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公开(公告)号：US20100171135A1
公开(公告)日：2010-07-08
申请号：US12596170
申请日：2008-04-24
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sahathil
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sahathil
IPC分类号： H01L33/10
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.
摘要翻译： 本发明涉及一种具有半导体层序列（2）的光电子半导体本体，该半导体层序列（2）包括适于产生电磁辐射的有源层（23）和第一和第二电连接层（4,6），其中半导体本体是 用于从前侧发射电磁辐射，第一和第二电连接层位于与前侧相对的后侧并且通过分离层（5）彼此电绝缘，第一电连接层 （4），第二电连接层（6）和分离层（5）横向重叠，并且第二电连接层（6）的从后侧穿过穿透（3）延伸穿过的部分区域 活性层（23）。 本发明还涉及一种用于制造这种光电半导体本体的方法。
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公开(公告)号：US09620680B2
公开(公告)日：2017-04-11
申请号：US13123713
申请日：2009-09-30
申请人： Karl Engl , Matthias Sabathil
发明人： Karl Engl , Matthias Sabathil
CPC分类号： H01L33/382 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body for emitting electromagnetic radiation from the front side with a semiconductor layer sequence and a first electrical contact layer, wherein the semiconductor layer sequence comprises at least one opening that penetrates fully through the semiconductor layer sequence in the direction from the front side to the rear side that is opposite the front side, the first electrical contact layer is arranged at the rear of the semiconductor body, a section of the first electrical contact layer extends from the rear side through the opening to the front side and covers a first sub-region of a front-side main face of the semiconductor layer sequence, and a second sub-region of the front-side main face is not covered by the first electrical contact layer.
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公开(公告)号：US20140319566A1
公开(公告)日：2014-10-30
申请号：US14240443
申请日：2012-08-23
申请人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
发明人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
CPC分类号： H01L33/60 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.
摘要翻译： 发光二极管芯片包括具有产生电磁辐射的有源层的半导体层序列，其中发光二极管芯片在前侧具有辐射出射区域，发光二极管芯片至少在一个 背面位于辐射出口区域的对面，所述镜面层含有银，保护层设置在镜面层上，保护层包括透明导电氧化物。
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公开(公告)号：US08872209B2
公开(公告)日：2014-10-28
申请号：US13581417
申请日：2011-02-15
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.
摘要翻译： 发光二极管芯片包括半导体层序列，所述半导体层序列具有产生电磁辐射的有源层，其中所述发光二极管芯片在前侧具有辐射出射区域。 在与辐射出口区域相对的后侧，发光二极管芯片至少在区域中具有含有银的镜面层。 降低镜面层的腐蚀和/或改善粘合性的功能层被布置在镜面层上，其中形成功能层的材料也分布在整个镜面层中。 功能层的材料在镜面层中具有浓度梯度，其中镜面层中的功能层的材料的浓度从功能层朝向半导体层序列的方向减小。
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公开(公告)号：US08716724B2
公开(公告)日：2014-05-06
申请号：US13127328
申请日：2009-11-27
申请人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
发明人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.
摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。
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公开(公告)号：US08450751B2
公开(公告)日：2013-05-28
申请号：US12596170
申请日：2008-04-24
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.
摘要翻译： 光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。 半导体本体被设置用于从前侧发射电磁辐射。 第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。 第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。 此外，规定了这种光电子半导体体的制造方法。
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27.发明授权Method of producing a radiation-emitting thin film component and radiation-emitting thin film component 有权制造发射辐射的薄膜组分和发射辐射的薄膜组分的方法公开(公告)号：US08420439B2
公开(公告)日：2013-04-16
申请号：US13123410
申请日：2009-10-19
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , B82Y20/00 , H01L33/0079 , H01L33/32 , H01L33/44
摘要： A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.
摘要翻译： 一种制造辐射发射薄膜部件的方法包括提供衬底，在衬底上生长纳米棒，在纳米棒上外延生长具有至少一个活性层的半导体层序列，向半导体层序列施加载体，并将 半导体层序列和载体通过纳米棒的至少部分破坏从衬底。
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公开(公告)号：US08319250B2
公开(公告)日：2012-11-27
申请号：US12991864
申请日：2009-04-17
申请人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
发明人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
IPC分类号： H01L33/38
CPC分类号： H01L25/167 , H01L33/0079 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).
摘要翻译： 提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。 半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。 载体（5）包括面向半导体本体（2）的主表面（51）。 第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。 第二半导体层（22）可通过第二接触件（36）电接触。 保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。
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29.发明授权公开(公告)号：US08283191B2
公开(公告)日：2012-10-09
申请号：US12990243
申请日：2009-06-09
申请人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
发明人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/62 , H01L2224/48
摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。
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公开(公告)号：US20110049555A1
公开(公告)日：2011-03-03
申请号：US12921379
申请日：2009-03-13
申请人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
发明人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
CPC分类号： H01L33/382 , H01L33/10 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.
摘要翻译： 光电子半导体芯片具有半导体层序列，该半导体层序列具有在第一导电类型的层和第二导电类型的层之间产生辐射的有源层。 第一导电类型的层与半导体层序列的正面相邻。 半导体层序列包含从半导体层序列通过有源层延伸到第一导电类型的层的从前侧的与背面相对的至少一个切口。 第一导电类型的层通过第一电连接层通过切口电连接，第一电连接层至少在某些地方覆盖半导体层序列的后侧。
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