公开(公告)号：US07029996B2

公开(公告)日：2006-04-18

申请号：US10294001

申请日：2002-11-13

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: H01L21/20

CPC classification number: B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

Abstract translation: 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化， 均匀注入能量密度控制的激光脉冲具有二维图案的狭缝，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄，以防止在硅薄层区域中引起显着成核 通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化， 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US06908835B2

公开(公告)日：2005-06-21

申请号：US10311485

申请日：2001-04-19

Applicant: Robert S. Sposili ,  James S. Im

Inventor： Robert S. Sposili ,  James S. Im

IPC: B23K26/06 ,  B23K26/08 ,  C30B13/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/36

CPC classification number: H01L21/02686 ,  B23K26/066 ,  B23K26/08 ,  B23K26/082 ,  B23K2101/40 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268

Abstract: A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned, at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation beam pulses occurs in a scanning direction on the film sample between the first edge and the second edge. During the continuous scanning of the film sample, a plurality of first areas of the film sample are successively irradiated using the first beamlets of the irradiation beam pulses so that the first areas are melted throughout their thickness and leaving unirradiated regions between respective adjacent ones of the first areas. Also during the continuous scanning, each one of the first areas irradiated using the first beamlets of each of the irradiation beam pulses is allowed to re-solidify and crystalize. During resolidification and crystallization of the first areas, a plurality of second areas of the film sample are successively irradiated using the second beamlets of the irradiation beam pulses so that the second areas are melted throughout their thickness. Each of the second areas partially overlaps a respective pair of the re-solidified and crystalized first areas and the respective unirradiated region therebetween.

公开(公告)号：US06635554B1

公开(公告)日：2003-10-21

申请号：US09816265

申请日：2001-03-23

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: C30B2120

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026

Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating fluence of the excimer laser pulses, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a mask for masking portions of the homoginized modulated laser pulses into patterned beamlets, a sample stage for receiving the patterned beamlets to effect melting of portions of any amorphous silicon thin film sample placed thereon corresponding to the beamlets, translating means for controllably translating a relative position of the sample stage with respect to a position of the mask and a computer for controlling the controllable fluence modulation of the excimer laser pulses and the controllable relative positions of the sample stage and mask, and for coordinating excimer pulse generation and fluence modulation with the relative positions of the sample stage and mask, to thereby process amorphous silicon thin film sample into a single or polycrystalline silicon thin film by sequential translation of the sample stage relative to the mask and irradiation of the sample by patterned beamlets of varying fluence at corresponding sequential locations thereon.

Abstract translation: 公开了将非晶硅薄膜样品加工成单个或多晶硅薄膜的系统和方法。 该系统包括用于产生预定能量密度的多个准分子激光脉冲的准分子激光器，用于可控地调制准分子激光脉冲的注量的能量密度调制器，用于在预定平面中均匀化调制的激光脉冲的光束均质器，用于掩蔽的掩模 将均质化的调制的激光脉冲的部分转换成图案化的子束，用于接收图案化的子束以实现对应于子束放置在其上的任何非晶硅薄膜样品的部分熔化的样品台，用于可控地平移样品台的相对位置的平移装置 相对于掩模的位置和用于控制准分子激光脉冲的可控注量调制和样品级和掩模的可控相对位置的计算机，并且用于将准分子脉冲产生和注量调制与样品的相对位置协调 舞台和面具，从而处理爱人 光硅薄膜样品通过样品台相对于掩模的顺序平移和通过在其上的相应顺序位置处具有变化的能量密度的图案化的子束照射样品而变成单个或多晶硅薄膜。

公开(公告)号：US09087696B2

公开(公告)日：2015-07-21

申请号：US13505961

申请日：2010-11-02

Applicant: James S. Im ,  Yikang Deng ,  Qiongying Hu ,  Ui-Jin Chung ,  Alexander B. Limanov

Inventor： James S. Im ,  Yikang Deng ,  Qiongying Hu ,  Ui-Jin Chung ,  Alexander B. Limanov

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/04 ,  H01L21/67 ,  H01L29/786 ,  B23K26/00 ,  H01L21/268 ,  H01L27/12

CPC classification number: H01L21/02686 ,  B23K26/083 ,  B23K26/354 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/707 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678

Abstract: In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.

