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1.发明授权公开(公告)号：US08956897B2
公开(公告)日：2015-02-17
申请号：US13598896
申请日：2012-08-30
申请人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
发明人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/62 , H01L2224/48
摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。
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2.发明申请公开(公告)号：US20120322186A1
公开(公告)日：2012-12-20
申请号：US13598896
申请日：2012-08-30
申请人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
发明人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
IPC分类号： H01L33/12
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/62 , H01L2224/48
摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。
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3.发明授权公开(公告)号：US08283191B2
公开(公告)日：2012-10-09
申请号：US12990243
申请日：2009-06-09
申请人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
发明人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/62 , H01L2224/48
摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。
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4.发明申请公开(公告)号：US20110104836A1
公开(公告)日：2011-05-05
申请号：US12990243
申请日：2009-06-09
申请人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
发明人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/62 , H01L2224/48
摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。
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公开(公告)号：US09054016B2
公开(公告)日：2015-06-09
申请号：US13123421
申请日：2009-10-29
申请人： Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
发明人： Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
CPC分类号： H01L27/15 , H01L25/167 , H01L33/005 , H01L33/02 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.
摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。
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公开(公告)号：US20110260205A1
公开(公告)日：2011-10-27
申请号：US13123421
申请日：2009-10-29
申请人： Jürgen Moosburger , Norwin Von Malm , Patrick Rode , Lutz Höppel , Karl Engl
发明人： Jürgen Moosburger , Norwin Von Malm , Patrick Rode , Lutz Höppel , Karl Engl
IPC分类号： H01L33/62
CPC分类号： H01L27/15 , H01L25/167 , H01L33/005 , H01L33/02 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.
摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。
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公开(公告)号：US20130193450A1
公开(公告)日：2013-08-01
申请号：US13696602
申请日：2011-04-29
申请人： Werner Bergbauer , Lutz Höppel , Philipp Drechsel , Christopher Kölper , Martin Strassburg , Patrick Rode
发明人： Werner Bergbauer , Lutz Höppel , Philipp Drechsel , Christopher Kölper , Martin Strassburg , Patrick Rode
CPC分类号： H01L33/02 , H01L31/02 , H01L31/02327 , H01L31/02363 , H01L31/18 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , Y02E10/50
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.
摘要翻译： 光电子半导体芯片包括半导体层堆叠和辐射出射面或辐射入射面，其中半导体层堆叠包括产生或接收电磁辐射的有源层，和布置在半导体层堆叠中和/或之上的多个纳米结构 辐射出口或入射面，至少一些纳米结构包括至少一个子结构。
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公开(公告)号：US08716724B2
公开(公告)日：2014-05-06
申请号：US13127328
申请日：2009-11-27
申请人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
发明人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.
摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。
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公开(公告)号：US08907359B2
公开(公告)日：2014-12-09
申请号：US13124707
申请日：2009-09-16
申请人： Martin Strassburg , Lutz Höppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
发明人： Martin Strassburg , Lutz Höppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
CPC分类号： H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).
摘要翻译： 一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5） 区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1） 面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。
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公开(公告)号：US09806223B2
公开(公告)日：2017-10-31
申请号：US12985903
申请日：2011-01-06
申请人： Magnus Ahlstedt , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
发明人： Magnus Ahlstedt , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L33/0079 , H01L33/16
摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.
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