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    MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES
    25.
    发明申请
    MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES 有权
    铜互连结构中的微观结构修改

    公开(公告)号：US20140127899A1

    公开(公告)日：2014-05-08

    申请号：US14152127

    申请日：2014-01-10

    Applicant: International Business Machines Corporation

    Inventor： Cyril Cabral, JR. ,  Jeffrey P. Gambino ,  Qiang Huang ,  Takeshi Nogami ,  Kenneth P. Rodbell

    IPC: H01L21/768 ,  H01L23/532

    CPC classification number: H01L21/7684 ,  H01L21/2885 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.

    Abstract translation: 金属互连结构和金属互连结构的制造方法。 锰（Mn）被掺入到铜（Cu）互连结构中，以便在90nm以下的技术中改变微观结构以实现竹型晶界。 优选地，竹颗粒在小于“漂白”长度的距离处分离，以便避免通过晶界的铜（Cu）扩散。 添加的Mn还触发Cu颗粒向金属线底部的生长，从而形成达到底面的真正的竹结构，消除沿着金属线长度取向的晶界的Cu扩散机理 。

    INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE
    26.
    发明申请
    INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE 有权
    集成电路斩波器检测和响应

    公开(公告)号：US20140103286A1

    公开(公告)日：2014-04-17

    申请号：US13654078

    申请日：2012-10-17

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Jack O. Chu ,  Gregory M. Fritz ,  Harold J. Hovel ,  Young-Hee Kim ,  Dirk Pfeiffer ,  Kenneth P. Rodbell

    IPC: H01L23/00 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L23/576 ,  G06F21/86 ,  H01L27/24 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and at least one memory cell coupled to the at least one photovoltaic cell. When the at least one photovoltaic cell is exposed to radiation, the at least one photovoltaic cell generates a current that causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and a reactive material coupled to the at least one photovoltaic cell, wherein a current from the at least one photovoltaic cell triggers an exothermic reaction in the reactive material.

    Abstract translation: 本公开涉及具有篡改检测和响应装置的集成电路以及用于制造这种集成电路的方法。 具有篡改检测和响应装置的一个集成电路包括至少一个光伏电池和耦合到该至少一个光伏电池的至少一个存储单元。 当所述至少一个光伏电池暴露于辐射时，所述至少一个光伏电池产生导致所述至少一个存储器单元的存储器状态改变的电流。 具有篡改检测和响应装置的另一集成电路包括至少一个光伏电池和耦合到所述至少一个光伏电池的反应材料，其中来自所述至少一个光伏电池的电流触发所述反应性材料中的放热反应。

    MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES
    27.
    发明申请
    MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES 审中-公开
    铜互连结构中的微观结构修改

    公开(公告)号：US20130285245A1

    公开(公告)日：2013-10-31

    申请号：US13849562

    申请日：2013-03-25

    Applicant: International Business Machines Corporation

    Inventor： Cyril Cabral, Jr. ,  Jeffrey P. Gambino ,  Qiang Huang ,  Takeshi Nogami ,  Kenneth P. Rodbell

    IPC: H01L23/535 ,  H01L21/768

    CPC classification number: H01L21/7684 ,  H01L21/2885 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.

    Abstract translation: 金属互连结构和金属互连结构的制造方法。 锰（Mn）被掺入到铜（Cu）互连结构中，以便在90nm以下的技术中改变微观结构以实现竹型晶界。 优选地，竹颗粒在小于“漂白”长度的距离处分离，以便避免通过晶界的铜（Cu）扩散。 添加的Mn还触发Cu颗粒向金属线底部的生长，从而形成达到底面的真正的竹结构，消除沿着金属线长度取向的晶界的Cu扩散机理 。

    Chemically strengthened glass and methods of making same
    30.
    发明授权
    Chemically strengthened glass and methods of making same 有权

    公开(公告)号：US10112867B2

    公开(公告)日：2018-10-30

    申请号：US15429994

    申请日：2017-02-10

    Applicant: International Business Machines Corporation

    Inventor： Qiang Huang ,  Kenneth P. Rodbell ,  Asli Sahin

    IPC: C03C21/00 ,  C03C3/00

    Abstract: In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

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