公开(公告)号：US08716724B2

公开(公告)日：2014-05-06

申请号：US13127328

申请日：2009-11-27

申请人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Höppel ,  Jürgen Moosburger

发明人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Höppel ,  Jürgen Moosburger

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L27/156 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。

公开(公告)号：US09054016B2

公开(公告)日：2015-06-09

申请号：US13123421

申请日：2009-10-29

申请人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

发明人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L25/16 ,  H01L33/08 ,  H01L33/38

CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

公开(公告)号：US20110260205A1

公开(公告)日：2011-10-27

申请号：US13123421

申请日：2009-10-29

申请人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

发明人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

IPC分类号： H01L33/62

CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

公开(公告)号：US20120299049A1

公开(公告)日：2012-11-29

申请号：US13497733

申请日：2010-09-10

申请人： Patrick Rode ,  Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil ,  Jürgen Moosburger

发明人： Patrick Rode ,  Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil ,  Jürgen Moosburger

IPC分类号： H01L33/48 ,  H01R43/16

CPC分类号： H01L27/153 ,  G01R31/318516 ,  H01H85/0417 ,  H01H85/32 ,  H01L23/5256 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L51/50 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2924/0002 ,  H02H3/046 ,  H03K17/74 ,  H03K19/17728 ,  H05B33/083 ,  H05B33/0893 ,  Y10T29/49204

摘要： An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.

摘要翻译： 光电子半导体芯片具有带有第一端子和第二端子的第一半导体功能区域。 接触结构与光电子半导体芯片电接触。 接触结构电连接到第一半导体功能区。 接触结构具有可断开的导体结构。 如果导体结构不断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流通路。 如果导体结构断开，则该路径中断。 或者，如果导体结构断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流路径。 如果导体结构未断开，则导体结构将第一端子连接到第二端子并使第一半导体功能区域短路。

公开(公告)号：US20140145610A1

公开(公告)日：2014-05-29

申请号：US13820181

申请日：2011-08-24

申请人： Patrick Rode ,  Norwin von Malm ,  Lutz Höppel

发明人： Patrick Rode ,  Norwin von Malm ,  Lutz Höppel

IPC分类号： F21K99/00 ,  F21V23/02

CPC分类号： F21K9/50 ,  F21K9/60 ,  F21V7/00 ,  F21V23/02 ,  F21V23/023 ,  F21Y2115/10 ,  H01L41/107

摘要： A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter.

摘要翻译： 发光二极管装置具有至少一个输出侧连接的框形压电变压器，并且具有产生电磁辐射的发光二极管模块，该模块设置在框形压电变压器内并电连接到 通过至少一个输出侧电导体的压电变压器的输出侧连接，其中由发光二极管模块在压电变压器的方向上发射的辐射在后者处被反射。

公开(公告)号：US08816585B2

公开(公告)日：2014-08-26

申请号：US13820181

申请日：2011-08-24

申请人： Patrick Rode ,  Norwin von Malm ,  Lutz Höppel

发明人： Patrick Rode ,  Norwin von Malm ,  Lutz Höppel

IPC分类号： H01J7/44 ,  H01J13/46 ,  H01J17/34 ,  H01J19/78 ,  H01J23/16 ,  H01J29/96 ,  H01K1/62 ,  F21V23/02 ,  F21V7/00 ,  H01L41/107 ,  F21K99/00 ,  F21Y101/02

CPC分类号： F21K9/50 ,  F21K9/60 ,  F21V7/00 ,  F21V23/02 ,  F21V23/023 ,  F21Y2115/10 ,  H01L41/107

摘要： A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected at the latter.

摘要翻译： 发光二极管装置具有至少一个输出侧连接的框形压电变压器，并且具有产生电磁辐射的发光二极管模块，该模块设置在框形压电变压器内并电连接到 压电变压器的输出侧连接由至少一个输出侧电导体，其中由发光二极管模块在压电变压器的方向上发射的辐射在后者处被反射。

公开(公告)号：US08956897B2

公开(公告)日：2015-02-17

申请号：US13598896

申请日：2012-08-30

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L33/38 ,  H01L33/22 ,  H01L33/14 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US20120322186A1

公开(公告)日：2012-12-20

申请号：US13598896

申请日：2012-08-30

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L33/12

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US08283191B2

公开(公告)日：2012-10-09

申请号：US12990243

申请日：2009-06-09

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L21/00 ,  H01L33/22 ,  H01L33/38

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US20110104836A1

公开(公告)日：2011-05-05

申请号：US12990243

申请日：2009-06-09

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。