

申请日：2008-02-22

申请人： Hyun-Young Kim ,  Kwan-Wook Jung ,  Seung-Gyu Tae

发明人： Hyun-Young Kim ,  Kwan-Wook Jung ,  Seung-Gyu Tae

IPC分类号： G02F1/1345 ,  H01L27/13 ,  H01L23/522 ,  H01L21/768

CPC分类号： G02F1/13458 ,  G02F1/133555 ,  G02F1/13452 ,  G02F2001/136236 ,  H01L27/1288

摘要： A display substrate includes a base substrate having a display area and a peripheral area which surrounds the display area, a pixel electrode formed on the display area, a pad part formed on the peripheral area, an adhesion part formed on the peripheral area and having a plurality of holes formed in an area adjacent to the pad part on the peripheral area and a conductive adhesion member formed on the pad part and the adhesion part to make electrical contact with the pad part and a terminal of an integrated circuit.

摘要翻译： 显示基板包括具有显示区域和围绕显示区域的周边区域的基底基板，形成在显示区域上的像素电极，形成在周边区域上的焊盘部分，形成在周边区域上的粘合部分， 形成在与周边区域上的焊盘部分相邻的区域中的多个孔，以及形成在焊盘部分和粘合部分上以与集成电路的焊盘部分和端子电接触的导电粘合构件。

公开(公告)号：US07504725B2

公开(公告)日：2009-03-17

申请号：US10915871

申请日：2004-08-09

申请人： Rak-Hwan Kim ,  Young-Cheon Kim ,  Hyeon-Deok Lee ,  Hyun-Young Kim ,  In-Sun Park

发明人： Rak-Hwan Kim ,  Young-Cheon Kim ,  Hyeon-Deok Lee ,  Hyun-Young Kim ,  In-Sun Park

IPC分类号： H01L23/52

CPC分类号： H01L23/485 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76876 ,  H01L27/10885 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device and a method of manufacturing the semiconductor memory device, in which a bit line can have a low resistance without an increase in the thickness of the bit line. In the semiconductor memory device, an insulating layer having a contact hole that exposes a conductive region is formed on a semiconductor substrate having the conductive region. A barrier metal layer is formed along the surface of the insulating layer and the surface of the contact hole. A grain control layer is formed between the barrier metal layer and the tungsten layer. A tungsten layer is formed on the grain control layer. A grain size of the tungsten layer is increased by the grain control layer.

摘要翻译： 一种半导体存储器件和半导体存储器件的制造方法，其中位线可以具有低电阻而不增加位线的厚度。 在半导体存储器件中，在具有导电区域的半导体衬底上形成具有暴露导电区域的接触孔的绝缘层。 沿着绝缘层的表面和接触孔的表面形成阻挡金属层。 在阻挡金属层与钨层之间形成晶粒控制层。 在晶粒控制层上形成钨层。 钨层的晶粒尺寸由晶粒控制层增加。

公开(公告)号：US20070048910A1

公开(公告)日：2007-03-01

申请号：US11552726

申请日：2006-10-25

申请人： Joo-Sun Yoon ,  Bong-Ju Kim ,  Seung-Gyu Tae ,  Hyun-Young Kim

发明人： Joo-Sun Yoon ,  Bong-Ju Kim ,  Seung-Gyu Tae ,  Hyun-Young Kim

IPC分类号： H01L21/84

CPC分类号： G02F1/13458 ,  G02F1/133553 ,  G02F1/133555 ,  G02F1/136227 ,  G02F2001/136236

摘要： A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to form a data wire inducing data lines intersecting the gate lines, source electrodes, drain electrodes, and data pads. A protective layer made of silicon nitride is deposited on the substrate, and an organic insulating layer made of a photosensitive organic insulating material is coated on the protective layer. The organic insulating layer is patterned to form an unevenness pattern on its surface and first contact holes exposing the protective layer opposite the drain electrodes. Subsequently, the surface of the organic insulating layer is treated using inactive gas such as Ar, and then the protective layer is patterned together with the gate insulating layer by photo etch using a photoresist pattern to form contact holes respectively exposing the drain electrodes, the gate pads, and the data pads. Next, indium-tin-oxide or indium-zinc-oxide is deposited and patterned to form transparent electrodes, subsidiary gate pads, and subsidiary data pads respectively connected to the drain electrodes, the gate pads and the data pads. Finally, a reflective conductive material is deposited and patterned to form reflecting films having respective apertures in the pixel area on the transparent electrodes.

