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54 条记录 (耗时 0.045 秒)

    BOLOMETER AND METHOD OF MANUFACTURING THE SAME
    23.
    发明申请
    BOLOMETER AND METHOD OF MANUFACTURING THE SAME 审中-公开
    测量仪及其制造方法

    公开(公告)号：US20080135758A1

    公开(公告)日：2008-06-12

    申请号：US11776945

    申请日：2007-07-12

    申请人： Woo Seok YANG ,  Seong Mok Cho ,  Hojun Ryu ,  Byoung Gon Yu

    发明人： Woo Seok YANG ,  Seong Mok Cho ,  Hojun Ryu ,  Byoung Gon Yu

    IPC分类号： G01J5/00 ,  H01L21/00 ,  H01L27/14

    CPC分类号： H01L27/14669 ,  G01J5/20 ,  H01L27/14683

    摘要： Provided are a bolometer and a method of manufacturing the bolometer. The bolometer includes: a semiconductor substrate comprising a detection circuit; a reflective layer disposed in an area of a surface of the semiconductor substrate; metal pads disposed on the surface of the semiconductor substrate beside both sides of the reflective layer to keep predetermined distances from the both sides of the reflective layer; and a sensor structure forming a space corresponding to quarter of an infrared wavelength (λ/4) from a surface of the reflective layer and positioned above the semiconductor substrate, wherein the sensor structure includes: a body including a polycrystalline resistive layer formed of one of doped Si and Si1-xGex (where x=0.2˜0.5) to be positioned above the reflective layer; and support arms positioned outside the body to be electrically connected to the metal pads.

    摘要翻译： 提供测辐射热度计和制造测辐射热计的方法。 测辐射热计包括：包括检测电路的半导体衬底; 设置在所述半导体衬底的表面的区域中的反射层; 设置在半导体衬底的表面上的金属焊盘，位于反射层的两侧，以保持与反射层两侧的预定距离; 以及传感器结构，其从所述反射层的表面形成对应于红外波长（λ/ 4）的四分之一并位于所述半导体衬底上方的空间，其中所述传感器结构包括：主体，包括由以下之一形成的多晶电阻层： 掺杂的Si和Si 1-x Ge x x（其中x = 0.2〜0.5）位于反射层上方; 以及位于主体外部的支撑臂，以电连接到金属垫。

    Ferroelectric memory cell array and method of storing data using the same
    24.
    发明授权
    Ferroelectric memory cell array and method of storing data using the same 有权
    铁电存储单元阵列及使用其存储数据的方法

    公开(公告)号：US06636435B2

    公开(公告)日：2003-10-21

    申请号：US10032987

    申请日：2001-12-27

    申请人： Yil Suk Yang ,  Tae Moon Roh ,  Jong Dae Kim ,  Byoung Gon Yu

    发明人： Yil Suk Yang ,  Tae Moon Roh ,  Jong Dae Kim ,  Byoung Gon Yu

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： The present invention relates to a ferroelectric memory cell array formed of a single transistor, and method of storing data using the same. The ferroelectric memory cell array includes a plurality of word lines connected to gates of the memory cells located at respective rows, a plurality of bit lines connected to drains of the memory cells located at respective columns, a common source line commonly connecting sources of the memory cells, and a plurality of well lines each connected to wells in which the memory cells are each formed, wherein a bias voltage of an unit pulse shape is applied to a gate of a selected memory cell and a bias voltage of a pulse shape is applied to a well line. Therefore, the present invention allows a random access without a disturbance since data can be written by means of the polarity characteristic of the ferroelectric.

    摘要翻译： 本发明涉及由单个晶体管形成的铁电存储单元阵列，以及使用该晶体管存储数据的方法。 铁电存储单元阵列包括连接到位于各行的存储单元的栅极的多条字线，连接到位于相应列的存储单元的漏极的多个位线，通常连接存储器的源极的公共源极线 单元和多个井管线，每个阱管线连接到其中形成有存储单元的阱，其中单位脉冲形状的偏置电压被施加到所选存储单元的栅极并施加脉冲形状的偏置电压 到一条井线 因此，本发明允许无障碍地随机存取，因为可以通过铁电体的极性特性写入数据。

    Method for fabricating phase change memory device using solid state reaction
    27.
    发明授权
    Method for fabricating phase change memory device using solid state reaction 有权
    使用固态反应制造相变存储器件的方法

    公开(公告)号：US08470719B2

    公开(公告)日：2013-06-25

    申请号：US13110579

    申请日：2011-05-18

    申请人： Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

    发明人： Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

    IPC分类号： H01L21/461 ,  H01L21/06

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1608 ,  H01L45/1666

    摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。 该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层 形成第二反应物层的材料。 相变存储器件消耗低功率并以高速运行。

    Infrared sensor and method of fabricating the same
    28.
    发明授权
    Infrared sensor and method of fabricating the same 失效
    红外线传感器及其制造方法

    公开(公告)号：US08053730B2

    公开(公告)日：2011-11-08

    申请号：US12511251

    申请日：2009-07-29

    申请人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auk Choi

    发明人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auk Choi

    IPC分类号： G01J5/02

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/10 ,  H01L31/022408 ,  H01L31/108

    摘要： An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.

    摘要翻译： 提供了一种红外线传感器及其制造方法。 该传感器包括：基板，包括反射层和多个焊盘电极;连接到焊盘电极并形成为与反射层隔开预定距离的叉指感测电极，以及形成在感测电极上的感测层， 连接到一个焊盘区域的感测电极的交错区域与连接到另一个焊盘电极的感测电极分离的部分露出。 因此，传感器具有非常简单的结构的电极和分为矩形块的感测层，从而可以去除不均匀地流入电极的电流。 因此，可以实现感测层的电流可以均匀地流动并且噪声降低的传感器。

    MULTILAYER-STRUCTURED BOLOMETER AND METHOD OF FABRICATING THE SAME
    30.
    发明申请
    MULTILAYER-STRUCTURED BOLOMETER AND METHOD OF FABRICATING THE SAME 失效
    多层结构的玻璃及其制造方法

    公开(公告)号：US20090152467A1

    公开(公告)日：2009-06-18

    申请号：US12182456

    申请日：2008-07-30

    申请人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01J5/10 ,  H01L21/00

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023

    摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.

    摘要翻译： 提供一种多层结构的测辐射热计及其制造方法。 在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。 因此，传感器结构通过仅一个支撑臂与基板电连接。 根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。 此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。