Detecting Defects on a Wafer Using Defect-Specific Information
    21.
    发明申请
    Detecting Defects on a Wafer Using Defect-Specific Information 有权
    使用缺陷信息检测晶片上的缺陷

    公开(公告)号:US20140105482A1

    公开(公告)日:2014-04-17

    申请号:US13652377

    申请日:2012-10-15

    Abstract: Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.

    Abstract translation: 提供了使用缺陷特定信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括在晶片上形成的感兴趣图案,以及在感兴趣的图案附近或其中出现的已知DOI。 信息包括晶片上的目标图像。 该方法还包括在晶片或另一晶片上搜索目标候选。 目标候选人包括兴趣模式。 将目标候选位置和目标候选位置提供给缺陷检测。 此外,该方法包括通过识别目标候选图像中的潜在DOI位置并将一个或多个检测参数应用于潜在DOI位置的图像来检测目标候选中的已知DOI。

    HIGH ACCURACY OF RELATIVE DEFECT LOCATIONS FOR REPEATER ANALYSIS

    公开(公告)号:US20200072763A1

    公开(公告)日:2020-03-05

    申请号:US16613787

    申请日:2018-05-14

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

    System and method for aligning semiconductor device reference images and test images

    公开(公告)号:US10572991B2

    公开(公告)日:2020-02-25

    申请号:US15837582

    申请日:2017-12-11

    Abstract: A method may include, but is not limited to, receiving a plurality of reference images of a wafer. The method may include, but is not limited to, receiving the plurality of test images of the wafer. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a coarse alignment process. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a fine alignment process after alignment via the coarse alignment process. The fine alignment process may include measuring individual offsets and correcting individual offset data between at least one of the plurality of reference images and the plurality of test images.

    HIGH ACCURACY OF RELATIVE DEFECT LOCATIONS FOR REPEATER ANALYSIS

    公开(公告)号:US20180328860A1

    公开(公告)日:2018-11-15

    申请号:US15939278

    申请日:2018-03-29

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

    Adaptive local threshold and color filtering

    公开(公告)号:US09704234B2

    公开(公告)日:2017-07-11

    申请号:US14450170

    申请日:2014-08-01

    Abstract: Methods and systems for detecting defects on a wafer using adaptive local thresholding and color filtering are provided. One method includes determining local statistics of pixels in output for a wafer generated using an inspection system, determining which of the pixels are outliers based on the local statistics, and comparing the outliers to the pixels surrounding the outliers to identify the outliers that do not belong to a cluster of outliers as defect candidates. The method also includes determining a value for a difference in color between the pixels of the defect candidates and the pixels surrounding the defect candidates. The method further includes identifying the defect candidates that have a value for the difference in color greater than or equal to a predetermined value as nuisance defects and the defect candidates that have a value for the difference in color less than the predetermined value as real defects.

    Defect Detection Using Structural Information
    29.
    发明申请
    Defect Detection Using Structural Information 有权
    使用结构信息的缺陷检测

    公开(公告)号:US20160104600A1

    公开(公告)日:2016-04-14

    申请号:US14880187

    申请日:2015-10-09

    Abstract: Systems and methods for detecting defects on a specimen based on structural information are provided. One system includes one or more computer subsystems configured for separating the output generated by a detector of an inspection subsystem in an array area on a specimen into at least first and second segments of the output based on characteristic(s) of structure(s) in the array area such that the output in different segments has been generated in different locations in the array area in which the structure(s) having different values of the characteristic(s) are formed. The computer subsystem(s) are also configured for detecting defects on the specimen by applying one or more defect detection methods to the output based on whether the output is in the first segment or the second segment.

    Abstract translation: 提供了基于结构信息检测样本上的缺陷的系统和方法。 一个系统包括一个或多个计算机子系统,其被配置为基于检测子系统的检测器产生的输出,以将样本上的阵列区域中的输出的至少第一和第二段基于 阵列区域使得不同段中的输出已经在其中形成具有不同特征值的结构的阵列区域中的不同位置中生成。 计算机子系统还被配置为基于输出是在第一段还是第二段中,通过向输出应用一个或多个缺陷检测方法来检测样本上的缺陷。

    Detecting defects on a wafer using defect-specific information
    30.
    发明授权
    Detecting defects on a wafer using defect-specific information 有权
    使用缺陷特定信息检测晶片上的缺陷

    公开(公告)号:US09189844B2

    公开(公告)日:2015-11-17

    申请号:US13652377

    申请日:2012-10-15

    Abstract: Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.

    Abstract translation: 提供了使用缺陷特定信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括在晶片上形成的感兴趣图案,以及在感兴趣的图案附近或其中出现的已知DOI。 信息包括晶片上的目标图像。 该方法还包括在晶片或另一晶片上搜索目标候选。 目标候选人包括兴趣模式。 将目标候选位置和目标候选位置提供给缺陷检测。 此外,该方法包括通过识别目标候选图像中的潜在DOI位置并将一个或多个检测参数应用于潜在DOI位置的图像来检测目标候选中的已知DOI。

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