摘要翻译： 在基板上形成包括栅极线，栅极电极和栅极焊盘并沿横向延伸的栅极线。 此后形成栅极绝缘层，并且在其上顺序地形成半导体层和欧姆接触层。 导电材料被沉积并图案化以形成数据线，其引导与栅极线，源电极，漏电极和数据焊盘相交的数据线。 在衬底上沉积由氮化硅制成的保护层，并且将由光敏有机绝缘材料制成的有机绝缘层涂覆在保护层上。 有机绝缘层被图案化以在其表面上形成凹凸图案，并且暴露出与漏电极相对的保护层的第一接触孔。 随后，使用诸如Ar的惰性气体处理有机绝缘层的表面，然后使用光致抗蚀剂图案通过光蚀刻将保护层与栅极绝缘层一起构图，以形成分别暴露漏电极，栅极 垫和数据垫。 接下来，沉积和图案化氧化铟锡或氧化铟锌，以形成分别连接到漏电极，栅极焊盘和数据焊盘的透明电极，辅助栅极焊盘和辅助数据焊盘。 最后，沉积并图案化反射导电材料以形成在透明电极上的像素区域中具有相应孔的反射膜。

公开(公告)号：US20060292810A1

公开(公告)日：2006-12-28

申请号：US11448769

申请日：2006-06-08

申请人： Jung-Hun Seo ,  Hyun-Young Kim ,  Young-Wook Park ,  Jin-Gi Hong ,  Kun-Sang Park ,  Jin-Ho Kim ,  Kyung-Bum Koo

发明人： Jung-Hun Seo ,  Hyun-Young Kim ,  Young-Wook Park ,  Jin-Gi Hong ,  Kun-Sang Park ,  Jin-Ho Kim ,  Kyung-Bum Koo

IPC分类号： H01L21/20

CPC分类号： H01L28/91 ,  H01L21/28562 ,  H01L27/10817 ,  H01L27/10852

摘要： In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound by surface reaction between the source gases is higher than that by mass transfer between the source gases. A second metal compound may be deposited on the first metal compound and undesired materials may be removed by providing the source gases with a second flow rate ratio different from the first flow rate ratio. Depositing the first and the second metal compounds may be repeated to form a lower electrode. A dielectric layer and an upper electrode may be formed on the lower electrode. Accordingly, permeation of an etching liquid or gas may be reduced during an etching process.

摘要翻译： 在制造电容器的方法中，可以使用第一和第二源气体在基板上沉积第一金属化合物。 可以通过第一流量比将第一和第二源气体提供到基底上，其中通过源气体之间的表面反应使第一金属化合物的沉积速率高于源气体之间的质量传递的沉积速率。 可以将第二金属化合物沉积在第一金属化合物上，并且可以通过提供不同于第一流速比的第二流量比来提供源气体来除去不需要的物质。 可以重复沉积第一和第二金属化合物以形成下电极。 电介质层和上电极可以形成在下电极上。 因此，在蚀刻过程中可能会减少蚀刻液体或气体的渗透。

公开(公告)号：US20050104070A1

公开(公告)日：2005-05-19

申请号：US10968825

申请日：2004-10-19

申请人： Hyun-Young Kim ,  Joo-Sun Yoon ,  Bong-Ju Kim ,  Seung-Gyu Tae

发明人： Hyun-Young Kim ,  Joo-Sun Yoon ,  Bong-Ju Kim ,  Seung-Gyu Tae

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC分类号： G02F1/133555 ,  G02F1/133371 ,  G02F1/136227 ,  H01L27/12

摘要： In a lower substrate, a display apparatus having the lower substrate and a method of manufacturing the lower substrate, the lower substrate includes a pixel area and a circuit area. An image is displayed in the pixel area. A first signal electrode is disposed in a circuit area. A first insulating layer includes an opening, through which the first signal electrode is exposed. A second signal electrode is disposed on the first insulating layer in the circuit area, and spaced apart from the first signal electrode. A second insulating layer is disposed on the first insulating layer, and includes a contact hole, through which the first and second signal electrodes are exposed. A conductive layer electrically connects the first signal electrode to the second signal electrode. Therefore, a manufacturing process is simplified so that a yield of the lower substrate is increased.

摘要翻译： 在下基板中，具有下基板的显示装置和下基板的制造方法，下基板包括像素区域和电路区域。 图像显示在像素区域中。 第一信号电极设置在电路区域中。 第一绝缘层包括第一信号电极暴露的开口。 第二信号电极设置在电路区域中的第一绝缘层上，并与第一信号电极间隔开。 第二绝缘层设置在第一绝缘层上，并且包括接触孔，第一和第二信号电极通过该接触孔露出。 导电层将第一信号电极与第二信号电极电连接。 因此，简化了制造工艺，使得下基板的产量增加。

公开(公告)号：US20050042829A1

公开(公告)日：2005-02-24

申请号：US10915871

申请日：2004-08-09

申请人： Rak-Hwan Kim ,  Young-Cheon Kim ,  Hyeon-Deok Lee ,  Hyun-Young Kim ,  In-Sun Park

发明人： Rak-Hwan Kim ,  Young-Cheon Kim ,  Hyeon-Deok Lee ,  Hyun-Young Kim ,  In-Sun Park

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485

CPC分类号： H01L23/485 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76876 ,  H01L27/10885 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device and a method of manufacturing the semiconductor memory device, in which a bit line can have a low resistance without an increase in the thickness of the bit line. In the semiconductor memory device, an insulating layer having a contact hole that exposes a conductive region is formed on a semiconductor substrate having the conductive region. A barrier metal layer is formed along the surface of the insulating layer and the surface of the contact hole. A grain control layer is formed between the barrier metal layer and the tungsten layer. A tungsten layer is formed on the grain control layer. A grain size of the tungsten layer is increased by the grain control layer.