Abstract translation: 一方面，本公开内容涉及一种处理薄膜的方法，包括当沿着第一选定方向前进薄膜时，用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，每个激光器 脉冲提供成形的束并且具有足以使薄膜部分熔融并且第一区域重新凝固和结晶以形成第一结晶区域的能量密度，并且用第三激光脉冲和第三激光脉冲照射薄膜的第二区域 第四激光脉冲，每个脉冲提供成形光束并且具有足以部分熔化薄膜并且第二区域重新凝固和结晶以形成第二结晶区域的能量密度，其中第一激光脉冲和 第二激光脉冲小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。

公开(公告)号：US08796159B2

公开(公告)日：2014-08-05

申请号：US11373772

申请日：2006-03-09

Applicant: James S. Im ,  Paul Christiaan van der Wilt

Inventor： James S. Im ,  Paul Christiaan van der Wilt

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B35/00 ,  G21K5/02 ,  G21K5/10 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

Abstract: Process and system for processing a thin film sample, as well as at least one portion of the thin film structure are provided. Irradiation beam pulses can be shaped to define at least one line-type beam pulse, which includes a leading portion, a top portion and a trailing portion, in which at least one part has an intensity sufficient to at least partially melt a film sample. Irradiating a first portion of the film sample to at least partially melt the first portion, and allowing the first portion to resolidify and crystallize to form an approximately uniform area therein. After the irradiation of the first portion of the film sample, irradiating a second portion using a second one of the line-type beam pulses to at least partially melt the second portion, and allowing the second portion to resolidify and crystallize to form an approximately uniform area therein. A section of the first portion impacted by the top portion of the first one of the line-type beam pulses is prevented from being irradiated by trailing portion of the second one of the line-type beam pulses.

Abstract translation: 提供了用于处理薄膜样品的方法和系统，以及薄膜结构的至少一部分。 辐射束脉冲可以被成形为限定至少一个线型束脉冲，其包括前导部分，顶部部分和尾部部分，其中至少一个部分具有足以至少部分地熔化膜样品的强度。 辐射薄膜样品的第一部分以至少部分地熔化第一部分，并允许第一部分重新凝固并结晶以在其中形成大致均匀的区域。 在照射第一部分薄膜样品之后，使用第二种线型束脉冲照射第二部分以至少部分地熔化第二部分，并允许第二部分重新凝固并结晶以形成近似均匀的 区域。 由第一线路型光束脉冲的顶部部分影响的第一部分的一部分被第二线路型光束脉冲的后部部分照射。

公开(公告)号：US08569155B2

公开(公告)日：2013-10-29

申请号：US12919681

申请日：2009-02-27

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/425

CPC classification number: H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2686 ,  H01L21/67115

Abstract: The disclosed subject matter generally relates a method of irradiating a large area thin film with a pulsed light source. In some embodiments, the disclosed subject matter particularly relates to utilizing flash lamp annealing in combination with patterning techniques for making thin film devices. The flash lamp annealing can trigger lateral growth crystallization or explosive crystallization in large area thin films. In some embodiments, capping layers or proximity masks can be used in conjunction with the flash lamp annealing.

Abstract translation: 所公开的主题通常涉及用脉冲光源照射大面积薄膜的方法。 在一些实施例中，所公开的主题特别涉及利用闪光灯退火与用于制造薄膜器件的图案化技术相结合。 闪光灯退火可以在大面积薄膜中触发横向生长结晶或爆炸结晶。 在一些实施例中，封盖层或接近掩模可以与闪光灯退火相结合使用。

公开(公告)号：US08440581B2

公开(公告)日：2013-05-14

申请号：US12776756

申请日：2010-05-10

Applicant: James S. Im ,  Ui-Jin Chung ,  Alexander B. Limanov ,  Paul C. Van Der Wilt

Inventor： James S. Im ,  Ui-Jin Chung ,  Alexander B. Limanov ,  Paul C. Van Der Wilt

IPC: H01L21/00

CPC classification number: H01L21/268 ,  B23K26/354 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296

Abstract: The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.

