公开(公告)号：US20180053663A1

公开(公告)日：2018-02-22

申请号：US15677091

申请日：2017-08-15

Applicant: Infineon Technologies AG

Inventor： Mathias Plappert ,  Stefan Krivec ,  Andreas Riegler ,  Karin Schrettlinger

IPC: H01L21/3215 ,  H01L23/29 ,  H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L23/31

CPC classification number: H01L21/32155 ,  H01L21/76886 ,  H01L23/293 ,  H01L23/298 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L29/0619 ,  H01L29/401 ,  H01L29/417 ,  H01L29/41716 ,  H01L29/66325 ,  H01L29/7393 ,  H01L29/7436

Abstract: In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at least one first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of the barrier layer into the metallization layer.

公开(公告)号：US09685347B2

公开(公告)日：2017-06-20

申请号：US14532129

申请日：2014-11-04

Applicant: Infineon Technologies AG

Inventor： Jochen Hilsenbeck ,  Jens Peter Konrath ,  Stefan Krivec

IPC: H01L23/532 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/768 ,  H01L29/808 ,  H01L29/417 ,  H01L29/10 ,  H01L23/00 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L21/32133 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76852 ,  H01L23/53238 ,  H01L24/05 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/8083 ,  H01L2224/022 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05547 ,  H01L2224/05647 ,  H01L2224/85375 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/0001 ,  H01L2924/00014

Abstract: A semiconductor device comprises a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, comprising amorphous metal nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.

公开(公告)号：US09620466B1

公开(公告)日：2017-04-11

申请号：US14953456

申请日：2015-11-30

Applicant: Infineon Technologies AG

Inventor： Martin Mischitz ,  Markus Heinrici ,  Barbara Eichinger ,  Manfred Schneegans ,  Stefan Krivec

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L24/03 ,  H01L21/02203 ,  H01L21/02513 ,  H01L21/76259 ,  H01L23/53238 ,  H01L24/05 ,  H01L2224/0331 ,  H01L2224/0345 ,  H01L2224/03505 ,  H01L2224/03602 ,  H01L2224/03616 ,  H01L2224/0384 ,  H01L2224/05541 ,  H01L2224/05551 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2924/3511 ,  H01L2924/35121

Abstract: A method of manufacturing an electronic device may include: forming at least one electronic component in a substrate; forming a contact pad in electrical contact with the at least one electronic component; wherein forming the contact pad includes: forming a first layer over the substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface, wherein the second layer has a lower porosity than the first layer.

公开(公告)号：US20160139077A1

公开(公告)日：2016-05-19

申请号：US14930295

申请日：2015-11-02

Applicant: Infineon Technologies AG

Inventor： Sabine Gruber ,  Thomas Aichinger ,  Stefan Krivec ,  Thomas Ostermann

IPC: G01N27/447 ,  G01N27/414 ,  G01N27/27 ,  G01N27/453

CPC classification number: G01N27/44704 ,  G01N27/27 ,  G01N27/414 ,  G01N27/453

Abstract: An apparatus for analyzing ion kinetics in a dielectric probe structure includes an ion reservoir abutting the dielectric probe structure and configured to supply mobile ions to the dielectric probe structure, a capacitor structure configured to generate an electric field in the dielectric probe structure along a vertical direction, and an electrode structure configured to generate an electrophoretic force on mobile ions in the dielectric probe structure along a lateral direction. A method for analyzing ion kinetics in the dielectric probe structure of the apparatus is also provided.

Abstract translation: 用于分析电介质探针结构中的离子动力学的装置包括邻接电介质探针结构并被配置为向介电探针结构提供移动离子的离子储存器，电容器结构，被配置为沿着垂直方向在电介质探针结构中产生电场 以及电极结构，其被配置为沿着横向方向在介电探针结构中的移动离子上产生电泳力。 还提供了用于分析该装置的电介质探针结构中的离子动力学的方法。