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31 条记录 (耗时 0.074 秒)

    Continuous system for depositing films onto plastic bottles and method
    21.
    发明授权
    Continuous system for depositing films onto plastic bottles and method 有权
    用于将薄膜沉积在塑料瓶上的连续系统和方法

    公开(公告)号：US07513953B1

    公开(公告)日：2009-04-07

    申请号：US10992033

    申请日：2004-11-17

    申请人： John T. Felts

    发明人： John T. Felts

    IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/503 ,  C23C16/54

    CPC分类号： C23C14/046 ,  C23C14/56

    摘要： A bottle processing apparatus includes a rotary bottle vacuum transfer system and a bottle coating system. The rotary bottle vacuum transfer system takes bottles from atmospheric pressure and transfers the bottles to the bottle coating system at a sub-atmospheric pressure in a continuous assembly line fashion. In the bottle coating system, a thin film coating having barrier properties is formed on at least one surface of the bottles in a continuous assembly line fashion. After formation of the thin film coating, the rotary bottle vacuum transfer system returns the bottles from the sub-atmospheric pressure region of the bottle coating system back to atmospheric pressure in a continuous assembly line fashion.

    摘要翻译： 瓶加工装置包括旋转瓶真空转移系统和瓶涂系统。 旋转瓶真空转移系统从大气压下取瓶，并以连续装配线的方式将瓶子以低于大气压的压力转移到瓶子涂层系统。 在瓶涂系统中，以连续的装配线方式在瓶的至少一个表面上形成具有阻隔性能的薄膜涂层。 在形成薄膜涂层之后，旋转瓶真空传送系统将瓶子从瓶涂系统的次大气压力区域以连续的装配线方式返回到大气压力。

    Apparatus for plasma deposition of a thin film onto the interior surface of a container
    22.
    发明授权
    Apparatus for plasma deposition of a thin film onto the interior surface of a container 失效
    用于将薄膜等离子体沉积到容器的内表面上的装置

    公开(公告)号：US6112695A

    公开(公告)日：2000-09-05

    申请号：US728283

    申请日：1996-10-08

    申请人： John T. Felts

    发明人： John T. Felts

    IPC分类号： C23C16/04 ,  C23C16/40 ,  H01J37/32 ,  C23C16/00

    CPC分类号： H01J37/32082 ,  C23C16/045 ,  C23C16/402

    摘要： A gas inlet, which also serves as a counter electrode, is located inside of a vacuum chamber made of an electrically insulating material. A container is mounted on a mandrel mounted on the gas inlet. The chamber is evacuated to a subatmospheric pressure. A process gas is then introduced into the container through the gas inlet. The process gas is ionized by coupling RF power to a main electrode located adjacent an exterior surface of the chamber and to the gas inlet which deposits a plasma enhanced chemical vapor deposition (PECVD) thin film onto the interior surface of the container.

    摘要翻译： 也用作对电极的气体入口位于由电绝缘材料制成的真空室的内部。 容器安装在安装在气体入口上的心轴上。 将室抽真空至低于大气压。 然后将工艺气体通过气体入口引入容器中。 通过将RF功率耦合到位于室的外表面附近的主电极和将等离子体增强化学气相沉积（PECVD）薄膜沉积到容器的内表面上的气体入口而将工艺气体电离。

    Thin gas barrier films
    23.
    发明授权
    Thin gas barrier films 失效
    薄阻气膜

    公开(公告)号：US5434008A

    公开(公告)日：1995-07-18

    申请号：US149160

    申请日：1993-11-08

    申请人： John T. Felts

    发明人： John T. Felts

    IPC分类号： B32B9/00 ,  B65D65/42 ,  C08J7/04 ,  C23C14/06 ,  C23C14/10 ,  B32B15/08

    CPC分类号： C23C14/10 ,  B65D65/42 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31692 ,  Y10T428/31786

    摘要： Films are coated on substrates, useful for applications such as packaging, having a substantially continuous inorganic matrix in which organosilicon moieties are discontinuously dispersed. The inorganic matrix is formed by evaporating an inorganic source within a evacuated chamber while at the same time flowing vaporized organosilicon into the chamber adjacent to an electrically isolated substrate.