Abstract translation: 所公开的用于非周期脉冲顺序侧向凝固的系统和方法涉及加工薄膜。 用于在选择的方向上推进薄膜的同时进行薄膜的处理的方法包括用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，并用第三激光器照射薄膜的第二区域 脉冲和第四激光脉冲，其中第一激光脉冲和第二激光脉冲之间的时间间隔小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。 在一些实施例中，每个脉冲提供成形梁并且具有足够的能量密度，以在其厚度上熔化薄膜以形成冷却时横向结晶的熔融区域。 在一些实施例中，第一和第二区域彼此相邻。 在一些实施例中，第一和第二区域间隔一段距离。

公开(公告)号：US07759230B2

公开(公告)日：2010-07-20

申请号：US11370000

申请日：2006-03-07

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/20

CPC classification number: B23K26/0676 ,  B23K26/066 ,  B23K26/073 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691

Abstract: An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. According to this invention, the edge areas of the previously irradiated and resolidified areas which likely have artifacts provided therein are overlapped by the subsequent beamlets. In this manner, the edge areas of the previously resolidified irradiated areas and artifacts therein are completely melted throughout their thickness. At least the subsequent beamlets are shaped such that the grains of the previously irradiated and resolidified areas which border the edge areas melted by the subsequent beamlets grow into these resolidifying edges areas so as to substantially reduce or eliminate the artifacts.

Abstract translation: 用于实现在样品上提供的薄膜的单扫描连续运动连续横向固化的布置，处理和掩模，使得在辐射薄膜的子束边缘处形成的伪影显着减少。 根据本发明，先前照射和重新固化的区域中可能具有伪像的边缘区域被随后的子束重叠。 以这种方式，先前重新固化的照射区域的边缘区域和其中的伪像在其整个厚度中完全熔化。 至少后续的子束被成形为使得先前照射和重新固化的区域的与随后的子束熔化的边缘区域相邻的区域的晶粒生长成这些再凝固边缘区域，以便基本上减少或消除伪影。

公开(公告)号：US07718517B2

公开(公告)日：2010-05-18

申请号：US10524809

申请日：2003-08-19

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  B23K26/066 ,  H01L21/02 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/324 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1088

Abstract: High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more beamlets using patterning masks. The mask patterns have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beamlets have dimensions and orientations that are conducive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the work piece at high speeds. Position sensitive triggering of a laser can be used generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage.

Abstract translation: 提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。 用激光束照射薄膜半导体工件以熔化暴露于激光束的表面的目标区域的再结晶。 使用图案掩模将激光束成形为一个或多个子束。 掩模图案具有适当的尺寸和取向以对激光束辐射进行图案，使得由子束靶向的区域具有有利于半导体重结晶的尺寸和取向。 工件沿着相对于激光束的线性路径被机械平移，以高速处理工件的整个表面。 可以使用位置敏感的激光触发来产生激光束脉冲，以在半导体材料在电动平台上平移时在工件表面上的精确位置处熔融和再结晶半导体材料。

公开(公告)号：US20100099273A1

公开(公告)日：2010-04-22

申请号：US12644273

申请日：2009-12-22

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/26 ,  B23K26/02

CPC classification number: H01L21/0268 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  Y10S117/904

Abstract: A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to the direction of primary crystallization.

Abstract translation: 提供了一种系统，方法和掩蔽装置，其提供使用修改的掩模图案使用顺序横向固化提高的多晶晶粒的宽度。 一个示例性的掩模图案采用行金刚石或圆形区域，以便控制垂直于一次结晶方向的晶粒的宽度。