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    System and Method for Biasing an RF Circuit
    21.
    发明申请
    System and Method for Biasing an RF Circuit 审中-公开

    公开(公告)号：US20190109574A1

    公开(公告)日：2019-04-11

    申请号：US15728264

    申请日：2017-10-09

    Applicant: Infineon Technologies AG

    Inventor： Nikolay Ilkov ,  Andreas Baenisch ,  Peter Pfann ,  Hans-Dieter Wohlmuth

    IPC: H03G3/30 ,  H03F3/193 ,  H03F1/22 ,  H03F1/02 ,  H03F1/56 ,  H03F3/45 ,  H03B5/12

    Abstract: In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

    Semiconductor devices and a method of detecting a crack
    22.
    发明授权
    Semiconductor devices and a method of detecting a crack 有权

    公开(公告)号：US10147657B2

    公开(公告)日：2018-12-04

    申请号：US15139171

    申请日：2016-04-26

    Applicant: Infineon Technologies AG

    Inventor： Nikolay Ilkov

    IPC: H01L29/10 ,  H01L21/66 ,  H01L23/00

    Abstract: A semiconductor device including an electrical conductive sensor structure connected to a sensor circuit. At least a part of the electrical conductive sensor structure is located below a pad of the semiconductor device. Further, the sensor circuit is configured to detect a value or a change of a value of an electrical parameter associated with the electrical conductive sensor structure indicating a crack within proximity of the pad.

    System and method for a radio frequency switch
    24.
    发明授权
    System and method for a radio frequency switch 有权

    公开(公告)号：US09680463B2

    公开(公告)日：2017-06-13

    申请号：US15364009

    申请日：2016-11-29

    Applicant: Infineon Technologies AG

    Inventor： Winfried Bakalski ,  Nikolay Ilkov

    IPC: H04B1/44 ,  H03K17/16 ,  H03K3/012 ,  H04B1/00 ,  H04B1/04 ,  H04B1/18

    CPC classification number: H03K17/161 ,  H03F3/24 ,  H03K3/012 ,  H03K17/16 ,  H04B1/006 ,  H04B1/0458 ,  H04B1/18 ,  H04B1/44 ,  H04B2001/0408

    Abstract: A circuit includes multiple switching networks coupled between corresponding multiple RF ports and a common RF port. Each of the multiple switching networks includes a first switch between its corresponding RF port and the common RF port. At least one of the multiple switching networks includes a selectable network between the first switch and the common RF port. The selectable network provides a DC path in a first state and a series capacitance in a second state. A control circuit is configured to establish an RF path by activating a first switch and by deactivating other first switches. The control circuit is also configured to establish an RF path by placing a selectable network in the first state when the control circuit operates in a first mode and by placing a selectable network in the second state when the control circuit operates in a second mode.

    System and Method for a Directional Coupler
    25.
    发明申请
    System and Method for a Directional Coupler 有权
    方向耦合器的系统和方法

    公开(公告)号：US20170026020A1

    公开(公告)日：2017-01-26

    申请号：US14804073

    申请日：2015-07-20

    Applicant: Infineon Technologies AG

    Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Nikolay Ilkov

    IPC: H01P5/18 ,  H03H7/38

    CPC classification number: H01P5/184 ,  H03H7/48

    Abstract: In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an input port of the directional coupler, applying a first impedance at a transmitted port of the directional coupler, measuring a first coupled power at a coupled port of the directional coupler after applying the first impedance, applying a second impedance at the transmitted port of the directional coupler, measuring a second coupled power after applying the second impedance, and determining a difference between the first coupled power and the second coupled power to form the coupled power variation.

    Abstract translation: 根据实施例，一种操作定向耦合器的方法包括通过在定向耦合器的输入端口处施加输入信号来确定耦合的功率变化，在定向耦合器的发射端口处施加第一阻抗，测量第一耦合 在施加第一阻抗之后在定向耦合器的耦合端口处的功率，在定向耦合器的发送端口处施加第二阻抗，在施加第二阻抗之后测量第二耦合功率，以及确定第一耦合功率与 第二耦合功率以形成耦合功率变化。

    High-frequency switching circuit
    28.
    发明授权
    High-frequency switching circuit 有权
    高频开关电路

    公开(公告)号：US09246483B2

    公开(公告)日：2016-01-26

    申请号：US13918319

    申请日：2013-06-14

    Applicant: Infineon Technologies AG

    Inventor： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

    IPC: H03K17/687 ,  H03K17/16

    CPC classification number: H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

    Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

    Abstract translation: 高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。 高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。

    System and Method for a Radio Frequency Switch
    29.
    发明申请
    System and Method for a Radio Frequency Switch 有权
    射频开关的系统和方法

    公开(公告)号：US20150349770A1

    公开(公告)日：2015-12-03

    申请号：US14294757

    申请日：2014-06-03

    Applicant: Infineon Technologies AG

    Inventor： Winfried Bakalski ,  Nikolay Ilkov

    IPC: H03K17/16 ,  H04B1/44 ,  H03K3/012

    CPC classification number: H03K17/161 ,  H03F3/24 ,  H03K3/012 ,  H03K17/16 ,  H04B1/006 ,  H04B1/0458 ,  H04B1/18 ,  H04B1/44 ,  H04B2001/0408

    Abstract: In accordance with an embodiment, a circuit includes a plurality of switching networks coupled between a corresponding plurality of RF ports and a common RF port, and a control circuit. Each of the plurality of switching networks includes a first switch coupled between its corresponding RF port and the common RF port, and at least one of the plurality of switching networks includes a selectable network coupled between the first switch and the common RF port, such that the selectable network provides a DC path in a first state and a series capacitance in a second state.

    Abstract translation: 根据实施例，电路包括耦合在对应的多个RF端口和公共RF端口之间的多个交换网络以及控制电路。 多个交换网络中的每一个包括耦合在其对应的RF端口和公共RF端口之间的第一开关，并且多个交换网络中的至少一个交换网络包括耦合在第一交换机和公共RF端口之间的可选网络，使得 可选择的网络提供处于第一状态的DC路径和处于第二状态的串联电容。

    Circuit Comprising an Accelerating Element
    30.
    发明申请
    Circuit Comprising an Accelerating Element 有权
    包括加速元件的电路

    公开(公告)号：US20150008972A1

    公开(公告)日：2015-01-08

    申请号：US13937075

    申请日：2013-07-08

    Applicant: Infineon Technologies AG

    Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Nikolay Ilkov ,  Werner Simbuerger

    IPC: H03K17/042

    CPC classification number: H03K17/04206

    Abstract: A circuit includes a switching element with a first terminal, a second terminal and a control terminal. The circuit also includes an impedance network coupled between the control terminal and a switching node. The circuit also includes a first accelerating element coupled between the control terminal and a first node. The first node is different from the switching node. The circuit is configured to temporarily activate the first accelerating element when a switching state of the switching element is to be changed.

    Abstract translation: 电路包括具有第一端子，第二端子和控制端子的开关元件。 电路还包括耦合在控制终端和交换节点之间的阻抗网络。 电路还包括耦合在控制终端和第一节点之间的第一加速元件。 第一个节点与交换节点不同。 该电路被配置为当切换元件的切换状态被改变时临时激活第一加速元件。

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