Abstract:
A green-emitting phosphor having the formula AaBbCcOdNe,:RE, wherein A is a positively charged divalent element; B is a positively charged trivalent element; C is a positively charged tetravalent element; and RE is a rare earth activator. The parameter a ranges from about 0.5 to about 1.5; the parameter b ranges from about 0.8 to about 3.0; the parameter c ranges from about 3.5 to about 7.0; the parameter d ranges from about 0.1 to about 3.0; and the parameter e ranges from about 5.0 to about 11.0. A is at least one of Mg, Ca, Sr, Ba, and Zn; B (the letter) is at least one of B (boron), Al, Ga, and In; C (the letter) is at least one of C (carbon), Si, Ge, and Sn; O is oxygen; N is nitrogen; and RE is at least one of Eu, Ce, Pr, Tb, and Mn.
Abstract:
A light emitting device comprises: a thermally conductive substrate (MCPCB); at least one LED mounted in thermal communication with a surface of the substrate; a housing attached to the substrate and configured such the housing and substrate together define a volume that totally encloses the at least one LED, the housing comprising at least a part that is light transmissive (window); and at least one phosphor material provided on an inner surface of the housing within said volume said phosphor being operable to absorb at least a part of the excitation light emitted by the at least one light emitting diode and to emit light of a second wavelength range. The housing is attached to the substrate such that the volume is substantially water tight, preferably air/gas tight.
Abstract:
A solid-state linear lamp comprises a co-extruded component, the co-extruded component comprising an elongate lens and a layer of photoluminescent material. The elongate lens is for shaping light emitted from the lamp and comprises an elongate interior cavity. The layer of a photoluminescent material is located on an interior wall of the elongate interior cavity. The lamp further comprises an array of solid-state light emitters configured to emit light into the elongate interior cavity.
Abstract:
The teachings are generally directed to phosphors having combination coatings with multifunctional characteristics that increase the performance and/or reliability of the phosphor. The teachings include highly reliable phosphors having coatings that contain more than one inorganic component, more than one layer, more than one thicknesses, more than one combination of layers or thicknesses, a gradient-interface between components, a primer thickness or layer to inhibit or prevent leaching of phosphor components into the coatings, a sealant layer to inhibit or prevent entry of moisture or oxygen from the environment, a mixed composition layer as a sealant and multifunctional combination coatings.
Abstract:
There is provided a full spectrum white light emitting device comprising: a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths and wherein broadband light generated by the broadband LED flip chip is composed of a combination of the multiple narrowband light emissions, and wherein the at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm.
Abstract:
A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.
Abstract:
An optocoupler includes a GaN-based Light Emitting Diode (LED) and a GaN-based photo-detector, where at least one of the LED and photo-detector is a flip chip. In some embodiments, the photo-detector comprises a GaN-based LED configured to operate as a photo-detector.
Abstract:
Light emitting devices and LED-filaments comprise an excitation source (e.g. LED) and a photoluminescence material comprising a combination of a first narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 580 nm to 628 nm and a full width at half maximum emission intensity in a range 45 nm to 60 nm and a second narrow-band red photoluminescence material generates light with a peak emission wavelength in a range 628 nm to 640 nm and a full width at half maximum emission intensity in a range 5 nm to 20 nm. At least one of the first and second narrow-band red photoluminescence materials can comprise a narrow-band red phosphor or a quantum dot (QD) material.
Abstract:
A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.
Abstract:
An LED-filament includes a partially light-transmissive substrate; blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament may further include a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.