摘要翻译： 一种半导体存储器件和半导体存储器件的制造方法，其中位线可以具有低电阻而不增加位线的厚度。 在半导体存储器件中，在具有导电区域的半导体衬底上形成具有暴露导电区域的接触孔的绝缘层。 沿着绝缘层的表面和接触孔的表面形成阻挡金属层。 在阻挡金属层与钨层之间形成晶粒控制层。 在晶粒控制层上形成钨层。 钨层的晶粒尺寸由晶粒控制层增加。

公开(公告)号：US20120119229A1

公开(公告)日：2012-05-17

申请号：US13159317

申请日：2011-06-13

申请人： Hyun-Young Kim ,  Sung-In Ro ,  Cheoll-Hee Jeon

发明人： Hyun-Young Kim ,  Sung-In Ro ,  Cheoll-Hee Jeon

IPC分类号： H01L33/62

CPC分类号： H01L27/1259 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/136236 ,  H01L21/28008 ,  H01L21/283 ,  H01L21/4885 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor array panel includes: a substrate including a display area and a drive region in which a driving chip for transmitting a driving signal to the pixels is located; a gate line in the display area; a storage electrode line; a gate driving pad coupled to the driving chip; a gate insulating layer; a first semiconductor layer on the gate insulating layer and overlapped with a gate electrode protruding from the gate line; a second semiconductor layer formed on the gate insulating layer and overlapped with a sustain electrode protruding from the storage electrode line; a data line crossing the gate line in an insulated manner and a drain electrode separated from the data line; and a pixel electrode coupled to the drain electrode, and the drain electrode comprises a drain bar facing the source electrode, and a drain extender overlapped with the second semiconductor layer.

摘要翻译： 薄膜晶体管阵列面板包括：基板，包括显示区域和驱动区域，驱动区域中驱动信号发送到像素的驱动芯片; 显示区域中的栅极线; 存储电极线; 耦合到驱动芯片的栅极驱动焊盘; 栅极绝缘层; 栅极绝缘层上的第一半导体层，并与从栅极线突出的栅电极重叠; 形成在所述栅极绝缘层上并与从所述存储电极线突出的维持电极重叠的第二半导体层; 以绝缘方式与栅极线交叉的数据线和与数据线分离的漏电极; 以及耦合到所述漏电极的像素电极，并且所述漏电极包括面向所述源电极的漏极条和与所述第二半导体层重叠的漏极延伸器。

公开(公告)号：US08149365B2

公开(公告)日：2012-04-03

申请号：US12612974

申请日：2009-11-05

申请人： Bong-Ju Kim ,  Joo-Sun Yoon ,  Yong-Ho Yang ,  Seung-Gyu Tae ,  Jin-Suk Park ,  Hyun-Young Kim ,  Ji-Hye Moon

发明人： Bong-Ju Kim ,  Joo-Sun Yoon ,  Yong-Ho Yang ,  Seung-Gyu Tae ,  Jin-Suk Park ,  Hyun-Young Kim ,  Ji-Hye Moon

IPC分类号： G02F1/1333

CPC分类号： G02F1/13454 ,  G02F2001/133388 ,  G02F2202/42

摘要： A liquid crystal display apparatus includes a lower substrate, an upper substrate and a liquid crystal layer interposed between the lower substrate and the upper substrate. The lower substrate includes a display part for displaying image and a driving part for providing the display part with a driving signal. The upper substrate includes a common electrode and an insulating member that electrically insulates the common electrode from the driving part. The insulating member has a lower dielectric constant than the liquid crystal layer. Thus, a parasitic capacitance between the driving part and the common electrode is reduced to prevent malfunction of the driving part, and a display quality is enhanced.

摘要翻译： 液晶显示装置包括下基板，上基板和插入在下基板和上基板之间的液晶层。 下基板包括用于显示图像的显示部分和用于向显示部分提供驱动信号的驱动部分。 上基板包括公共电极和使公共电极与驱动部分电绝缘的绝缘构件。 绝缘部件的介电常数比液晶层低。 因此，减小驱动部和公共电极之间的寄生电容，以防止驱动部的故障，提高显示质量。