    摘要翻译： 将膜涂覆在基材上，可用于诸如包装的应用，具有基本上连续的无机基质，其中有机硅部分被不连续地分散。 通过在真空室内蒸发无机源形成无机基质，同时将汽化的有机硅流入邻近电隔离基底的室中。

    STAIN-RESISTANT CONTAINER AND METHOD
    24.
    发明申请
    STAIN-RESISTANT CONTAINER AND METHOD 审中-公开
    耐腐蚀容器和方法

    公开(公告)号：US20120128896A1

    公开(公告)日：2012-05-24

    申请号：US12950760

    申请日：2010-11-19

    申请人： Edward B. Tucker ,  John T. Felts ,  David K. Heitman

    发明人： Edward B. Tucker ,  John T. Felts ,  David K. Heitman

    IPC分类号： C23C16/513 ,  C23C16/40

    CPC分类号： C23C16/045 ,  C23C16/02 ,  C23C16/401 ,  C23C16/4485 ,  C23C16/509

    摘要： Stain resistant containers can be prepared in a three step process involving treatment with a nitrogen gas plasma, depositing a plasma enhanced chemical vapor deposition (PECVD) organosilicon thin film onto the interior surface of the container, followed by treatment with an oxygen gas plasma. An apparatus for the process is described, including an automated apparatus for treating multiple containers and multiple chambers of containers.

    摘要翻译： 耐污染容器可以通过三步法制备，包括用氮气等离子体处理，将等离子体增强化学气相沉积（PECVD）有机硅薄膜沉积到容器的内表面上，然后用氧气等离子体处理。 描述了用于该方法的设备，包括用于处理多个容器和多个容器室的自动化设备。

    Method of forming a film on a substrate
    26.
    发明授权
    Method of forming a film on a substrate 有权
    在基材上形成膜的方法

    公开(公告)号：US06177142B1

    公开(公告)日：2001-01-23

    申请号：US09325014

    申请日：1999-06-02

    申请人： John T. Felts

    发明人： John T. Felts

    IPC分类号： C23C16452

    CPC分类号： B05D1/62 ,  C23C16/401 ,  C23C16/448 ,  C23C16/507 ,  H01M4/0421 ,  H01M4/13

    摘要： An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber. After the vacuum chamber is pumped down to a subatmospheric pressure, a first process gas such as argon is provided through the gas inlet and insert and into a plasma region proximate the substrate. Power is then coupled to generate a plasma inside of the insert which heats the insert and causes the deposition source material to vaporize. The deposition source material vapor is mixed with a plasma polymerizable material in the plasma region proximate the substrate causing a plasma enhanced chemical vapor deposition (PECVD) thin film such as silicon oxide including the deposition source material (e.g. lithium) to be deposited on the substrate.

    摘要翻译： 用于在基板上形成膜的装置包括气体入口和附接到气体入口的插入件，该插入件包括诸如锂的沉积源材料。 为了在基板上形成膜，将基板安装在真空室中。 在将真空室泵送到低于大气压之后，通过气体入口提供诸如氩的第一处理气体并将其插入并接近基板的等离子体区域。 然后将功率耦合以在插入件内部产生等离子体，该等离子体加热插入件并使沉积源材料蒸发。 沉积源材料蒸气与靠近衬底的等离子体区域中的等离子体可聚合材料混合，引起等离子体增强的化学气相沉积（PECVD）薄膜，例如包含沉积源材料（例如锂）的氧化硅沉积在衬底上 。

    Multiple source deposition plasma apparatus
    27.
    发明授权
    Multiple source deposition plasma apparatus 失效
    多源沉积等离子体装置

    公开(公告)号：US6015595A

    公开(公告)日：2000-01-18

    申请号：US86715

    申请日：1998-05-28

    申请人： John T. Felts

    发明人： John T. Felts

    IPC分类号： B05D7/24 ,  C23C16/40 ,  C23C16/448 ,  C23C16/507 ,  H01M4/02 ,  H01M4/04 ,  H01M4/13 ,  B05D1/02

    CPC分类号： B05D1/62 ,  C23C16/401 ,  C23C16/448 ,  C23C16/507 ,  H01M4/0421 ,  H01M4/13

    摘要： An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber. After the vacuum chamber is pumped clown to a subatmospheric pressure, a first process gas such as argon is provided through the gas inlet and insert and into a plasma region proximate the substrate. Power is then coupled to generate a plasma inside of the insert which heats the insert and causes the deposition source material to vaporize. The deposition source material vapor is mixed with a plasma polymerizable material in the plasma region proximate the substrate causing a plasma enhanced chemical vapor deposition (PECVD) thin film such as silicon oxide including the deposition source material (e.g. lithium) to be deposited on the substrate.

    摘要翻译： 用于在基板上形成膜的装置包括气体入口和附接到气体入口的插入件，该插入件包括诸如锂的沉积源材料。 为了在基板上形成膜，将基板安装在真空室中。 在真空室被抽送到低于大气压的压力之后，通过气体入口提供诸如氩气的第一处理气体并将其插入到靠近衬底的等离子体区域中。 然后将功率耦合以在插入件内部产生等离子体，该等离子体加热插入件并使沉积源材料蒸发。 沉积源材料蒸气与靠近衬底的等离子体区域中的等离子体可聚合材料混合，引起等离子体增强的化学气相沉积（PECVD）薄膜，例如包含沉积源材料（例如锂）的氧化硅沉积在衬底上 。